Colloque International Du CNRS Sur Les Properties and Structure of Dislocations in Semiconductors PDF Download
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Author: Centre national de la recherche scientifique (France)
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 532
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Book Description
Author: Centre national de la recherche scientifique (France)
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 532
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 0
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Book Description
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Author: S. G. Roberts
Publisher: CRC Press
ISBN:
Category : Art
Languages : en
Pages : 496
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Book Description
The Sixth International Symposium on the Structure and Properties of Dislocations in Semiconductors was held at the University of Oxford from April 5 to 8, 1989, with participants from ten countries. This volume comprises the oral and poster presentations at the symposium, with contributions from workers who are recognised international experts in the field. There are papers on all aspects of dislocations in semiconductors, ranging from fundamental structural, electronic, optical and mechanical properties to their effects on devices. The field as a whole is an area of active research, providing an underlying knowledge and understanding for device development. There have been considerable advances in recent years, and these proceedings focus on new areas of development for the future. In a field of such importance to the understanding of the behaviour of semiconductor devices, this book is a timely summary of current research and future prospects.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 499
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Book Description
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Author: Metals Society. Metal Science Committee
Publisher: Ashgate Publishing
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 388
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Book Description
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Author: S. G. Roberts
Publisher: CRC Press
ISBN: 9780854980604
Category : Dislocation in metals
Languages : en
Pages : 496
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Book Description
The Sixth International Symposium on the Structure and Properties of Dislocations in Semiconductors was held at the University of Oxford from April 5 to 8, 1989, with participants from ten countries. This volume comprises the oral and poster presentations at the symposium, with contributions from workers who are recognised international experts in the field. There are papers on all aspects of dislocations in semiconductors, ranging from fundamental structural, electronic, optical and mechanical properties to their effects on devices. The field as a whole is an area of active research, providing an underlying knowledge and understanding for device development. There have been considerable advances in recent years, and these proceedings focus on new areas of development for the future. In a field of such importance to the understanding of the behaviour of semiconductor devices, this book is a timely summary of current research and future prospects.
