Author: Julie Nkanta
Publisher:
ISBN:
Category : Optoelectronics
Languages : en
Pages : 258
Book Description
Characterization and Simulations of Long Wavelength InAlGaAs/InP Lasers
Author: Julie Nkanta
Publisher:
ISBN:
Category : Optoelectronics
Languages : en
Pages : 258
Book Description
Publisher:
ISBN:
Category : Optoelectronics
Languages : en
Pages : 258
Book Description
Characterization and Simulations of Long Wavelength Indium Aluminum Gallium Arsenideindium Phosphide Lasers
Author: Julie Nkanta
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
This thesis studies the characterization and simulation of long wavelength indium aluminium gallium arsenide (InAlGaAs) lattice-matched to indium phosphide (InP) diode laser, emitting between 1.648 to 1.7 mum in wavelength. The active region of one laser diode sample consists of six In0.69Ga 0.31As quantum wells (1.0% compressive strain) and seven In0.52 Al0.36Ga0.12As unstrained barriers. The lasers are grown using digital alloy molecular beam epitaxy (MBE). The band diagram analysis shows a large conduction band offset which is typical of InAlGaAs lasers. The geometry-dependent and temperature-dependent measurement as well as the laser optical gain, loss and spectral properties were carried out and comparison done for different ridge widths (1.2 to 2.8mum), cavity lengths (555 to 2200mum) and temperature range between 25 and 70°C. The output power as a function of current characteristics reveals threshold current increase with cavity lengths and ridge widths with thermal roll-off occurring at higher injection currents. The slope efficiency and external differential quantum efficiency increases for the narrowest and widest ridge widths within the same cavity length laser device but decreases with increase in cavity length. The temperature analysis shows longer cavity length lasers exhibit better temperature characteristic than the shorter cavity length laser devices indicating the better thermal stability of the longer cavity lasers. Temperature elevations also caused increase in threshold current and decrease in efficiencies. The temperature distribution shows a higher temperature in the active region than the operating temperature due to self heating of the laser devices in continuous wave operation. The optical spectrum exhibits red-shifting of the emission wavelength with increasing bias current and temperature.
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
This thesis studies the characterization and simulation of long wavelength indium aluminium gallium arsenide (InAlGaAs) lattice-matched to indium phosphide (InP) diode laser, emitting between 1.648 to 1.7 mum in wavelength. The active region of one laser diode sample consists of six In0.69Ga 0.31As quantum wells (1.0% compressive strain) and seven In0.52 Al0.36Ga0.12As unstrained barriers. The lasers are grown using digital alloy molecular beam epitaxy (MBE). The band diagram analysis shows a large conduction band offset which is typical of InAlGaAs lasers. The geometry-dependent and temperature-dependent measurement as well as the laser optical gain, loss and spectral properties were carried out and comparison done for different ridge widths (1.2 to 2.8mum), cavity lengths (555 to 2200mum) and temperature range between 25 and 70°C. The output power as a function of current characteristics reveals threshold current increase with cavity lengths and ridge widths with thermal roll-off occurring at higher injection currents. The slope efficiency and external differential quantum efficiency increases for the narrowest and widest ridge widths within the same cavity length laser device but decreases with increase in cavity length. The temperature analysis shows longer cavity length lasers exhibit better temperature characteristic than the shorter cavity length laser devices indicating the better thermal stability of the longer cavity lasers. Temperature elevations also caused increase in threshold current and decrease in efficiencies. The temperature distribution shows a higher temperature in the active region than the operating temperature due to self heating of the laser devices in continuous wave operation. The optical spectrum exhibits red-shifting of the emission wavelength with increasing bias current and temperature.
Long-Wavelength Infrared Semiconductor Lasers
Author: Hong K. Choi
Publisher: John Wiley & Sons
ISBN: 9780471392002
Category : Science
Languages : en
Pages : 418
Book Description
Long-wavelength Infrared Semiconductor Lasers provides a comprehensive review of the current status of semiconductor coherent sources emitting in the mid-to far-infrared spectrum and their applications. It includes three topics not covered in any previous book: far-infrared emission from photo-mixers as well as from hot-hole lasers, and InP-based lasers emitting beyond two micrometers. Semiconductor lasers emitting at more than two micrometers have many applications such as in trace gas analysis, environmental monitoring, and industrial process control. Because of very rapid progress in recent years, until this book no comprehensive information beyond scattered journal articles is available at present.
Publisher: John Wiley & Sons
ISBN: 9780471392002
Category : Science
Languages : en
Pages : 418
Book Description
Long-wavelength Infrared Semiconductor Lasers provides a comprehensive review of the current status of semiconductor coherent sources emitting in the mid-to far-infrared spectrum and their applications. It includes three topics not covered in any previous book: far-infrared emission from photo-mixers as well as from hot-hole lasers, and InP-based lasers emitting beyond two micrometers. Semiconductor lasers emitting at more than two micrometers have many applications such as in trace gas analysis, environmental monitoring, and industrial process control. Because of very rapid progress in recent years, until this book no comprehensive information beyond scattered journal articles is available at present.
Effects of Intentionally Introduced Mismatch Strain on the Operating Characteristics and Temperature Performance of InGaAsP/InP Long Wavelength Semiconductor Lasers
Author: John Douglas Evans
Publisher:
ISBN:
Category : Quantum electronics
Languages : en
Pages : 536
Book Description
Publisher:
ISBN:
Category : Quantum electronics
Languages : en
Pages : 536
Book Description
Optoelectronic Devices
Author: Xun Li
Publisher: Cambridge University Press
ISBN: 1139478508
Category : Technology & Engineering
Languages : en
Pages : 363
Book Description
With a clear application focus, this book explores optoelectronic device design and modeling through physics models and systematic numerical analysis. By obtaining solutions directly from the physics-based governing equations through numerical techniques, the author shows how to develop new devices and how to enhance the performance of existing devices. Semiconductor-based optoelectronic devices such as semiconductor laser diodes, electroabsorption modulators, semiconductor optical amplifiers, superluminescent light emitting diodes and their integrations are all covered. Including step-by-step practical design and simulation examples together with detailed numerical algorithms, this book provides researchers, device designers and graduate students in optoelectronics with the numerical techniques to obtain solutions for their own structures.
Publisher: Cambridge University Press
ISBN: 1139478508
Category : Technology & Engineering
Languages : en
Pages : 363
Book Description
With a clear application focus, this book explores optoelectronic device design and modeling through physics models and systematic numerical analysis. By obtaining solutions directly from the physics-based governing equations through numerical techniques, the author shows how to develop new devices and how to enhance the performance of existing devices. Semiconductor-based optoelectronic devices such as semiconductor laser diodes, electroabsorption modulators, semiconductor optical amplifiers, superluminescent light emitting diodes and their integrations are all covered. Including step-by-step practical design and simulation examples together with detailed numerical algorithms, this book provides researchers, device designers and graduate students in optoelectronics with the numerical techniques to obtain solutions for their own structures.
Scientific and Technical Aerospace Reports
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 702
Book Description
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 702
Book Description
Vertical-Cavity Surface-Emitting Lasers
Author: Carl W. Wilmsen
Publisher: Cambridge University Press
ISBN: 9780521006293
Category : Science
Languages : en
Pages : 478
Book Description
This book, first published in 1999, provides a comprehensive description of the physics, design, fabrication, characterization, and applications of vertical-cavity surface-emitting lasers.
Publisher: Cambridge University Press
ISBN: 9780521006293
Category : Science
Languages : en
Pages : 478
Book Description
This book, first published in 1999, provides a comprehensive description of the physics, design, fabrication, characterization, and applications of vertical-cavity surface-emitting lasers.
Japanese Science and Technology, 1983-1984
Author: United States. National Aeronautics and Space Administration. Scientific and Technical Information Branch
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 1080
Book Description
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 1080
Book Description
Computing Information Directory
Author: Darlene Myers Hildebrandt
Publisher:
ISBN:
Category : Computer science literature
Languages : en
Pages : 494
Book Description
Publisher:
ISBN:
Category : Computer science literature
Languages : en
Pages : 494
Book Description
Long Wavelength InGaAsP/InP Lasers and Optoelectronic Integration
Author: Paul Kit-Lai Yu
Publisher:
ISBN:
Category : Electronic dissertations
Languages : en
Pages : 146
Book Description
Publisher:
ISBN:
Category : Electronic dissertations
Languages : en
Pages : 146
Book Description