Electronic Structure, Correlation Effects and Physical Properties of D- and F-metals and Their Compounds PDF Download
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Author: Valentin Yu Irkhin
Publisher: Cambridge Int Science Publishing
ISBN: 190460255X
Category : Science
Languages : en
Pages : 464
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Book Description
The book includes all main physical properties of d- and f-transition-metal systems and corresponding theoretical concepts. Special attention is paid to the theory of magnetism and transport phenomena. Some examples of non-traditional questions which are treated in detail in the book: the influence of density of states singularities on electron properties; many-electron description of strong itinerant magnetism; mechanisms of magnetic anisotropy; microscopic theory of anomalous transport phenomena in ferromagnets. Besides considering classical problems of solid state physics as applied to transition metals, modern developments in the theory of correlation effects in d- and f-compounds are considered within many-electron models. The book contains, where possible, a simple physical discussion. More difficult questions are considered in Appendices.
Author: Valentin Yu Irkhin
Publisher: Cambridge Int Science Publishing
ISBN: 190460255X
Category : Science
Languages : en
Pages : 464
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Book Description
The book includes all main physical properties of d- and f-transition-metal systems and corresponding theoretical concepts. Special attention is paid to the theory of magnetism and transport phenomena. Some examples of non-traditional questions which are treated in detail in the book: the influence of density of states singularities on electron properties; many-electron description of strong itinerant magnetism; mechanisms of magnetic anisotropy; microscopic theory of anomalous transport phenomena in ferromagnets. Besides considering classical problems of solid state physics as applied to transition metals, modern developments in the theory of correlation effects in d- and f-compounds are considered within many-electron models. The book contains, where possible, a simple physical discussion. More difficult questions are considered in Appendices.
Author: Morrel H. Cohen
Publisher:
ISBN:
Category :
Languages : en
Pages : 10
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Book Description
Research fell into five categories: (1) disordered materials, (2) electrical instabilities and switching in amorphous semiconductors; (3) theory of liquid helium, (4) continuous metal-nonmetal transitions in disordered materials: microscopic inhomogeneities, and (5) nearly one-dimensional organic conductors. (Author).
Author: Ilja Turek
Publisher: Springer Science & Business Media
ISBN: 1461562554
Category : Science
Languages : en
Pages : 327
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Book Description
At present, there is an increasing interest in the prediction of properties of classical and new materials such as substitutional alloys, their surfaces, and metallic or semiconductor multilayers. A detailed understanding based on a thus of the utmost importance for fu microscopic, parameter-free approach is ture developments in solid state physics and materials science. The interrela tion between electronic and structural properties at surfaces plays a key role for a microscopic understanding of phenomena as diverse as catalysis, corrosion, chemisorption and crystal growth. Remarkable progress has been made in the past 10-15 years in the understand ing of behavior of ideal crystals and their surfaces by relating their properties to the underlying electronic structure as determined from the first principles. Similar studies of complex systems like imperfect surfaces, interfaces, and mul tilayered structures seem to be accessible by now. Conventional band-structure methods, however, are of limited use because they require an excessive number of atoms per elementary cell, and are not able to account fully for e.g. substitu tional disorder and the true semiinfinite geometry of surfaces. Such problems can be solved more appropriately by Green function techniques and multiple scattering formalism.
Author: Ching-Ye Hsiaw
Publisher:
ISBN:
Category :
Languages : en
Pages : 350
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Book Description
Author: M Donath
Publisher: World Scientific
ISBN: 9814544663
Category : Science
Languages : en
Pages : 470
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Book Description
The interplay of magnetism and electronic correlations dominates the physical properties of many rare-earth elements and their compounds. The investigation of the mutual influence of the localized 4f electrons and itinerant band electrons represents a challenging task in theoretical as well as experimental physics. Research areas of current interest are the electronic structure as determined from calculations and spectroscopies, the magnetic properties in three- and low-dimensional systems, open questions concerning transport such as spin disorder resistivity, and the influence of structure and morphology.
Author: Rostislav A. Serota
Publisher:
ISBN:
Category :
Languages : en
Pages : 130
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Book Description
Author: Walter A. Harrison
Publisher: Courier Corporation
ISBN: 0486660214
Category : Science
Languages : en
Pages : 610
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Book Description
"Should be widely read by practicing physicists, chemists and materials scientists." — Philosophical Magazine In this comprehensive and innovative text, Professor Harrison (Stanford University) offers a basic understanding of the electronic structure of covalent and ionic solids, simple metals, transition metals, and their compounds. The book illuminates the relationships of the electronic structures of these materials and shows how to calculate dielectric, conducting, and bonding properties for each. Also described are various methods of approximating electronic structure, providing insight and even quantitative results from the comparisons. Dr. Harrison has also included an especially helpful "Solid State Table of the Elements" that provides all the parameters needed to estimate almost any property of any solid, with a hand-held calculator, using the techniques developed in the book. Designed for graduate or advanced undergraduate students who have completed an undergraduate course in quantum mechanics or atomic and modern physics, the text treats the relation between structure and properties comprehensively for all solids rather than for small classes of solids. This makes it an indispensable reference for all who make use of approximative methods for electronic-structure engineering, semiconductor development and materials science. The problems at the ends of the chapters are an important aspect of the book. They clearly show that the calculations for systems and properties of genuine and current interest are actually quite elementary. Prefaces. Problems. Tables. Appendixes. Solid State Table of the Elements. Bibliography. Author and Subject Indexes. "Will doubtless exert a lasting influence on the solid-state physics literature." — Physics Today
Author: Jozef T. Devreese
Publisher: Springer Science & Business Media
ISBN: 1475708998
Category : Science
Languages : en
Pages : 591
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Book Description
The 1984 Advanced Study Institute on "Electronic Structure, Dynamics and Quantum Structural Properties of Condensed Matter" took place at the Corsendonk Conference Center, close to the City of Antwerpen, from July 16 till 27, 1984. This NATO Advanced Study Institute was motivated by the research in my Institute, where, in 1971, a project was started on "ab-initio" phonon calculations in Silicon. I~ is my pleasure to thank several instances and people who made this ASI possible. First of all, the sponsor of the Institute, the NATO Scientific Committee. Next, the co-sponsors: Agfa-Gevaert, Bell Telephone Mfg. Co. N.V., C & A, Esso Belgium·, CDC Belgium, Janssens Pharmaceutica, Kredietbank and the Scientific Office of the U.S. Army. Special thanks are due to Dr. P. Van Camp and Drs. H. Nachtegaele, who, over several months, prepared the practical aspects of the ASI with the secretarial help of Mrs. R.-M. Vandekerkhof. I also like to. thank Mrs. M. Cuyvers who prepared and organized the subject and material index and Mrs. H. Evans for typing-assist ance. I express particular gratitude to Mrs. F. Nedee, who, like in 1981 and 1982, has put the magnificent Corsendonk Conference Center at our disposal and to Mr. D. Van Der Brempt, Director of the Corsendonk Conference Center, for the efficient way in which he and his staff took care of the practical organization at the Conference Center.
Author: Frank Y. Fradin
Publisher: Elsevier
ISBN: 1483218279
Category : Technology & Engineering
Languages : en
Pages : 461
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Book Description
Treatise on Materials Science and Technology, Volume 21: Electronic Structure and Properties covers the developments in electron theory and electron spectroscopies. The book discusses the electronic structure of perfect and defective solids; the photoelectron spectroscopy as an electronic structure probe; and the electron-phonon interaction. The text describes the elastic properties of transition metals; the electrical resistivity of metals; as well as the electronic structure of point defects in metals. Metallurgists, materials scientists, materials engineers, and students involved in the related fields will find the book useful.
Author: Natalya A. Zimbovskaya
Publisher: Springer
ISBN: 9781461480129
Category : Technology & Engineering
Languages : en
Pages : 338
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Book Description
A comprehensive overview of the physical mechanisms that control electron transport and the characteristics of metal-molecule-metal (MMM) junctions. As far as possible, methods and formalisms presented elsewhere to analyze electron transport through molecules are avoided. This title introduces basic concepts--a description of the electron transport through molecular junctions—and briefly describes relevant experimental methods. Theoretical methods commonly used to analyze the electron transport through molecules are presented. Various effects that manifest in the electron transport through MMMs, as well as the basics of density-functional theory and its applications to electronic structure calculations in molecules are presented. Nanoelectronic applications of molecular junctions and similar systems are discussed as well. Molecular electronics is a diverse and rapidly growing field. Transport Properties of Molecular Junctions presents an up-to-date survey of the field suitable for researchers and professionals.
