Cathodoluminescence Characterization of Ion Implanted GaAs PDF Download
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Author: Milton L. Cone (MAJ, USAF.)
Publisher:
ISBN:
Category : Cathodoluminescence
Languages : en
Pages :
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Author: Milton L. Cone (MAJ, USAF.)
Publisher:
ISBN:
Category : Cathodoluminescence
Languages : en
Pages :
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Author: Milton L. Cone
Publisher:
ISBN:
Category :
Languages : en
Pages : 135
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The unique properties of GaAs make it possible to construct integrated circuit devices that are impossible in Si. The Air Force Avionics Laboratory/AADR has been developing this technology for a number of years. The difficulty of introducing dopants by diffusion has lead ion implantation to play an increasing role in the fabrication process. The present production technique for high performance devices is to fabricate large quantities and select those few that meet the desired specifications. Having a nondestructive technique that can be used to characterize the implantation process during fabrication of the device so as to reject faulty device structures can save valuable time as well as money. Depth-resolved cathodoluminescence is a process that can be used for this purpose. This research develops and verifies a model of cathodoluminescence in ion implanted GaAs. This model can now be used as a tool for further study of ion implanted GaAs. This is the first step in developing cathodoluminescence as a tool for deducing the shape of the ion implanted depth profile in semiconductor materials. (Author).
Author: Air Force Wright Aeronautical Laboratories
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ISBN:
Category : Gallium arsenide
Languages : en
Pages : 112
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Author:
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Category : Aeronautics
Languages : en
Pages : 1572
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Author: Bill W. Mullins (2LT, USAF.)
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ISBN:
Category : Annealing of crystals
Languages : en
Pages : 112
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Author: Bill W. Mullins
Publisher:
ISBN:
Category :
Languages : en
Pages : 66
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The effect of laser annealing on ion implanted GaAs and Si has been assessed using optical reflectivity spectra. The spectra were recorded over the range of 2100A to 4500A and reflectivity peaks were obtained near 2400A and 4100A for GaAs and 2700A and 3700A for Si. The magnitude of these peaks was then observed as a function of annealing parameters. Laser annealing was carried out using a 30 nsec ruby laser pulse. The GaAs samples were implanted 120 KeV Te at a fluence of 10 to the 14th power ions/sq. cm; Si samples were implanted with 30 KeV In at a fluence of 10 to the 15th power ions/sq cm. The reflectivity spectrum of implanted GaAs was found to return to that of unimplanted materials at an annealing energy density of approximately 0.35 J sq. cm. whereas the spectrum of Si was found to approach that of the unimplanted samples at energy densities of 1.34 J/sq. cm. The values obtained compare well with those obtained from other diagnostic techniques. (Author).
Author: John E. Van Leeuwen
Publisher:
ISBN:
Category :
Languages : en
Pages : 224
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Author:
Publisher: Academic Press
ISBN: 0080864430
Category : Technology & Engineering
Languages : en
Pages : 335
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Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. - Provides basic knowledge of ion implantation-induced defects - Focuses on physical mechanisms of defect annealing - Utilizes electrical, physical, and optical characterization tools for processed semiconductors - Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination
Author:
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 1186
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Author: Peter D. Lowen
Publisher:
ISBN:
Category :
Languages : en
Pages : 206
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