Crystallization and Interfacial Reaction of Amorphous Silicon and Metal Thin Films by Pulsed Excimer Laser Annealing PDF Download
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Author: Connie Lew
Publisher:
ISBN:
Category :
Languages : en
Pages : 180
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Author: Connie Lew
Publisher:
ISBN:
Category :
Languages : en
Pages : 180
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Book Description
Author: Zumin Wang
Publisher: CRC Press
ISBN: 9814463418
Category : Science
Languages : en
Pages : 317
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Book Description
Crystalline semiconductors in the form of thin films are crucial materials for many modern, advanced technologies in fields such as microelectronics, optoelectronics, display technology, and photovoltaic technology. Crystalline semiconductors can be produced at surprisingly low temperatures (as low as 120C) by crystallization of amorphous semicon
Author: Cherie R. Kagan
Publisher: CRC Press
ISBN: 0824747542
Category : Technology & Engineering
Languages : en
Pages : 486
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Book Description
A single-source treatment of developments in TFT production from international specialists. It interweaves overlapping areas in multiple disciplines pertinent to transistor fabrication and explores the killer application of amorphous silicon transistors in active matrix liquid crystal displays.
Author: John Viatella
Publisher:
ISBN:
Category :
Languages : en
Pages : 346
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Author: Taekon Kim
Publisher:
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Category :
Languages : en
Pages :
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ABSTRACT: Crystallization of amorphous Si (a-Si) thin film has received extensive interest for their attractive applications into Si thin film transistors and Si based solar cells. Among various crystallization techniques, Solid phase crystallization (SPC) and Excimer laser crystallization (ELC) were investigated. Firstly, Solid phase crystallization (SPC) of amorphous silicon thin films deposited by the DC magnetron sputtering system with a modification in nucleation step was investigated at low temperature. The thin film consists of polycrystalline nanoparticles embedded in an amorphous matrix which can act as nuclei during crystallization, resulting in a lower thermal energy for the nucleation. The lowering energy barrier for nucleation would shorten the transition time from amorphous into polycrystalline silicon resulting from the reduction of incubation time and also lower the processing temperature spontaneously. In addition, a comprehensive study of the growth mechanism of the sputtered amorphous silicon thin films is presented during annealing. Samples were prepared with various substrate temperatures and RF power in order to optimize the crystallization of a-Si after the deposition. Also, the effects of annealing condition were examined. Low pressure N2 ambient during SPC promoted crystallization of a-Si thin films and the crystallinity. The low pressure annealing had a large impact on the crystallinity and growth behavior of subsequent films.
Author:
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Category : Electrical engineering
Languages : en
Pages : 2304
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Author:
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Category : Engineering
Languages : en
Pages : 300
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Category : Power resources
Languages : en
Pages : 752
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Author: E.I. Givargizov
Publisher: Springer Science & Business Media
ISBN: 1489925600
Category : Technology & Engineering
Languages : en
Pages : 377
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Book Description
Present-day scienceand technology have become increasingly based on studies and applications of thin films. This is especiallytrue of solid-state physics, semiconduc tor electronics, integrated optics, computer science, and the like. In these fields, it is necessary to use filmswith an ordered structure, especiallysingle-crystallinefilms, because physical phenomena and effects in such films are most reproducible. Also, active parts of semiconductor and other devices and circuits are created, as a rule, in single-crystal bodies. To date, single-crystallinefilms have been mainly epitaxial (or heteroepitaxial); i.e., they have been grown on a single-crystalline substrate, and principal trends, e.g., in the evolution of integrated circuits (lCs), have been based on continuing reduction in feature size and increase in the number of components per chip. However, as the size decreases into the submicrometer range, technological and physical limitations in integrated electronics become more and more severe. It is generally believed that a feature size of about 0.1um will have a crucial character. In other words, the present two-dimensional ICs are anticipated to reach their limit of minimization in the near future, and it is realized that further increase of packing density and/or functions might depend on three-dimensional integration. To solve the problem, techniques for preparation of single-crystalline films on arbitrary (including amorphous) substrates are essential.
Author: Rajiv K. Singh
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 704
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Book Description
Laser processing has been used in a wide variety of applications and materials such as semiconductors, superconductors, ceramics, polymers and metals. Lasers provide a controlled source of atomic and electronic excitations involving nonequilibrium phenomena that lend themselves to processing of novel materials and structures. The range of laser-solid interactions involving electronic excitation, melting and evaporation result in the formation of novel phases, selective gas excitations, surface modification and low-temperature thin-film deposition. This book from MRS focuses on the use of lasers in both the fundamental understanding and applied aspects of laser-solid and laser-gas interactions relevant to materials processing. Applications featured include thin-film transistors formed by laser-induced crystallization of amorphous silicon, diamond coatings and micromachining. Topics include: fundamentals of laser-solid interactions; fundamentals of pulsed laser ablation; pulsed laser deposition; novel applications of laser processing; laser-driven formation of nanocrystals; laser annealing; surface modification and etching; and laser-assisted chemical vapor deposition.
