Containing Papers Presented at the European Materials Research Society (EMRS) 2000 Spring Meeting, Symposium C: [on] Group III Nitrides, Strasbourg, France PDF Download
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Author: European Materials Research Society. Spring Meeting. Symposium C: Group III Nitrides
Publisher:
ISBN:
Category :
Languages : en
Pages : 278
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Book Description
![Containing Papers Presented at the European Materials Research Society (EMRS) 2000 Spring Meeting, Symposium C: [on] Group III Nitrides, Strasbourg, France PDF](https://books.google.com/books/content/images/frontcover/zR8qzwEACAAJ?fife=w80-h100)
Author: European Materials Research Society. Spring Meeting. Symposium C: Group III Nitrides
Publisher:
ISBN:
Category :
Languages : en
Pages : 278
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category : Nitrides
Languages : en
Pages : 277
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Book Description
Author: European Materials Research Society
Publisher:
ISBN:
Category :
Languages : en
Pages : 277
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Author:
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ISBN:
Category :
Languages : en
Pages : 328
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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 418
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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 329
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Book Description
Author:
Publisher:
ISBN:
Category : Nitrides
Languages : en
Pages : 418
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Book Description
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 418
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Author:
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Category :
Languages : en
Pages : 0
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Author: B. K. Meyer
Publisher: Elsevier Science Limited
ISBN: 9780444205186
Category : Science
Languages : en
Pages : 329
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Book Description
Gallium Nitride and its alloys with InN and AlN, have recently emerged as important semiconductor materials with application to yellow, green, blue and ultraviolet portions of the spectrum as emitters, detectors and high temperature electronics. LEDs based on wide badgap GaN nitrides exhibit excellent longevity and brightness levels. Combined with red LEDs one can, for the first time, have full colour semiconductor displays. The 4 day symposium was presented at the combined 1997 International Conference on Applied Materials/European Materials Research Society Spring meeting (ICAM'97/E-MRS'97) held in Strasbourg (France) from 16-20 June 1997, provided a forum for active nitride researchers covering the most recent developments in all areas of nitride semiconductors. Sessions focused on the aspects of epitaxial and bulk growth of GaN and its alloys, on optical properties and structural and electrical characterisation, quantum phenomena and light-emitting devices such as LEDs and laser diodes.
