Characterization of Copper Selenide and Copper Phthalocyanine Thin Films Prepared by Vacuum Evaporation Technique PDF Download
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Author: Chow Kian Liew
Publisher:
ISBN:
Category :
Languages : en
Pages : 108
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Author: Chow Kian Liew
Publisher:
ISBN:
Category :
Languages : en
Pages : 108
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Author: Talaat Abd El Hamid El-Desoukey
Publisher:
ISBN: 9783659806827
Category :
Languages : en
Pages : 144
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Author: Mohd. Fairul Sharin Abdul Razak
Publisher:
ISBN:
Category : Electrophoretic deposition
Languages : en
Pages : 242
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Author: Al-Mamun
Publisher:
ISBN:
Category : Copper selenides
Languages : en
Pages :
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Author: Richard B. Belser
Publisher:
ISBN:
Category : Cathode sputtering (Plating process)
Languages : en
Pages : 128
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Author: Aseel Kadhim Hassan
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Category :
Languages : en
Pages :
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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 99
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We describe our progress and final conclusions in our theoretical analysis of the growth of thin films of Copper Phthalocyanine (CuPc) via physical vapor transport using a closed cell ampoule. Three projects are discussed. The first is an analysis of the possibility of convection in the ampoule. This provides the most natural explanation for the experimental differences seen in thin films grown on earth and on the Space Shuttle. However we conclude that convection alone is unlikely to be able to explain these differences. The other two projects examined general features of CuPc crystal growth arising from its very anisotropic shape. The second project modeled the CuPc molecule as a hard square shaped object and examined detailed features of the packing of such objects by a physically motivated deposition algorithm. The third project developed a more realistic intermolecular potential for CuPc involving attractive as well as repulsive intermolecular forces. Crystal structures and diffusion barriers were examined. These considerations have more general applicability to the crystal growth of anisotropic molecules on earth, and we believe further work along these lines is called for. jg.
Author: Rui Kamada
Publisher: ProQuest
ISBN: 9780549926849
Category : Copper
Languages : en
Pages :
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Cu(In, Ga)Se 2 film fabrication by the selenization of the mixed metal/metal-selenide precursors was investigated. For the precursor preparation, the combination of electro deposition, annealing, co-evaporation and pre-selenization methods were employed with sequential sputtering as a control. The precursor structures studied were CuSe/Ga/In, Cu 2-x Se/Ga/In, (Ga, In)-Se/Cu and metallic Cu-Ga/In as a control. Cu 2-x Se/Ga/In precursors were prepared from both electro deposition and co-evaporation. These precursors were selenized in H 2 Se at at 450°C for 5, 15, and 90min. The structures of the precursors and reacted films were examined in terms of the crystalline phases, compositions and morphologies by scanning electron microscopy, energy dispersive spectroscopy, symmetric and asymmetric X-ray diffraction, and Auger electron spectroscopy. The similar selenization reaction rates were obtained for the precursors with copper selenide/Ga/In structures as that for the control precursor while that for the (Ga, In)-Se/Cu seems to be slower than the control. Ga accumulation at the backside of the selenized film was universally observed for the precursors including the control Cu-Ga/In precursor, with the exception of one precursor with the structure of CuSe/Ga/In made from electro deposition. For the CuSe/Ga/In precursor, a hill-like Ga profile with the maximum Ga concentration at the middle of the film was obtained. In addition, increased Ga composition at the front side of the selenized film was obtained for the Cu 2-x Se/Ga/In precursor made from electro deposition compared to the control. The device performance of the solar cells made of these selenized films were also investigated and related to the film properties. The comparable conversion efficiencies were obtained from the three precursors with copper selenide/Ga/In structures as the control. The long wavelength edge of external quantum efficiency curve indicates larger bandgap than the control for the films made from the two precursors including the CuSe/Ga/In and Cu 2-x Se/Ga/In, both started with electron deposition. The enhanced Ga incorporation into Cu(In, Ga)Se 2 structure corresponds to the larger bandgap for these precursors.
Author:
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Category : Aeronautics
Languages : en
Pages : 1798
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Author:
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ISBN:
Category : Aeronautics
Languages : en
Pages : 1340
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