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Author: Robert Jaffee
Publisher: Springer Science & Business Media
ISBN: 1461587239
Category : Technology & Engineering
Languages : en
Pages : 598
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Book Description
DEFECTS AND TRANSPORT IN OXIDES is the proceedings of the eighth Battelle Colloquium in the Materials Sciences, held in Columbus and Salt Fork, Ohio, September 17-22, 1973. It took as its theme the relationship between defects and transport of both mass and charge in oxides. Applications of defect-controlled transport to a number of important processes in oxides also were covered. In selecting this topic, the Organizing Committee thought that 1973 was timely to bring together the leading theoretical and experimental researchers in the oxide transport field to review its status in a critical way, and to consider current major research directions and how research in the future might be guided into fruitful areas. The meeting was highlighted by the presentation of several papers which suggest that major advances in our understanding of transport in oxides appear to be imminent. These papers dealt with the results of new theoretical approaches whereby the energies and configurations of defects may be calculated, and with new experimental techniques for indirectly observing these defects, previously thought to be below the limits of experimental resolving power. Other papers, dealing with the application of defect chemistry to technological processes, served to demonstrate the successes and to point out yet unresolved problems associated with ix x PREFACE understanding the chemistry of imperfect crystals.
Author: Robert Jaffee
Publisher: Springer Science & Business Media
ISBN: 1461587239
Category : Technology & Engineering
Languages : en
Pages : 598
Get Book Here
Book Description
DEFECTS AND TRANSPORT IN OXIDES is the proceedings of the eighth Battelle Colloquium in the Materials Sciences, held in Columbus and Salt Fork, Ohio, September 17-22, 1973. It took as its theme the relationship between defects and transport of both mass and charge in oxides. Applications of defect-controlled transport to a number of important processes in oxides also were covered. In selecting this topic, the Organizing Committee thought that 1973 was timely to bring together the leading theoretical and experimental researchers in the oxide transport field to review its status in a critical way, and to consider current major research directions and how research in the future might be guided into fruitful areas. The meeting was highlighted by the presentation of several papers which suggest that major advances in our understanding of transport in oxides appear to be imminent. These papers dealt with the results of new theoretical approaches whereby the energies and configurations of defects may be calculated, and with new experimental techniques for indirectly observing these defects, previously thought to be below the limits of experimental resolving power. Other papers, dealing with the application of defect chemistry to technological processes, served to demonstrate the successes and to point out yet unresolved problems associated with ix x PREFACE understanding the chemistry of imperfect crystals.
Author: Per Kofstad
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 410
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Book Description
Author: Donald Morgan Smyth
Publisher: Oxford University Press on Demand
ISBN: 9780195110142
Category : Science
Languages : en
Pages : 294
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Book Description
The Defect Chemistry of Metal Oxides is a unique introduction to the equilibrium chemistry of solid inorganic compounds with a focus on metal oxides. Accessible to students with little or no background in defect chemistry, it explains how to apply basic principles and interpret the related behavior of materials. Topics discussed include lattice and electronic defects, doping effects, nonstoichiometry, and mass and charge transport. The text distinctly emphasizes the correlation between the general chemical properties of the constituent elements and the defect chemistry and transport properties of their compounds. It covers the types of defects formed, the effects of dopants, the amount and direction of nonstoichiometry, the depths of acceptor and donor levels, and more. Concluding chapters present up-to-date and detailed analyses of three systems: titanium dioxide, cobalt oxide and nickel oxide, and barium titanate. The Defect Chemistry of Metal Oxides is the only book of its kind that incorporates sample problems for students to solve. Suitable for a variety of courses in materials science and engineering, chemistry, and geochemistry, it also serves as a valuable reference for researchers and instructors.
Author: Per Kofstad
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 366
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Book Description
Author: Andrzej Stokłosa
Publisher: CRC Press
ISBN: 100035282X
Category : Technology & Engineering
Languages : en
Pages : 319
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Book Description
Structure and Concentration of Point Defects in Selected Spinels and Simple Oxides presents diagrams and numerical data of important properties of spinels and oxides based on experimental results published in the literature. The values of many parameters presented can be used for optimization of preparation of new systems, to predict the practical properties of these systems. Applications include electronic devices, new metallic alloys with improved corrosion resistance, new ceramic materials, and novel catalysts, particularly for oxygen evolution and reduction reactions. Organized into four comprehensive parts, the authors present the problem of the structure and concentration of ionic and electronic defects in magnetite and hausmannite, pure and doped with M3+ cations, and in spinels exhibiting magnetic properties and high electric conductance. Additional Features include: Includes 236 figures presenting equilibrium diagrams of point defects and other useful details related to stoichiometric and nonstoichiometric spinels and oxides. Details novel methods of calculation of equilibria involving point defects. Collects scattered data published in nearly 500 original articles since the 1950s on spinels and oxides in one useful volume. Building upon the data presented, this book is an indispensable reference for material scientists and engineers developing new metal or oxide-based systems can easily calculate other useful parameters and compare the properties of different materials to select the best candidates for an intended use.
Author: Edmund G. Seebauer
Publisher: Springer Science & Business Media
ISBN: 1848820593
Category : Science
Languages : en
Pages : 304
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Book Description
Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. “Charged Defects in Semiconductors” details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.
Author: Vijay Kumar
Publisher: Elsevier
ISBN: 0323903592
Category : Technology & Engineering
Languages : en
Pages : 758
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Book Description
Metal Oxide Defects: Fundamentals, Design, Development and Applications provides a broad perspective on the development of advanced experimental techniques to study defects and their chemical activity and catalytic reactivity in various metal oxides. This book highlights advances in characterization and analytical techniques to achieve better understanding of a wide range of defects, most importantly, state-of-the-art methodologies for controlling defects. The book provides readers with pathways to apply basic principles and interpret the behavior of metal oxides. After reviewing characterization and analytical techniques, the book focuses on the relationship of defects to the properties and performance of metal oxides. Finally, there is a review of the methods to control defects and the applications of defect engineering for the design of metal oxides for applications in optoelectronics, energy, sensing, and more. This book is a key reference for materials scientists and engineers, chemists, and physicists. - Reviews advances in characterization and analytical techniques to understand the behavior of defects in metal oxide materials - Introduces defect engineering applied to the design of metal oxide materials with desirable properties - Discusses applications of defect engineering to enhance the performance of materials for a wide range of applications, with an emphasis on optoelectronics
Author: Asim K. Ray
Publisher: John Wiley & Sons
ISBN: 1119529476
Category : Technology & Engineering
Languages : en
Pages : 628
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Book Description
Oxide Electronics Multiple disciplines converge in this insightful exploration of complex metal oxides and their functions and properties Oxide Electronics delivers a broad and comprehensive exploration of complex metal oxides designed to meet the multidisciplinary needs of electrical and electronic engineers, physicists, and material scientists. The distinguished author eschews complex mathematics whenever possible and focuses on the physical and functional properties of metal oxides in each chapter. Each of the sixteen chapters featured within the book begins with an abstract and an introduction to the topic, clear explanations are presented with graphical illustrations and relevant equations throughout the book. Numerous supporting references are included, and each chapter is self-contained, making them perfect for use both as a reference and as study material. Readers will learn how and why the field of oxide electronics is a key area of research and exploitation in materials science, electrical engineering, and semiconductor physics. The book encompasses every application area where the functional and electronic properties of various genres of oxides are exploited. Readers will also learn from topics like: Thorough discussions of High-k gate oxide for silicon heterostructure MOSFET devices and semiconductor-dielectric interfaces An exploration of printable high-mobility transparent amorphous oxide semiconductors Treatments of graphene oxide electronics, magnetic oxides, ferroelectric oxides, and materials for spin electronics Examinations of the calcium aluminate binary compound, perovoksites for photovoltaics, and oxide 2Degs Analyses of various applications for oxide electronics, including data storage, microprocessors, biomedical devices, LCDs, photovoltaic cells, TFTs, and sensors Suitable for researchers in semiconductor technology or working in materials science, electrical engineering, and physics, Oxide Electronics will also earn a place in the libraries of private industry researchers like device engineers working on electronic applications of oxide electronics. Engineers working on photovoltaics, sensors, or consumer electronics will also benefit from this book.
Author: Richard J. D. Tilley
Publisher: John Wiley & Sons
ISBN: 047038073X
Category : Science
Languages : en
Pages : 549
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Book Description
Provides a thorough understanding of the chemistry and physics of defects, enabling the reader to manipulate them in the engineering of materials. Reinforces theoretical concepts by placing emphasis on real world processes and applications. Includes two kinds of end-of-chapter problems: multiple choice (to test knowledge of terms and principles) and more extensive exercises and calculations (to build skills and understanding). Supplementary material on crystallography and band structure are included in separate appendices.
Author:
Publisher: Elsevier
ISBN: 0080538312
Category : Science
Languages : en
Pages : 677
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Book Description
The book is a multi-author survey (in 15 chapters) of the current state of knowledge and recent developments in our understanding of oxide surfaces. The author list includes most of the acknowledged world experts in this field. The material covered includes fundamental theory and experimental studies of the geometrical, vibrational and electronic structure of such surfaces, but with a special emphasis on the chemical properties and associated reactivity. The main focus is on metal oxides but coverage extends from 'simple' rocksalt materials such as MgO through to complex transition metal oxides with different valencies.
