Author: Peter D. Lowen
Publisher:
ISBN:
Category :
Languages : en
Pages : 206
Book Description
Characterization of Ion Implanted ZnSe/GaAs Upon Rapid Thermal Annealing
Author: Peter D. Lowen
Publisher:
ISBN:
Category :
Languages : en
Pages : 206
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 206
Book Description
Characterization of Laser Annealing of Ion Implanted GaAs and Si Using Optical Reflectivity
Author: Bill W. Mullins (2LT, USAF.)
Publisher:
ISBN:
Category : Annealing of crystals
Languages : en
Pages : 112
Book Description
Publisher:
ISBN:
Category : Annealing of crystals
Languages : en
Pages : 112
Book Description
Characterization of Laser Annealing of Ion Implanted GaAs and Si Using Optical Reflectivity
Author: Bill W. Mullins
Publisher:
ISBN:
Category :
Languages : en
Pages : 66
Book Description
The effect of laser annealing on ion implanted GaAs and Si has been assessed using optical reflectivity spectra. The spectra were recorded over the range of 2100A to 4500A and reflectivity peaks were obtained near 2400A and 4100A for GaAs and 2700A and 3700A for Si. The magnitude of these peaks was then observed as a function of annealing parameters. Laser annealing was carried out using a 30 nsec ruby laser pulse. The GaAs samples were implanted 120 KeV Te at a fluence of 10 to the 14th power ions/sq. cm; Si samples were implanted with 30 KeV In at a fluence of 10 to the 15th power ions/sq cm. The reflectivity spectrum of implanted GaAs was found to return to that of unimplanted materials at an annealing energy density of approximately 0.35 J sq. cm. whereas the spectrum of Si was found to approach that of the unimplanted samples at energy densities of 1.34 J/sq. cm. The values obtained compare well with those obtained from other diagnostic techniques. (Author).
Publisher:
ISBN:
Category :
Languages : en
Pages : 66
Book Description
The effect of laser annealing on ion implanted GaAs and Si has been assessed using optical reflectivity spectra. The spectra were recorded over the range of 2100A to 4500A and reflectivity peaks were obtained near 2400A and 4100A for GaAs and 2700A and 3700A for Si. The magnitude of these peaks was then observed as a function of annealing parameters. Laser annealing was carried out using a 30 nsec ruby laser pulse. The GaAs samples were implanted 120 KeV Te at a fluence of 10 to the 14th power ions/sq. cm; Si samples were implanted with 30 KeV In at a fluence of 10 to the 15th power ions/sq cm. The reflectivity spectrum of implanted GaAs was found to return to that of unimplanted materials at an annealing energy density of approximately 0.35 J sq. cm. whereas the spectrum of Si was found to approach that of the unimplanted samples at energy densities of 1.34 J/sq. cm. The values obtained compare well with those obtained from other diagnostic techniques. (Author).
Physics Briefs
Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1256
Book Description
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1256
Book Description
Energy Research Abstracts
Author:
Publisher:
ISBN:
Category : Power resources
Languages : en
Pages : 564
Book Description
Publisher:
ISBN:
Category : Power resources
Languages : en
Pages : 564
Book Description
Characterization of Ion Implanted and Annealed GaAs for an Integrated Circuit Process
Author: John E. Van Leeuwen
Publisher:
ISBN:
Category :
Languages : en
Pages : 224
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 224
Book Description
X-Ray and Backscattering Analysis of Ion Implantation Phenomena in GaAs and Related Compounds
Author: M. A. Nicolet
Publisher:
ISBN:
Category :
Languages : en
Pages : 23
Book Description
It is well-known that amorphous GaAs layers produced by ion implantation behave differently upon thermal annealing from amorphized layers of Si or Ge. The special features of GaAs include non-linear regrowth with time, poor epitaxy at low temperatures, and the necessity of high annealing temperatures for electrical activation. Whilst many models have been proposed, the reasons for these differences are unclear. Double crystal x-ray diffractrometry, interpreted with a model of kinematic diffraction is a new tool which can give accurate information about strain and damage in imperfect crystalline films. It may therefore yeild information about structural characteristics that may explain these differences. The present is for a study of implantation and annealing in GaAs and other materials by this technique, as well as by backscattering spectrometry (BSS).
Publisher:
ISBN:
Category :
Languages : en
Pages : 23
Book Description
It is well-known that amorphous GaAs layers produced by ion implantation behave differently upon thermal annealing from amorphized layers of Si or Ge. The special features of GaAs include non-linear regrowth with time, poor epitaxy at low temperatures, and the necessity of high annealing temperatures for electrical activation. Whilst many models have been proposed, the reasons for these differences are unclear. Double crystal x-ray diffractrometry, interpreted with a model of kinematic diffraction is a new tool which can give accurate information about strain and damage in imperfect crystalline films. It may therefore yeild information about structural characteristics that may explain these differences. The present is for a study of implantation and annealing in GaAs and other materials by this technique, as well as by backscattering spectrometry (BSS).
Electrical & Electronics Abstracts
Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 2304
Book Description
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 2304
Book Description
Scientific and Technical Aerospace Reports
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 704
Book Description
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 704
Book Description
Materials for Optoelectronic Devices, OEICs and Photonics
Author: H. Schlötterer
Publisher: Elsevier
ISBN: 0444596755
Category : Science
Languages : en
Pages : 542
Book Description
The aim of the contributions in this volume is to give a current overview on the basic properties and applications of semiconductor and nonlinear optical materials for optoelectronics and integrated optics. They provide a cross-linkage between different materials (III-V, II-VI, Si-Ge, glasses, etc.), various sample dimensions (from bulk crystals to quantum dots), and a range of techniques for growth (LPE to MOMBE) and for processing (from surface passivation to ion beams). Major growth techniques and materials are discussed, including the sophisticated technologies required to exploit the exciting properties of low dimensional semiconductors. These proceedings will prove an invaluable guide to the current state of optoelectronic and nonlinear optical materials development, as well as indicating trends and also future markets for optoelectronic devices.
Publisher: Elsevier
ISBN: 0444596755
Category : Science
Languages : en
Pages : 542
Book Description
The aim of the contributions in this volume is to give a current overview on the basic properties and applications of semiconductor and nonlinear optical materials for optoelectronics and integrated optics. They provide a cross-linkage between different materials (III-V, II-VI, Si-Ge, glasses, etc.), various sample dimensions (from bulk crystals to quantum dots), and a range of techniques for growth (LPE to MOMBE) and for processing (from surface passivation to ion beams). Major growth techniques and materials are discussed, including the sophisticated technologies required to exploit the exciting properties of low dimensional semiconductors. These proceedings will prove an invaluable guide to the current state of optoelectronic and nonlinear optical materials development, as well as indicating trends and also future markets for optoelectronic devices.