Chemical Modification of Silicon Surfaces for Shallow Doping and Growth of Thin Films PDF Download
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Author: Abraham Vega Zendejas
Publisher:
ISBN:
Category : Atomic layer deposition
Languages : en
Pages : 186
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Book Description
Silicon remains the most important material for a host of applications including electronics, sensors, and even energy. Consequently, the modification of its surfaces and the ability to integrate other materials by thin film deposition are important. This proposal addresses two specific issues to help control these important processes. The first is the grafting of organic molecules and the subsequent use of these self-assembled monolayers to attempt to obtain shallow doping in silicon. This constitutes a novel approach that needs to be demonstrated and tested. The second is the deposition (or growth) of molybdenum nitride and molybdenum oxide films and the understanding of the mechanism behind that growth. There appears to be an urgent need in the industrial community for such films, given the versatility and the wide range of applications this compounds can provide. This work addresses the growth and characterization of these films, working closely with precursor providers to achieve this goal.
Author: Abraham Vega Zendejas
Publisher:
ISBN:
Category : Atomic layer deposition
Languages : en
Pages : 186
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Book Description
Silicon remains the most important material for a host of applications including electronics, sensors, and even energy. Consequently, the modification of its surfaces and the ability to integrate other materials by thin film deposition are important. This proposal addresses two specific issues to help control these important processes. The first is the grafting of organic molecules and the subsequent use of these self-assembled monolayers to attempt to obtain shallow doping in silicon. This constitutes a novel approach that needs to be demonstrated and tested. The second is the deposition (or growth) of molybdenum nitride and molybdenum oxide films and the understanding of the mechanism behind that growth. There appears to be an urgent need in the industrial community for such films, given the versatility and the wide range of applications this compounds can provide. This work addresses the growth and characterization of these films, working closely with precursor providers to achieve this goal.
Author: Wei Cai
Publisher:
ISBN:
Category :
Languages : en
Pages : 182
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Book Description
Author: Jing Zhao
Publisher:
ISBN: 9780355734959
Category :
Languages : en
Pages : 116
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Book Description
Silicon and metal surfaces modified with organic molecule precursors are of great importance to the semiconductor and electronics industries. However, it is always a challenge to choose the most efficient precursors for forming a monolayer with surfaces and to investigate the chemical changes on surfaces by controlling critical conditions, such as surface temperature. In order to obtain a better understanding of the reactions between organic molecules and surfaces, we combined experimental results including infrared spectroscopy (IR), temperature programmed desorption (TPD), X-ray photoelectron spectroscopy (XPS), and microscopic studies together with density functional theory (DFT) studies. For silicon surface studies, we focused on determining the reaction step that plays the key role in halide precursors sticking probabilities and the influence of temperature on the formed monolayer. For metal surface studies, we focused on the etching method to control the layer thickness of thin metal films. ☐ During the process of achieving a halide-terminated Si (100) surface in ultrahigh vacuum (UHV), we compared the sticking probabilities of ethyl-chloride and ethyl-iodide reacting with a clean Si (100) surface using TPD and DFT studies. It has been demonstrated that the weakly bound precursor states of ethyl-halide on surfaces determines the sticking probabilities during adsorption. At the same time, we applied multivariate curve resolution (MCR), a mathematical method to simplify interpreting the complex TPD spectra resulting from the low sticking probability of ethyl-chloride adsorbing on silicon surfaces. ☐ In addition to halide-terminated Si (100) surfaces, amine-terminated Si (100) surfaces are reactive and potential for further modification. We studied the adsorption of triethylenediamine (TEDA) on a clean Si (100) surface as well as the adsorbents while varying temperature. The experimental techniques including IR, TPD, XPS and angular dependent near-edge X-Ray adsorption fine structure (NEXAFS) were supplemented by DFT calculations. We concluded that the adsorption process can be controlled by temperature: a datively bonded TEDA-Si-Si complex forms on the surface at room temperature as well as at cryogenic temperature with low exposure; heating above 400 K leads to C-N dissociation and ultimately the formation of surface nitride and carbide species. ☐ A thermal dry etching process of cobalt thin films was investigated using 1, 1, 1, 5, 5, 5 -hexafluoro-2, 4-pentanedione (hfacH). The chemical species resulting from thermal treatment were studied by IR, TPD, and XPS. The topography and morphology of the surfaces were investigated by atomic force microscopy (AFM) and scanning electron microscopy (SEM). The results indicated that the etching of cobalt can occur Hhfac, but not with halogens.
Author:
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ISBN:
Category : Aeronautics
Languages : en
Pages : 702
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Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 2304
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Author: Hitoshi Habuka
Publisher: LAP Lambert Academic Publishing
ISBN: 9783659583001
Category :
Languages : en
Pages : 504
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Book Description
Silicon is an excellent material for microelectronics, power electronics and solar cells. For these applications, silicon films and surfaces are convenient. But, its production needs significantly high level process technology and engineering. This book provides the scientific approaches to the actual semiconductor silicon production problems. By separating and classifying the phenomena into chemistry, physics and chemical engineering, really simple understanding is possible. The silicon epitaxial growth and doping are the combination of chemical reactions occurring under the gas flow and temperature fields. The etching and surface contamination are similar. Rapid thermal process and flash lamp annealing are simple physics. For solving the cross linked chemistry and physics, numerical calculations are the useful and powerful tool. From the work considering the classical and advanced chemistry utilizing hydrogen, trichlorosilane, chlorine trifluoride and other gases, scientists and engineers will find a new route shedding future materials process development.
Author: Zang Xiong
Publisher:
ISBN:
Category :
Languages : en
Pages : 92
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Author:
Publisher:
ISBN:
Category : Weights and measures
Languages : en
Pages : 992
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Author:
Publisher:
ISBN:
Category : Power resources
Languages : en
Pages : 760
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Author:
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2540
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