Crystal Growth And Characterization Of Advanced Materials - Proceedings Of The International School On Crystal Growth And Characterization Of Advanced Matherials PDF Download
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Author: A N Christensen
Publisher: World Scientific
ISBN: 9814611123
Category : Technology & Engineering
Languages : en
Pages : 556
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Book Description
Contents:Fundamental Aspects of Crystal Growth from the Melt (C Paorici & L Zanotti)Phase Diagrams in Crystal Growth (A N Christensen)Growth Procedures and Perfection of Semiconductor Materials (A Lindegaard-Andersen)Atomistic Aspects of Crystal Growth and Epitaxy (I Markov)Fundamentals of Liquid Phase Epitaxial Growth (P Kordos)Determination of Few Selected Basic Parameters of the Investigation of AIII-BV Semiconductors Using X-Ray Methods (H Bruhl)Multijunction Solar Cells (I Chambouleyron)Application of the Mossbauer Spectroscopy to the Study of Magnetic Materials (G Albanese)Metallic Magnetism in Modern Materials (D Givord)and others Readership: Materials scientists.
Author: A N Christensen
Publisher: World Scientific
ISBN: 9814611123
Category : Technology & Engineering
Languages : en
Pages : 556
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Book Description
Contents:Fundamental Aspects of Crystal Growth from the Melt (C Paorici & L Zanotti)Phase Diagrams in Crystal Growth (A N Christensen)Growth Procedures and Perfection of Semiconductor Materials (A Lindegaard-Andersen)Atomistic Aspects of Crystal Growth and Epitaxy (I Markov)Fundamentals of Liquid Phase Epitaxial Growth (P Kordos)Determination of Few Selected Basic Parameters of the Investigation of AIII-BV Semiconductors Using X-Ray Methods (H Bruhl)Multijunction Solar Cells (I Chambouleyron)Application of the Mossbauer Spectroscopy to the Study of Magnetic Materials (G Albanese)Metallic Magnetism in Modern Materials (D Givord)and others Readership: Materials scientists.
Author: Angelo Baracca
Publisher: Springer Science & Business
ISBN: 9401780412
Category : Science
Languages : en
Pages : 453
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Book Description
This book brings together a broad spectrum of authors, both from inside and from outside Cuba, who describe the development of Cuba's scientific system from the colonial period to the present. It is a unique documentation of the self-organizing power of a local scientific community engaged in scientific research on an international level. The first part includes several contributions that reconstruct the different stages of the history of physics in Cuba, from its beginnings in the late colonial era to the present. The second part comprises testimonies of Cuban physicists, who offer lively insights from the perspective of the actors themselves. The third part presents a series of testimonies by foreign physicists, some of whom were directly involved in developing Cuban physics, in particular in the development of teaching and research activities in the early years of the Escuela de Física. The fourth part of the volume deals with some of the issues surrounding the publishing of scientific research in Cuba. Cuba’s recent history and current situation are very controversial issues. Little is known about the development and status of higher education and scientific research on the island. However, Cuba has one of the highest proportions in the world of people with a university degree or doctorate and is known for its highly developed medical system. This book focuses on a comprehensive overview of the history of the development of one specific scientific discipline: physics in Cuba. It traces the evolution of an advanced research system in a developing country and shows a striking capacity to link the development of modern research with the concrete needs of the country and its population. A little known aspect is the active participation of several “western” physicists and technicians during the 1960s, the role of summer schools, organized by French, Italian, and other western physicists, as well as the active collaboration with European universities.
Author: Hock Lim
Publisher: World Scientific
ISBN: 9814474525
Category : Technology & Engineering
Languages : en
Pages : 238
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Book Description
The contributions to this volume deliberate the electrical and magnetic properties of materials relevant to the design of unconventional antennas, microwave circuits/components, anti-reflection media and coatings, EMI shielding structures, radomes, etc. Though a classical research topic, some recent advancements in technology have led to new capabilities to create and control fine-scale structures. This has inspired scientists to develop new materials with exceptionally high permittivity or permeability, as well as metamaterials (or negative index materials) with unusual electromagnetic properties. Novel materials based on the use of active devices to control their electromagnetic performance have also been proposed. The multi-disciplinary nature of these new materials has brought together researchers from materials science, physics and electrical engineering to explore and deepen our current understanding of electromagnetic wave propagation. A wide range of new commercial/defence applications of these materials is expected to emerge in the near future.
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ISBN:
Category : Malaysian literature (English)
Languages : en
Pages : 600
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Book Description
Author: British Library. Document Supply Centre
Publisher:
ISBN:
Category : Congresses and conventions
Languages : en
Pages : 988
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Book Description
Author: Antonio Cricenti
Publisher: World Scientific
ISBN: 9814417130
Category : Science
Languages : en
Pages : 140
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Book Description
The book is aimed at assessing the capabilities of state-of-the-art optical techniques in elucidating the fundamental electronic and structural properties of semiconductor and metal surfaces, interfaces, thin layers, and layer structures, and assessing the usefulness of these techniques for optimization of high quality multilayer samples through feedback control during materials growth and processing. Particular emphasis is dedicated to the theory of nonlinear optics and to dynamical processes through the use of pump-probe techniques together with the search for new optical sources. Some new applications of Scanning Probe Microscopy to Material Science and biological samples, dried and in vivo, with the use of different laser sources are also presented. Materials of particular interest are silicon, semiconductor-metal interfaces, semiconductor and magnetic multi-layers and III-V compound semiconductors.
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Category : English imprints
Languages : en
Pages : 1140
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Book Description
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Category : Aeronautics
Languages : en
Pages : 842
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Book Description
Author:
Publisher: Elsevier
ISBN: 0323958192
Category : Technology & Engineering
Languages : en
Pages : 2153
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Book Description
Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Second Edition, Three Volume Set captures the breadth of this important field and presents it in a single source to the large audience who study, make, and use semiconductor devices. Written and edited by a truly international team of experts and newly updated to capture key advancements in the field, this work delivers an objective yet cohesive review of the semiconductor world.The work is divided into three sections, fully updated and expanded from the first edition. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics, especially quantum phenomena. The second section deals largely with the transformation of the conceptual framework of solid-state physics into devices and systems, which require the growth of high-purity or doped, bulk and epitaxial materials with low defect density and well-controlled electrical and optical properties. The third section is devoted to design, fabrication and assessment of discrete and integrated semiconductor devices. It will cover the entire spectrum of devices we see all around us, for telecommunications, computing, automation, displays, illumination and consumer electronics. - Provides a comprehensive global picture of the semiconductor world - Written and Edited by an international team of experts - Compiles the most important semiconductor knowledge into one comprehensive resource - Moves from fundamentals and theory to more advanced knowledge, such as applications, allowing readers to gain a deeper understanding of the field
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Publisher: Elsevier
ISBN: 0080472540
Category : Technology & Engineering
Languages : en
Pages : 603
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Book Description
This is the first volume to appear under the joint editorship of J.P. Hirth and F.R.N. Nabarro. While Volume 11 concentrated on the single topic of dislocations and work hardening, the present volume spreads over the whole range of the study of dislocations from the application by Kléman and his colleagues of homotopy theory to classifying the line and point defects of mesomorphic phases to Chaudhri's account of the experimental observations of dislocations formed around indentations.Chapter 64, by Cai, Bulatove, Chang, Li and Yip, discusses the influence of the structure of the core of a dislocation on its mobility. The power of modern computation allows this topic to be treated from the first principles of electron theory, and with empirical potentials for more complicated problems. Advances in electron microscopy allow these theoretical predictions to be tested.In Chapter 65, Xu analyzes the emission of dislocations from the tip of a crack and its influence on the brittle to ductile transition. Again, the treatment is predominantly theoretical, but it is consistently related to the very practical example of alpha iron.In a dazzling interplay of experiment and abstract mathematics, Kléman, Lavrentovich and Nastishin analyze the line and point structural defects of the many mesomorphic phases which have become known in recent years.Chapter 67, by Coupeau, Girard and Rabier, is essentially experimental. It shows how the various modern techniques of scanning probe microscopy can be used to study dislocations and their interaction with the free surface.Chapter 68, by Mitchell and Heuer, considers the complex dislocations that can form in ceramic crystals on the basis of observations by transmission electron microscopy and presents mechanistic models for the motion of the dislocations in various temperature regimes.While the underlying aim of the study of dislocations in energetic crystals by Armstrong and Elban in Chapter 69 is to understand the role of dislocations in the process of detonation, it has the wider interest of studying dislocations in molecular crystals which are ``elastically soft, plastically hard, and brittle''.Chaudhri in Chapter 70 discusses the role of dislocations in indentation processes, largely on the basis of the elastic analysis by E.H. Yoffe. The special case of nanoindentations is treated only briefly.
