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Author: Dhrubes Biswas
Publisher:
ISBN:
Category :
Languages : en
Pages : 98
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Book Description
Author: Dhrubes Biswas
Publisher:
ISBN:
Category :
Languages : en
Pages : 98
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Book Description
Author: Marian A. Herman
Publisher: Springer Science & Business Media
ISBN: 3642970982
Category : Technology & Engineering
Languages : en
Pages : 394
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Book Description
This first-ever monograph on molecular beam epitaxy (MBE) gives a comprehensive presentation of recent developments in MBE, as applied to crystallization of thin films and device structures of different semiconductor materials. MBE is a high-vacuum technology characterized by relatively low growth temperature, ability to cease or initiate growth abruptly, smoothing of grown surfaces and interfaces on an atomic scale, and the unique facility for in situ analysis of the structural parameters of the growing film. The excellent exploitation parameters of such MBE-produced devices as quantum-well lasers, high electron mobility transistors, and superlattice avalanche photodiodes have caused this technology to be intensively developed. The main text of the book is divided into three parts. The first presents and discusses the more important problems concerning MBE equipment. The second discusses the physico-chemical aspects of the crystallization processes of different materials (mainly semiconductors) and device structures. The third part describes the characterization methods which link the physical properties of the grown film or structures with the technological parameters of the crystallization procedure. Latest achievements in the field are emphasized, such as solid source MBE, including silicon MBE, gas source MBE, especially metalorganic MBE, phase-locked epitaxy and atomic-layer epitaxy, photoassisted molecular layer epitaxy and migration enhanced epitaxy.
Author: Morton B. Panish
Publisher: Springer Science & Business Media
ISBN: 3642781276
Category : Science
Languages : en
Pages : 441
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Book Description
The first book to present a unified treatment of hybrid source MBE and metalorganic MBE. Since metalorganic MBE permits selective area growth, the latest information on its application to the INP/GaInAs(P) system is presented. This system has been highlighted because it is one of rising importance, vital to optical communications systems, and has great potential for future ultra-highspeed electronics. The use of such analytical methods as high resolution x-ray diffraction, secondary ion mass spectroscopy, several photoluminescence methods, and the use of active devices for materials evaluation is shown in detail.
Author: Robin F.C. Farrow
Publisher: Elsevier
ISBN: 0815518404
Category : Technology & Engineering
Languages : en
Pages : 795
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Book Description
In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices.
Author: Rajat Jhanjee
Publisher:
ISBN:
Category :
Languages : en
Pages : 114
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Book Description
Author: Gary L. Robinson
Publisher:
ISBN:
Category :
Languages : en
Pages : 4
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Book Description
The objective of the research supported by the grant to grow epitaxial III-V semiconductor films using gaseous source materials for molecular beam epitaxy (MBE). The grant provides the critical equipment items needed to customize an existing commercial MBE system and allow growth of heteroepitaxial structures that can not be fabricated by other existing techniques.
Author: Brian R. Pamplin
Publisher: Elsevier
ISBN: 1483155331
Category : Science
Languages : en
Pages : 181
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Book Description
Molecular Beam Epitaxy introduces the reader to the use of molecular beam epitaxy (MBE) in the generation of III-V and IV-VI compounds and alloys and describes the semiconductor and integrated optics reasons for using the technique. Topics covered include semiconductor superlattices by MBE; design considerations for MBE systems; periodic doping structure in gallium arsenide (GaAs); nonstoichiometry and carrier concentration control in MBE of compound semiconductors; and MBE techniques for IV-VI optoelectronic devices. The use of MBE to fabricate integrated optical devices and to study semiconductor surface and crystal physics is also considered. This book is comprised of eight chapters and opens with an overview of MBE as a crystal growth technique. The discussion then turns to the deposition of semiconductor superlattices of GaAs by MBE; important factors that must be considered in the design of a MBE system such as flux uniformity, crucible volume, heat shielding, source baffling, and shutters; and control of stoichiometry deviation in MBE growth of compound semiconductors, along with the effects of such deviation on the electronic properties of the grown films. The following chapters focus on the use of MBE techniques for growth of IV-VI optoelectronic devices; for fabrication of integrated optical devices; and for the study of semiconductor surface and crystal physics. The final chapter examines a superlattice consisting of a periodic sequence of ultrathin p- and n-doped semiconductor layers, possibly with intrinsic layers in between. This monograph will be of interest to chemists, physicists, and crystallographers.
Author: Krishnamraju Ankireddy
Publisher:
ISBN:
Category : Molecular beam epitaxy
Languages : en
Pages : 120
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Book Description
The capability of precise control on the doping and composition profile, uniformity of the film and stoichiometry are key factors of molecular beam epitaxy (MBE) to become a versatile thin film deposition technique in the semiconductor technology. In order to bring the MBE system into working condition, several components such as effusion cells, shutters, a beam flux monitor, an isolation gate valve, a load lock, and a contact metal strip for the substrate resistive heating were designed and installed. In the MBE technique, ultra high vacuum (UHV) is a necessary requirement for thin film growth and some in situ characterizations. To achieve UHV, new vacuum pumps were installed, and proper baking procedures were followed. Residual gas analyzer (RGA) data were used to analyze the residual gases inside the system and for leak detection. Testing of the radio frequency (RF) plasma source, testing of MBE sources, and degassing the MBE crucibles have been performed prior to thin film growth. In addition to testing, substrate temperature was manipulated by using a resistive heating method. Finally, magnesium oxide (MgO) thin films on silicon carbide (SiC) substrates were grown by using reconstructed MBE system.
Author: Christopher Alan Coronado
Publisher:
ISBN:
Category :
Languages : en
Pages : 18
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Book Description
Author: Mohamed Henini
Publisher: Elsevier
ISBN: 0128121378
Category : Science
Languages : en
Pages : 790
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Book Description
Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. Condenses the fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
