Design of Fiber-coupled Surface-normal Fabry Perot Electroabsorption Modulators for Analog Applications PDF Download
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Author: Justin Hannah Hodiak
Publisher:
ISBN:
Category :
Languages : en
Pages : 688
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Author: Justin Hannah Hodiak
Publisher:
ISBN:
Category :
Languages : en
Pages : 688
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Author: Ran-Hong Yan
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ISBN:
Category :
Languages : en
Pages : 2
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In the search for practical optical modulators for optical switching, communications, and interconnections, various device parameters need to be optimized, and the optimization should depend on the applications. For large array applications, surface-normal modulators are preferred. Because of the enhanced optoelectronic interaction length available in resonators without actually increasing the active region thickness, and the cavity balance provided by the resonance, devices with Fabry-Perot structures have both low operating voltage and high-contrast advantages.
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Category : Dissertation abstracts
Languages : en
Pages : 784
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Author: Paraskevi Zouganeli
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Category :
Languages : en
Pages : 0
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Author:
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ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 898
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Author: Xiaobo Xie
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ISBN:
Category :
Languages : en
Pages : 150
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Semiconductor electroabsorption modulator (EAM) has found its way in fiber-optic communications thanks to its small size, good modulation efficiency, and promising integration with other semiconductor optoelectronic devices. High power handling capability and low insertion loss are desirable for EAM to achieve high link gain, low noise figure (NF), and high spurious-free dynamic range (SFDR) in analog fiber-optic link applications. By applying peripheral coupled waveguide (PCW) structure to EAM, the optical mode is buried down below the absorption layer with small confinement factor [Gamma], leaving only an evanescent tail for modulation. Consequently, the coupling between the EAM waveguide and fiber along with the waveguide propagation loss is improved, resulting in a reduced fiber-to-fiber insertion loss that is comparable to low loss LiNbO3 Mach-Zehnder modulators (MZMs). A record low loss of 4 dB was demonstrated by a PCW EAM. Besides, small [Gamma] results in low absorption and low photocurrent densities, which enables EAM to survive high optical power and delays the onset of saturation. Devices withstanding 590 mW input optical power and generating 222 mA photocurrent were made and measured. Link gain of within -10 dB was commonly achieved with PCW. PCW with tapered waveguide structure was also investigated to further increase EAM power handling capability. At high optical power, multiple physical mechanisms kick in to play roles in the performance of EAM, among which are carrier screening, band-gap shrinkage due to temperature increase, material index of refraction change due to large photocurrent, and most prominently the junction resistance reduction as a feedback effect on the input microwave signal. An analysis based on EAM equivalent circuit model was presented for the photocurrent feedback effect with experimental support, yielding a gain limit for EAM at high power. The analysis also led to an alternative conjecture of using blue-shift QCSE material with negative differential resistance to overcome the EAM gain limit. In addition, the linearity of the EAM at high power was theoretically investigated, showing improvement with the presence of photocurrent feedback. An SFDR of 135 dB/Hz2/3 was estimated to be obtainable at 700 mW input optical power.
Author:
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ISBN:
Category :
Languages : en
Pages : 23
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There were two main technical objectives of this program with respect to the investigation of the high speed waveguide electroabsorption (EA) modulator, namely: (1) Design and fabrication of a waveguide modulator with a widened optical waveguide for easy packaging and lower insertion loss, and (2) interfacing with Infotonics for their fiber packaging effort of the modulator. In addition, an examination of the limits to Radio Frequency (RF) link gain, noise figure and spurious free dynamic range (SFDR) of the EA modulator was accomplished. This program produced the following accomplishments: 1) Finished a design for the modulator with large optical waveguide to improve the coupling in materials structure of either bulk InGaAsP or multiple quantum wells. The design has been fabricated at UCSD and repeated at a commercial foundry. 2) Examined the limits of RF link gain, noise figure and SFDR of EA modulators.
Author: GuoLiang Li
Publisher:
ISBN:
Category :
Languages : en
Pages : 410
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Author: G. D. Boyd
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ISBN:
Category :
Languages : en
Pages : 5
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Following the demonstration of the absorption reflection modulator 1, many workers 2-10 have used Fabry-Perot resonators to improve the limited contrast ratio of these multiple quantum well light modulators. Most experiments have been in the normally on (Non), spectral region where absorption increases with field. Using field dependent GaAs/AlGaAs quantum well absorption data, we have created a model that calculates the reflectivity and contrast ratio of resonant and non-resonant modulators in both the normally off (Noff), region where absorption decreases with field, and the normally on (Non) spectral regions for use with photonic devices such as the self-electrooptic effect device (SEEDs). ne calculations include both electro-absorption and electro-refraction effects.
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Category : Aeronautics
Languages : en
Pages : 898
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