CdS/CdTe Solar Cells Containing Directly Deposited CdSxTe1-x Alloy Layers :. PDF Download
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Languages : en
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Category : Cadmium sulfide
Languages : en
Pages : 6
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A CdSxTe1-x layer forms by interdiffusion of CdS and CdTe during the fabrication of thin-film CdTe photovoltaic (PV) devices. The CdSxTe1-x layer is thought to be important because it relieves strain at the CdS/CdTe interface that would otherwise exist due to the 10% lattice mismatch between these two materials. Our previous work [1] has indicated that the electrical junction is located in this interdiffused CdSxTe1-x region. Further understanding, however, is essential to predict the role of this CdSxTe1-x layer in the operation of CdS/CdTe devices. In this study, CdSxTe1-x alloy films were deposited by radio-frequency (RF) magnetron sputtering and co-evaporation from CdTe and CdS sources. Both RF-magnetron-sputtered and co-evaporated CdSxTe1-x films of lower S content (x
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Category : Cadmium sulfide
Languages : en
Pages : 6
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A CdSxTe1-x layer forms by interdiffusion of CdS and CdTe during the fabrication of thin-film CdTe photovoltaic (PV) devices. The CdSxTe1-x layer is thought to be important because it relieves strain at the CdS/CdTe interface that would otherwise exist due to the 10% lattice mismatch between these two materials. Our previous work has indicated that the electrical junction is located in this interdiffused CdSxTe1-x region. Further understanding, however, is essential to predict the role of this CdSxTe1-x layer in the operation of CdS/CdTe devices. In this study, CdSxTe1-x alloy films were deposited by RF magnetron sputtering and co-evaporation from CdTe and CdS sources. Both radio-frequency-magnetron-sputtered and co-evaporated CdSxTe1-x films of lower S content (x
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Languages : en
Pages : 0
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A CdSxTe1-x layer forms by interdiffusion of CdS and CdTe during the fabrication of thin-film CdTe photovoltaic (PV) devices. The CdSxTe1-x layer is thought to be important because it relieves strain at the CdS/CdTe interface that would otherwise exist due to the 10% lattice mismatch between these two materials. Our previous work [1] has indicated that the electrical junction is located in thisinterdiffused CdSxTe1-x region. Further understanding, however, is essential to predict the role of this CdSxTe1-x layer in the operation of CdS/CdTe devices. In this study, CdSxTe1-x alloy films were deposited by RF magnetron sputtering and co-evaporation from CdTe and CdS sources. Both radio-frequency-magnetron-sputtered and co-evaporated CdSxTe1-x films of lower S content (x
![Advanced Processing of CdTe- and CuIn[subscript 1-x]Ga[subscript x]Se2-Based Solar Cells: Final Technical Report, 26 May 1998-22 December 2001 PDF](https://books.google.com/books/content/images/frontcover/HZUQWv8PMD0C?fife=w80-h100)
Author: Don Louis Morel
Publisher: DIANE Publishing
ISBN: 1428917292
Category :
Languages : en
Pages : 51
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Author: Guogen Liu
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Languages : en
Pages : 105
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Cadmium telluride is the only thin film photovoltaic (PV) technology to surpass crystalline silicon PV in the cost. The most common CdTe solar cells consist of a simple p-n heterojunction structure containing a p-doped CdTe layer and n-doped cadmium sulfide (CdS) layer, which acts as a window layer. Cadmium Sulfide (CdS) thin films are often deposited on glass substrates coated with TCO layers by the close-spaced sublimation (CSS) or sputter techniques in industrial because of in-line production integration. It is seldom reported that CdS is deposited by the chemical bath deposition (CBD) batch process. The bottleneck of CBD for commercial application is its low production rate and waste water treatment. This dissertation reports how to produce different thickness large area (100cm2) CdS thin film by CBD. The influence of the solution temperature and concentration on the thickness of CdS is investigated. This dissertation also reports a growth model for CdTe deposition including diffusion limited and sublimation limited. The model was consistent with experimental observations and showed very good agreement over a range of operating conditions.
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Languages : en
Pages : 7
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This conference paper describes the alloying between CdS and CdTe at the CdS/CdTe interface is a function of the growth temperature and post-deposition CdCl2 heat treatment (HT). In devices prepared by different techniques, Te-rich CdSxTe1-x alloys with x= 0.04 to 0.08 have been identified. We present our work on thin-film couples of CdS and CdTe, which can withstand higher level of CdCl2 treatment without the adhesion problems typically encountered in the regular device structure. CdS films with a thickness of (almost equal to)100 nm were deposited by chemical-bath deposition on glass/SnO2 substrates, and CdTe films with a thickness of 300 and 800 nm were deposited by close-spaced sublimation. The samples were treated in the presence of vapor CdCl2 at 400-450 C for 5 min. X-ray diffraction and optical analysis of the samples showed that S content in the CdSxTe1-x alloy increased systematically with the CdCl2 HT temperature. CdSxTe1-x alloy with x= 0.14 was identified for the samples treated at 4 30C, which is much higher than expected from the miscibility gap at 430C.
Author: Jonathan Major
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Category : Solar cells
Languages : en
Pages :
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A systematic study is presented on the control of CdTe and CdS layers during their growth, with the understanding gained being implemented in the production of solar cells with enhanced performance. In particular the growth mechanisms for close space sublimation (CSS)? grown CdTe were evaluated as a function of processing gas (N2, 02 and H2) and nitrogen pressure. Films were shown to form via the Volmer-Weber growth mode with films deposited under nitrogen showing well defined crystal facets. Inclusion of oxygen in the deposition ambient produced islands of a rounded morphology, reduced size and increased number density, whilst hydrogen was shown to increase the island number density and the level of substrate coverage. Growth mechanisms were deduced from the morphologies observed at different stages of growth by ex-situ AFM and SEM and by comparison with growth literature, especially the work of P. Barna. Nucleation density, step flow and impurity incorporation are all invoked in the discussion. Factors influencing the cell performance were evaluated with the aid of a optical beam induced current (OBIC) and external quantum efficiency (EQE) system built as part of this work and having the capacity to measure EQE or OBIC maps with a resolution of 12.5pm. The system was used to evaluate the photovoltaic response of CdTe/CdS devices as a function of wavelength with the impact of the nitric-phosphoric acid (NP) etch on the back surface, the uniformity of CdTe/CdS devices deposited by different methods and the effect of absorber layer thickness of PV uniformity being assessed. The performance of CdTe/CdS devices was evaluated as a function of variables that could be influenced by growth of the CdTe and CdS layers. The use of lower substrate temperature and the incorporation oxygen in CdS increased V? from 0.51 to 0.65V is discussed. Oxygen in the CdTe was also shown to influence the junction position and hence efficiency, while oxygen in the CdS layer was also shown to be vital for the formation of hetero-junctions. The CdTe grain size was shown to be significantly increased for deposition under higher nitrogen pressures (Grain diameter = [0.027P + 0.9]gm, where P is the pressure in Torr), with the average grain diameters being 0.94pm at 2Torr and 5.63pm at 200Torr. Device performance was improved as a result with the peak device efficiency being increased from 2.1% at 2Torr to 14.1% at 100Torr. The series resistance was shown to be minimised for larger grain size, owing to the reduced contribution of grain boundaries. Suggestions for the fabrication of high efficiency solar cells are given with reference to the efficiency limiting factor.
Author: Ramesh G. Dhere
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Category : Cadmium sulfide photoconductive cells
Languages : en
Pages : 4
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Languages : en
Pages : 0
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This report describes work done by the University of Toledo during the first year of this subcontract. During this time, the CdTe group constructed a second dual magnetron sputter deposition facility; optimized reactive sputtering for ZnTe:N films to achieve 10 ohm-cm resistivity and~9% efficiency cells with a copper-free ZnTe:N/Ni contact; identified Cu-related photoluminescence features andstudied their correlation with cell performance including their dependence on temperature and E-fields; studied band-tail absorption in CdSxTe1-x films at 10 K and 300 K; collaborated with the National CdTe PV Team on 1) studies of high-resistivity tin oxide (HRT) layers from ITN Energy Systems, 2) fabrication of cells on the HRT layers with 0, 300, and 800-nm CdS, and 3) preparation ofZnTe:N-based contacts on First Solar materials for stress testing; and collaborated with Brooklyn College for ellipsometry studies of CdSxTe1-x alloy films, and with the University of Buffalo/Brookhaven NSLS for synchrotron X-ray fluorescence studies of interdiffusion in CdS/CdTe bilayers. The a-Si group established a baseline for fabricating a-Si-based solar cells with single, tandem, andtriple-junction structures; fabricated a-Si/a-SiGe/a-SiGe triple-junction solar cells with an initial efficiency of 9.7% during the second quarter, and 10.6% during the fourth quarter (after 1166 hours of light-soaking under 1-sun light intensity at 50 deg C, the 10.6% solar cells stabilized at about 9%); fabricated wide-bandgap a-Si top cells, the highest Voc achieved for the single-junction topcell was 1.02 V, and top cells with high FF (up to 74%) were fabricated routinely; fabricated high-quality narrow-bandgap a-SiGe solar cells with 8.3% efficiency; found that bandgap-graded buffer layers improve the performance (Voc and FF) of the narrow-bandgap a-SiGe bottom cells; and found that a small amount of oxygen partial pressure (~2 X10 -5 torr) was beneficial for growing high-qualityfilms from ITO targets.
