Comparison of Neutron and Gamma Radiation Damage in Semiconductors PDF Download
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Author: M. N. Robinson
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 20
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Book Description
Author: M. N. Robinson
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 20
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Book Description
Author: Los Alamos Scientific Laboratory
Publisher:
ISBN:
Category : Radiation
Languages : en
Pages : 80
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Book Description
Author:
Publisher:
ISBN:
Category : Electronics
Languages : en
Pages : 624
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Book Description
Author: George Messenger
Publisher: Springer
ISBN:
Category : Juvenile Nonfiction
Languages : en
Pages : 984
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Book Description
Author: F. L. Vook
Publisher: Springer
ISBN:
Category : Science
Languages : en
Pages : 508
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Book Description
Author: H. L. Chambers
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 26
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Book Description
Gain degradation rates were obtained for various transistor operating conditions of current and voltage during Cobalt 60 irradiation and compared with the degradation rate for a radiation exposure in the passive state. The effects of emitter current alone, collector voltage alone, and normal transistor operating modes were studied. The results showed that increasing levels of carrier injection from the emitter caused decreasing rates of damage. For a 2N1613 type silicon transistor, the maximum reduction observed was approximately a factor of 2. This behavior is believed to be due to an alteration of the charge state of the radiation induced defect at the time the defect is formed. A lesser dependency with collector voltage was also observed. The effects of temperature in the range 105 F to 140 F, during gamma irradiation, were found to be small in comparison with the effects of active-passive current variations. Tests conducted in a neutron environment, where normal transistor operating modes were compared with the passive irradiation state, indicated very little influence upon damage rate.
Author: C. Claeys
Publisher: Springer Science & Business Media
ISBN: 9783540433934
Category : Business & Economics
Languages : en
Pages : 440
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Book Description
This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.
Author:
Publisher:
ISBN:
Category : Electronic apparatus and appliances
Languages : en
Pages : 256
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Book Description
Author: V. S. Vavilov
Publisher: Springer
ISBN:
Category : Science
Languages : en
Pages : 290
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Author: D. C. Jones
Publisher:
ISBN:
Category : Electronic apparatus and appliances
Languages : en
Pages : 122
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Book Description
