Chemical Vapor Deposition and Characterization of Titanium Dioxide Thin Films PDF Download
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Author: David Christopher Gilmer
Publisher:
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Category :
Languages : en
Pages : 314
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Author: David Christopher Gilmer
Publisher:
ISBN:
Category :
Languages : en
Pages : 314
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Author: Polly Wanda Chu
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Category :
Languages : en
Pages : 434
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Thin titanium dioxide films were produced by metalorganic chemical vapor deposition on sapphire(0001) in an ultrahigh vacuum (UHV) chamber. A method was developed for producing controlled submonolayer depositions from titanium isopropoxide precursor. Film thickness ranged from 0.1 to 2.7 nm. In situ X-ray photoelectron spectroscopy (XPS) was used to determine film stoichiometry with increasing thickness. The effect of isothermal annealing on desorption was evaluated. Photoelectron peak shapes and positions from the initial monolayers were analyzed for evidence of interface reaction. Deposition from titanium isopropoxide is divided into two regimes: depositions below and above the pyrolysis temperature. This temperature was determined to be 300 deg C. Controlled submonolayers of titanium oxide were produced by cycles of dosing with titanium isopropoxide vapor below and annealing above 300 deg C. Precursor adsorption below the pyrolysis temperature was observed to saturate after 15 minutes of dosing. The quantity absorbed was shown to have an upper limit of one monolayer. The stoichiometry of thin films grown by the cycling method were determined to be TiO2. Titanium dioxide film stoichiometry was unaffected by isothermal annealing at 700 deg C. Annealing produced a decrease in film thickness. This was explained as due to desorption. Desorption ceased at approximately 2.5 to 3 monolayers, suggesting bonding of the initial monolayers of film to sapphire is stronger than to itself. Evidence of sapphire reduction at the interface by the depositions was not observed. The XPS O is peak shifted with increased film thickness. The shifts were consistent with oxygen in sapphire and titanium dioxide having different O is photoelectron peak positions. Simulations showed the total shifts for thin films ranging in thickness of 0.1 to 2.7 nm to be -0.99 to -1.23 eV. Thick films were produced for comparison.
Author: Sutham Niyomwas
Publisher:
ISBN:
Category : Thin films
Languages : en
Pages : 86
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Author: Charles John Taylor
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ISBN:
Category :
Languages : en
Pages : 314
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Author: Sung-Jun Lee
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Category : Silicon dioxide films
Languages : en
Pages : 104
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Author: Sameer Narsinha Dharmadhikari
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ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 110
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Titanium tetrachioride and ammonia were used as precursors in a Jow pressure chemical vapor deposition process to deposit titanium nitride films on silicon wafers. The process was carried out at temperatures from 450 to 850°C and the activation energy for the reaction was determined. The order of the reaction, with respect to the partial pressures of the reactant gases, was determined by carrying out the reaction at varying partial pressures of the reactant gases. The following rate equation was established for the reaction: rate = 4.35*10-5exp( -5150/T)*(PNH3)1.37(PTicl4)-0.42 The titanium nitride thin films deposited were characterized for properties like resistivity, stress, hardness, and density. The effects of varying the process parameters (temperature, flow ratio, etc.) on these film properties were studied.
Author: Meeyoung Yoon
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ISBN:
Category : Titanium dioxide
Languages : en
Pages : 322
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Author: Eugene T. Fitzgibbons
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Category : Dielectric films
Languages : en
Pages : 141
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Thin films of TiO2 are grown in a low temperature (150C) vapor deposition process by hydrolyzing tetraisopropyl titanate at the substrate. These films can be made uniform over a 1-1/4 in substrate to within 100 A and are found to be amorphous in the 'as grown' condition. Films in the amorphous state have an index of refraction of 2.0 and can be etched easily (50 A/sec) in 0.5% HF. Annealing in air at 350C converts the film to the anatase tetragonal crystalline form and at 700C to a mixture of anatase and rutile. Both forms are quite etch resistant, but the anatase can be etched by HF and warm H2SO4. At 1000C, the film is completely rutile with an index of refraction of 2.5. This form is extremely etch resistant even in 120C H2SO4 (1000 A/hour). The conversion from amorphous to rutile is accompanied by a thickness decrease of 36%. (Author).
Author:
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ISBN:
Category : Thin films
Languages : en
Pages : 49
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Author: Jeffrey E. Bisberg
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Category :
Languages : en
Pages :
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