Compound Semiconductor Photonic Devices Monolithically Integrated on Silicon

Compound Semiconductor Photonic Devices Monolithically Integrated on Silicon PDF Author: Ilias Skandalos
Publisher:
ISBN:
Category :
Languages : en
Pages : 0

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Compound Semiconductor Photonic Devices Monolithically Integrated on Silicon

Compound Semiconductor Photonic Devices Monolithically Integrated on Silicon PDF Author: Ilias Skandalos
Publisher:
ISBN:
Category :
Languages : en
Pages : 0

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Book Description
This note is part of Quality testing.

Silicon Photonics for Telecommunications and Biomedicine

Silicon Photonics for Telecommunications and Biomedicine PDF Author: Sasan Fathpour
Publisher: CRC Press
ISBN: 1439806381
Category : Science
Languages : en
Pages : 436

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Book Description
Given silicon's versatile material properties, use of low-cost silicon photonics continues to move beyond light-speed data transmission through fiber-optic cables and computer chips. Its application has also evolved from the device to the integrated-system level. A timely overview of this impressive growth, Silicon Photonics for Telecommunications

Integrated Lasers on Silicon

Integrated Lasers on Silicon PDF Author: Charles Cornet
Publisher: Elsevier
ISBN: 0081010761
Category : Technology & Engineering
Languages : en
Pages : 180

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Book Description
Integrated Lasers on Silicon provides a comprehensive overview of the state-of-the-art use of lasers on silicon for photonic integration. The authors demonstrate the need for efficient laser sources on silicon, motivated by the development of on-board/on-chip optical interconnects and the different integration schemes available. The authors include detailed descriptions of Group IV-based lasers, followed by a presentation of the results obtained through the bonding approach (hybrid III-V lasers). The monolithic integration of III-V semiconductor lasers are explored, concluding with a discussion of the different kinds of cavity geometries benchmarked with respect to their potential integration on silicon in an industrial environment. Features a clear description of the advantages, drawbacks, and challenges of laser integration on silicon Serves as a staple reference in the general field of silicon photonics Focuses on the promising developments of hybrid and monolithic III-V lasers on silicon, previously unreviewed Discusses the different kinds of cavity geometries benchmarked with respect to their potential integration on silicon in an industrial environment

Silicon Photonics

Silicon Photonics PDF Author:
Publisher: Academic Press
ISBN: 0128155191
Category : Science
Languages : en
Pages : 240

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Book Description
Silicon Photonics, Volume 99 in the Semiconductors and Semimetals series, highlights new advances in the field, with this updated volume presenting interesting chapters on Transfer printing in Silicon Photonics, Epitaxial integration of antimonide-based semiconductor lasers on Si, Photonic crystal lasers and nanolasers on Si, the Evolution of monolithic quantum-dot light source for silicon photonics, III-V on Si nanocomposites, the Heterogeneous integration of III-V on Si by bonding, the Growth of III-V on Silicon compliant substrates and lasers by MOCVD, Photonic Integrated Circuits on Si, Integrated Photonics for Bio- and Environmental sensing, Membrane Lasers/Photodiodes on Si, and more. Provides the authority and expertise of leading contributors from an international board of authors Represents the latest release in the Semiconductors and Semimetals series Updated release includes the latest information on Silicon Photonics

Compound Semiconductor Materials and Devices

Compound Semiconductor Materials and Devices PDF Author: Zhaojun Liu
Publisher: Morgan & Claypool Publishers
ISBN: 1627058532
Category : Technology & Engineering
Languages : en
Pages : 75

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Book Description
Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.

Future Directions in Silicon Photonics

Future Directions in Silicon Photonics PDF Author:
Publisher: Academic Press
ISBN: 0128205180
Category : Science
Languages : en
Pages : 384

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Book Description
Future Directions in Silicon Photonics, Volume 101 in the Semiconductors and Semimetals series, highlights new advances in the field, with this updated volume presenting the latest developments as discussed by esteemed leaders in the field silicon photonics. Provides the authority and expertise of leading contributors from an international board of authors Represents the latest release in the Semiconductors and Semimetals series Includes the latest information on Silicon Photonics

Heterogeneous Integration of III-V Semiconductor Compounds on Silicon for Functional Photonic Circuits

Heterogeneous Integration of III-V Semiconductor Compounds on Silicon for Functional Photonic Circuits PDF Author: Stanley Cheung
Publisher:
ISBN: 9781321608205
Category :
Languages : en
Pages :

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Book Description
There has been extensive research in realizing large-scale integration of silicon (Si) photonics for long-haul communications, high-throughput optical interconnects, and future high performance computing (HPC). The impetus for this research lies in the fact that the silicon-on-insulator (SOI) platform is fully compatible with CMOS technology which drives mature IC technology and allows for a convergence with large-scale integrated photonics. Recent advances in key components such as high-contrast, low-loss arrayed waveguide gratings/routers (AWG/AWGR), high speed optical modulators, germanium photo-detectors, and single-wavelength hybrid silicon laser sources have all paved a path towards realizing large chip-scale optical systems with various functionalities. Recently, the energy efficiency of these photonic components in an optical link have drawn strong attention with some projections indicating by 2020, the energy consumption of most components in 100-gigabit-per-second (Gbps) systems will be between a few pico-Joules (pJ) and sub-pJ per bit. Therefore, over the past few years, there has been keen interest in heterogeneous integration of III-V compounds with silicon to realize monolithic integration of efficient hybrid devices. This dissertation pursues the systematic development of passive silicon photonics and III-V InP/InGaAsP photonics to realize III-V/Si heterogeneous integration. Heavy emphasis is placed on optimizing the design and fabrication of the silicon photonics platform for optical routing as well as the III-V platform for optical gain functionality. Along the way, novel devices are developed such as high contrast and high resolution arrayed waveguide gratings (AWG) for optical mux/demux, continuous wave (CW) laser sources, and low repetition rate mode-locked lasers for on-chip frequency combs. In the end, this work culminates in the fabrication, design, and characterization of a hybrid III-V/Si platform via hydrophilic wafer-bonding that allows for the realization of semiconductor lasers and record efficiency III-V/Si optical amplifiers on a silicon substrate. We discuss the design and demonstration of highly efficient 1.55 [mu]m hybrid III-V/Silicon semiconductor optical amplifiers (SOA). The optimized III-V wafer stack consists of Al(0.10)In(0.71)Ga(0.18)As multiple quantum wells (MQW) and Al(0.48)In(0.52)As electron stop layers to realize SOAs with high wall-plug efficiency (WPE). We present various designs and experimentally determine WPE values for 2 mW and 0.1 mW input power amplification. The 400 [mu]m long flared SOA achieved the highest WPE value of 12.1% for output power > 10mW and the 400 [mu]m long straight SOA achieved the highest WPE value of 7.3% for output power

High-Speed Photonic Devices

High-Speed Photonic Devices PDF Author: Nadir Dagli
Publisher: CRC Press
ISBN: 142001207X
Category : Science
Languages : en
Pages : 266

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Book Description
With the ongoing, worldwide installation of 40 Gbit/s fiber optic transmission systems, there is an urgency to learn more about the photonic devices supporting this technology. Focusing on the components used to generate, modulate, and receive optical signals, High-Speed Photonic Devices presents the state-of- the-art enabling technologies behind h

Photonic Integration and Photonics-Electronics Convergence on Silicon Platform

Photonic Integration and Photonics-Electronics Convergence on Silicon Platform PDF Author: Koji Yamada
Publisher: Frontiers Media SA
ISBN: 2889196933
Category : Engineering (General). Civil engineering (General)
Languages : en
Pages : 111

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Book Description
Silicon photonics technology, which has the DNA of silicon electronics technology, promises to provide a compact photonic integration platform with high integration density, mass-producibility, and excellent cost performance. This technology has been used to develop and to integrate various photonic functions on silicon substrate. Moreover, photonics-electronics convergence based on silicon substrate is now being pursued. Thanks to these features, silicon photonics will have the potential to be a superior technology used in the construction of energy-efficient cost-effective apparatuses for various applications, such as communications, information processing, and sensing. Considering the material characteristics of silicon and difficulties in microfabrication technology, however, silicon by itself is not necessarily an ideal material. For example, silicon is not suitable for light emitting devices because it is an indirect transition material. The resolution and dynamic range of silicon-based interference devices, such as wavelength filters, are significantly limited by fabrication errors in microfabrication processes. For further performance improvement, therefore, various assisting materials, such as indium-phosphide, silicon-nitride, germanium-tin, are now being imported into silicon photonics by using various heterogeneous integration technologies, such as low-temperature film deposition and wafer/die bonding. These assisting materials and heterogeneous integration technologies would also expand the application field of silicon photonics technology. Fortunately, silicon photonics technology has superior flexibility and robustness for heterogeneous integration. Moreover, along with photonic functions, silicon photonics technology has an ability of integration of electronic functions. In other words, we are on the verge of obtaining an ultimate technology that can integrate all photonic and electronic functions on a single Si chip. This e-Book aims at covering recent developments of the silicon photonic platform and novel functionalities with heterogeneous material integrations on this platform.

Compound Semiconductor Materials and Devices

Compound Semiconductor Materials and Devices PDF Author: Zhaojun Liu
Publisher: Springer Nature
ISBN: 3031020286
Category : Technology & Engineering
Languages : en
Pages : 65

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Book Description
Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.