Design and Fabrication of Optically Activated Silicon Carbide High-power Switching Devices PDF Download
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Languages : en
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Book Description
The overall goal of this thesis is to design and fabricate optically activated Silicon Carbide high-power switching devices. Fly-by-Light systems that use optical signals to actuate the flight control surfaces of an aircraft have been suggested as a solution to the ElectroMagnetic Interference (EMI) problem in avionic systems. Current fly-by-light systems are limited by the lack of optically activated high-power switching devices. Silicon Carbide is a wide-band gap semiconductor, which offers the potential to overcome both the temperature and voltage blocking limitations of Silicon, due to its high thermal conductivity, high electric breakdown field, high saturated electron drift velocity and a lower intrinsic carrier concentration. In the first part of the thesis 6H-SiC was chosen as the power device material and devices were designed, fabricated and tested. Observations made from this attempt were utilized to recommend revisions in the second attempt. In the second part, 4H-SiC was chosen due to its higher mobility along the vertical axis as compared to 6H-SiC, which makes it preferable as a material for vertical power devices. Besides, many of the electrical properties of 4H-SiC are isotropic in nature. The fabricated device would eventually be integrated into a motor drive current module supplied to the Air Force. Hence it was designed to support a 135 V drive potential and source 150 A current. The fabrication processes for the 4H-SiC devices were discussed. The devices were electrically characterized and inferences were drawn from the results. Finally after discussing both electrical testing and fabrication procedures, optimization techniques were suggested for future attempts.
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Category :
Languages : en
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Book Description
The overall goal of this thesis is to design and fabricate optically activated Silicon Carbide high-power switching devices. Fly-by-Light systems that use optical signals to actuate the flight control surfaces of an aircraft have been suggested as a solution to the ElectroMagnetic Interference (EMI) problem in avionic systems. Current fly-by-light systems are limited by the lack of optically activated high-power switching devices. Silicon Carbide is a wide-band gap semiconductor, which offers the potential to overcome both the temperature and voltage blocking limitations of Silicon, due to its high thermal conductivity, high electric breakdown field, high saturated electron drift velocity and a lower intrinsic carrier concentration. In the first part of the thesis 6H-SiC was chosen as the power device material and devices were designed, fabricated and tested. Observations made from this attempt were utilized to recommend revisions in the second attempt. In the second part, 4H-SiC was chosen due to its higher mobility along the vertical axis as compared to 6H-SiC, which makes it preferable as a material for vertical power devices. Besides, many of the electrical properties of 4H-SiC are isotropic in nature. The fabricated device would eventually be integrated into a motor drive current module supplied to the Air Force. Hence it was designed to support a 135 V drive potential and source 150 A current. The fabrication processes for the 4H-SiC devices were discussed. The devices were electrically characterized and inferences were drawn from the results. Finally after discussing both electrical testing and fabrication procedures, optimization techniques were suggested for future attempts.
Author: Konstantinos Zekentes
Publisher: Materials Research Forum LLC
ISBN: 1945291850
Category : Technology & Engineering
Languages : en
Pages : 249
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Book Description
The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to SiC, their protection and compatibility with device processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC materials; technology and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; applications of SiC Schottky diodes in power electronics and temperature/light sensors; high power SiC unipolar and bipolar switching devices; different types of SiC devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of SiC power devices.
Author: Tsunenobu Kimoto
Publisher: John Wiley & Sons
ISBN: 1118313526
Category : Technology & Engineering
Languages : en
Pages : 565
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Book Description
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Author: Stephen E. Saddow
Publisher: Elsevier
ISBN: 0123859077
Category : Technology & Engineering
Languages : en
Pages : 496
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Book Description
Silicon Carbide (SiC) is a wide-band-gap semiconductor biocompatible material that has the potential to advance advanced biomedical applications. SiC devices offer higher power densities and lower energy losses, enabling lighter, more compact and higher efficiency products for biocompatible and long-term in vivo applications ranging from heart stent coatings and bone implant scaffolds to neurological implants and sensors. The main problem facing the medical community today is the lack of biocompatible materials that are also capable of electronic operation. Such devices are currently implemented using silicon technology, which either has to be hermetically sealed so it cannot interact with the body or the material is only stable in vivo for short periods of time. For long term use (permanent implanted devices such as glucose sensors, brain-machine-interface devices, smart bone and organ implants) a more robust material that the body does not recognize and reject as a foreign (i.e., not organic) material is needed. Silicon Carbide has been proven to be just such a material and will open up a whole new host of fields by allowing the development of advanced biomedical devices never before possible for long-term use in vivo. This book not only provides the materials and biomedical engineering communities with a seminal reference book on SiC that they can use to further develop the technology, it also provides a technology resource for medical doctors and practitioners who are hungry to identify and implement advanced engineering solutions to their everyday medical problems that currently lack long term, cost effective solutions. - Discusses Silicon Carbide biomedical materials and technology in terms of their properties, processing, characterization, and application, in one book, from leading professionals and scientists - Critical assesses existing literature, patents and FDA approvals for clinical trials, enabling the rapid assimilation of important data from the current disparate sources and promoting the transition from technology research and development to clinical trials - Explores long-term use and applications in vivo in devices and applications with advanced sensing and semiconducting properties, pointing to new product devekipment particularly within brain trauma, bone implants, sub-cutaneous sensors and advanced kidney dialysis devices
Author: Arye Rosen
Publisher: Artech House Publishers
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 400
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Book Description
This reference provides in-depth treatment of silicon and GaAs, linear and nonlinear, high-gain photoconductive semiconductor switching -- plus important information on multimegavolt and multimega-amp pulsed power systems.
Author: Lei Lin
Publisher:
ISBN:
Category : Electronics
Languages : en
Pages : 106
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Book Description
Author: B Jayant Baliga
Publisher: World Scientific
ISBN: 9814478946
Category : Technology & Engineering
Languages : en
Pages : 526
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Book Description
Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices.
Author: David Michael Cooperstock
Publisher:
ISBN:
Category : Semiconductor switches
Languages : en
Pages : 160
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Book Description
Research in the field of optically triggered semiconductor switches has investigated various materials for high power applications. Gallium Arsenide (GaAs) and Silicon Carbide (SiC) are two of the materials investigated. SiC has arrived on the optical switch scene and has quickly surpassed GaAs with its improved electric field hold off, current conduction, and physical strength. The start of the project involved research into semiconductor geometries for electric field hold-off for GaAs as well as a test bed design and construction for testing GaAs and SiC with DC and pulsed power. Two test beds were designed to meet the requirements demanded for testing of these switches. One test bed was designed for the DC testing of smaller wafers. The second test bed was designed for pulsed power application where higher voltage and current would occur. A custom screen room was constructed to help shield sensitive equipment from electromagnet noise. Along with the test beds, the laser system with the appropriate trigger timing circuitry was setup. Preliminary results of testing the switches as well as optical absorption data for the SiC are included in the paper. This project, from design to testing is addressed in this paper.
Author:
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ISBN:
Category : Aeronautics
Languages : en
Pages : 704
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Book Description
Author: Konstantinos Zekentes
Publisher: Materials Research Forum LLC
ISBN: 164490067X
Category : Technology & Engineering
Languages : en
Pages : 292
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Book Description
The book presents an in-depth review and analysis of Silicon Carbide device processing. The main topics are: (1) Silicon Carbide Discovery, Properties and Technology, (2) Processing and Application of Dielectrics in Silicon Carbide Devices, (3) Doping by Ion Implantation, (4) Plasma Etching and (5) Fabrication of Silicon Carbide Nanostructures and Related Devices. The book is also suited as supplementary textbook for graduate courses. Keywords: Silicon Carbide, SiC, Technology, Processing, Semiconductor Devices, Material Properties, Polytypism, Thermal Oxidation, Post Oxidation Annealing, Surface Passivation, Dielectric Deposition, Field Effect Mobility, Ion Implantation, Post Implantation Annealing, Channeling, Surface Roughness, Dry Etching, Plasma Etching, Ion Etching, Sputtering, Chemical Etching, Plasma Chemistry, Micromasking, Microtrenching, Nanocrystal, Nanowire, Nanotube, Nanopillar, Nanoelectromechanical Systems (NEMS).
