Characterization and Simulations of Long Wavelength Indium Aluminum Gallium Arsenideindium Phosphide Lasers PDF Download
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Author: Julie Nkanta
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Book Description
This thesis studies the characterization and simulation of long wavelength indium aluminium gallium arsenide (InAlGaAs) lattice-matched to indium phosphide (InP) diode laser, emitting between 1.648 to 1.7 mum in wavelength. The active region of one laser diode sample consists of six In0.69Ga 0.31As quantum wells (1.0% compressive strain) and seven In0.52 Al0.36Ga0.12As unstrained barriers. The lasers are grown using digital alloy molecular beam epitaxy (MBE). The band diagram analysis shows a large conduction band offset which is typical of InAlGaAs lasers. The geometry-dependent and temperature-dependent measurement as well as the laser optical gain, loss and spectral properties were carried out and comparison done for different ridge widths (1.2 to 2.8mum), cavity lengths (555 to 2200mum) and temperature range between 25 and 70°C. The output power as a function of current characteristics reveals threshold current increase with cavity lengths and ridge widths with thermal roll-off occurring at higher injection currents. The slope efficiency and external differential quantum efficiency increases for the narrowest and widest ridge widths within the same cavity length laser device but decreases with increase in cavity length. The temperature analysis shows longer cavity length lasers exhibit better temperature characteristic than the shorter cavity length laser devices indicating the better thermal stability of the longer cavity lasers. Temperature elevations also caused increase in threshold current and decrease in efficiencies. The temperature distribution shows a higher temperature in the active region than the operating temperature due to self heating of the laser devices in continuous wave operation. The optical spectrum exhibits red-shifting of the emission wavelength with increasing bias current and temperature.
Author: Julie Nkanta
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Book Description
This thesis studies the characterization and simulation of long wavelength indium aluminium gallium arsenide (InAlGaAs) lattice-matched to indium phosphide (InP) diode laser, emitting between 1.648 to 1.7 mum in wavelength. The active region of one laser diode sample consists of six In0.69Ga 0.31As quantum wells (1.0% compressive strain) and seven In0.52 Al0.36Ga0.12As unstrained barriers. The lasers are grown using digital alloy molecular beam epitaxy (MBE). The band diagram analysis shows a large conduction band offset which is typical of InAlGaAs lasers. The geometry-dependent and temperature-dependent measurement as well as the laser optical gain, loss and spectral properties were carried out and comparison done for different ridge widths (1.2 to 2.8mum), cavity lengths (555 to 2200mum) and temperature range between 25 and 70°C. The output power as a function of current characteristics reveals threshold current increase with cavity lengths and ridge widths with thermal roll-off occurring at higher injection currents. The slope efficiency and external differential quantum efficiency increases for the narrowest and widest ridge widths within the same cavity length laser device but decreases with increase in cavity length. The temperature analysis shows longer cavity length lasers exhibit better temperature characteristic than the shorter cavity length laser devices indicating the better thermal stability of the longer cavity lasers. Temperature elevations also caused increase in threshold current and decrease in efficiencies. The temperature distribution shows a higher temperature in the active region than the operating temperature due to self heating of the laser devices in continuous wave operation. The optical spectrum exhibits red-shifting of the emission wavelength with increasing bias current and temperature.
Author: Edward Martin Stellini
Publisher:
ISBN:
Category :
Languages : en
Pages : 116
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Author: Kevin John Beernink
Publisher:
ISBN:
Category :
Languages : en
Pages : 106
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Author: Edward Anthony Rezek
Publisher:
ISBN:
Category : Semiconductor lasers
Languages : en
Pages : 134
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Author: Brian John Skromme
Publisher:
ISBN:
Category :
Languages : en
Pages : 352
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Author: Carrie Anne Carter
Publisher:
ISBN:
Category :
Languages : en
Pages : 96
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Author: Julie Nkanta
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ISBN:
Category : Optoelectronics
Languages : en
Pages : 258
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Author: Jean Wei
Publisher:
ISBN: 9781288229895
Category : Gallium arsenide
Languages : en
Pages : 164
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Book Description
A new method to determine semiconductor bandgap energy directly from the easily measured transmission spectra was developed. The method was verified using many binary semiconductors with known properties and utilized to determine the unknown ternary semiconductors were determined at various wavelengths and temperatures. Photoluminescence and Hall-effect measurement were performed to identify various electronic transitions, as well as sample quality. The determination of electrical and optical properties of the material will provide important addition to the database of material properties for future optoelectronic device applications. In the near future, newer materials and their applications need to be developed, and often binary and ternary III-V compounds (GaSb, GaP, GaSbP etc.) can be studied using the method developed in this work.
Author:
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ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 830
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Author: Jan-Philipp Koester
Publisher: Cuvillier Verlag
ISBN: 3736968825
Category :
Languages : en
Pages : 171
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Book Description
Edge-emitting quantum-well diode lasers based on GaAs combine a high conversion efficiency, a wide range of emission wavelengths covering a span from 630 nm to 1180 nm, and the ability to achieve high output powers. The often used longitudinal-invariant Fabry-Pérot-type resonators are easy to design but often lead to functionality or performance limitations. In this work, the application of laterally-longitudinally non-uniform resonator configurations is explored as a way to reduce unwanted and performance-limiting effects. The investigations are carried out on existing and entirely newly developed laser designs using dedicated simulation tools. These include a sophisticated time-dependent laser simulator based on a traveling-wave model of the optical fields in the lateral-longitudinal plane and a Maxwell solver based on the eigenmode expansion method for the simulation of passive waveguides. Whenever possible, the simulation results are compared with experimental data. Based on this approach, three fundamentally different laser types are investigated: • Dual-wavelength lasers emitting two slightly detuned wavelengths around 784 nm out of a single aperture • Ridge-waveguide lasers with tapered waveguide and contact layouts that emit light of a wavelength of around 970 nm • Broad-area lasers with slightly tapered contact layouts emitting at 910 nm The results of this thesis underline the potential of lateral-longitudinal non-uniform laser designs to increase selected aspects of device performance, including beam quality, spectral stability, and output power.
