Caractérisation, Modélisation Et Simulation Des Transistors SOI MOSFET Décananométriques PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Caractérisation, Modélisation Et Simulation Des Transistors SOI MOSFET Décananométriques PDF full book. Access full book title Caractérisation, Modélisation Et Simulation Des Transistors SOI MOSFET Décananométriques by Noel Rodriguez Santiago. Download full books in PDF and EPUB format.
Author: Noel Rodriguez Santiago
Publisher:
ISBN:
Category :
Languages : en
Pages : 201
Get Book Here
Book Description
ln this work, the impact and challenges of the decananometric miniaturization of today shrinking CM OS devices, fabricated on SOI and bulk Si, are investigated. The inclusion of quantum effects to accurately describe the behavior of the MOS transistors with single or multiple gates is studied. Poisson and SchrOdinger equations are self-consistently solved in several cases of interest showing the consequences of the physical mechanisms when the decananometric limit is achieved. Among various effects, the carrier quantization, charge centroids, darks spaces, polysilicon depletion, remote scattering mechanisms effects... are reported and modeled. The electrical characterization techniques both at the wafer level and device level are revisited and studied in the framework of today 4Snm technological node. Recent results, obtained using the pseudo-MOSFET characterization technique on as-fabricated wafers, are explained by means of numerical simulations. The reliable Y-function is extended for double channel devices and used ta reveal the beneficial effect of volume inversion, for the first time from usual static characteristics. For many years, the mobility has been a hot issue surrounded by a lot of research effort. This struggle has continued until nowadays when the technology is approaching the end of the Roadmap. ln this work, two conventional technology-compatible techniques are exploited as mobility boosters through Monte Carlo simulation: alternative crystallographic orientations for the device architecture and the use of strained silicon as channel material. This synopsis of the Ph.D. dissertation is not a closed work, since it rather establishes some of the guidelines and problems ta deal with in a short term future.
Author: Noel Rodriguez Santiago
Publisher:
ISBN:
Category :
Languages : en
Pages : 201
Get Book Here
Book Description
ln this work, the impact and challenges of the decananometric miniaturization of today shrinking CM OS devices, fabricated on SOI and bulk Si, are investigated. The inclusion of quantum effects to accurately describe the behavior of the MOS transistors with single or multiple gates is studied. Poisson and SchrOdinger equations are self-consistently solved in several cases of interest showing the consequences of the physical mechanisms when the decananometric limit is achieved. Among various effects, the carrier quantization, charge centroids, darks spaces, polysilicon depletion, remote scattering mechanisms effects... are reported and modeled. The electrical characterization techniques both at the wafer level and device level are revisited and studied in the framework of today 4Snm technological node. Recent results, obtained using the pseudo-MOSFET characterization technique on as-fabricated wafers, are explained by means of numerical simulations. The reliable Y-function is extended for double channel devices and used ta reveal the beneficial effect of volume inversion, for the first time from usual static characteristics. For many years, the mobility has been a hot issue surrounded by a lot of research effort. This struggle has continued until nowadays when the technology is approaching the end of the Roadmap. ln this work, two conventional technology-compatible techniques are exploited as mobility boosters through Monte Carlo simulation: alternative crystallographic orientations for the device architecture and the use of strained silicon as channel material. This synopsis of the Ph.D. dissertation is not a closed work, since it rather establishes some of the guidelines and problems ta deal with in a short term future.
Author: Daniela Munteanu
Publisher:
ISBN:
Category :
Languages : fr
Pages : 180
Get Book Here
Book Description
L'OBJET DE CETTE THESE EST DE CONTRIBUER A L'ANALYSE ET A L'OPTIMISATION DES MATERIAUX SOI ET AU DEVELOPPEMENT DE MODELES PHYSIQUES ET DE METHODES DE CARACTERISATION ADAPTEES AUX DISPOSITIFS SOI. DANS LE PREMIER CHAPITRE, NOUS RAPPELONS L'INTERET DE LA TECHNOLOGIE SOI, SES AVANTAGES ET SES INCONVENIENTS PAR RAPPORT A LA TECHNOLOGIE SI MASSIF. LE DEUXIEME CHAPITRE EST CONSACRE A LA CARACTERISATION DU MATERIAU, EN UTILISANT LA TECHNIQUE -MOSFET, METHODE TRES APPROPRIEE POUR COMPARER LA QUALITE ET LES PARAMETRES ELECTRIQUES DES DIFFERENTES STRUCTURES SOI. UNE ANALYSE APPROFONDIE DE LA VALIDITE DE CETTE TECHNIQUE EST REALISEE PAR SIMULATION NUMERIQUE. LA TECHNIQUE -MOSFET EST ENSUITE APPLIQUEE A L'ANALYSE DE PLUSIEURS MATERIAUX SOI ET DE CERTAINS PROCEDES TECHNOLOGIQUES. LE TROISIEME CHAPITRE PORTE SUR LA CARACTERISATION DES DISPOSITIFS SOI FINIS, AVEC UNE ETUDE DETAILLEE DU FONCTIONNEMENT EN HAUTE ET BASSE TEMPERATURE. NOUS PRESENTONS UNE ANALYSE DE TRANSISTORS SOI ULTIMES : (A) LE FONCTIONNEMENT EN BASSE TEMPERATURE DU DT-MOS EST ETUDIE EXPERIMENTALEMENT ET SES AVANTAGES PAR RAPPORT AUX STRUCTURES CLASSIQUES SONT MIS EN EVIDENCE ; (B) DES MESURES SUR DES TMOS ULTRA-MINCES DEMONTRENT LEUR FONCTIONNALITE AINSI QUE L'IMPACT DE MECANISMES PHYSIQUES PARTICULIERS (INVERSION VOLUMIQUE, FORT COUPLAGE DES INTERFACES, EFFETS QUANTIQUES). LE QUATRIEME CHAPITRE EST CONSACRE A L'ANALYSE ET A LA MODELISATION DES MECANISMES TRANSITOIRES DANS LES TMOS/SOI. DIFFERENTS TYPES DE TRANSITOIRES DU COURANT DE DRAIN (OVERSHOOT ET UNDERSHOOT, SIMPLE ET DOUBLE GRILLE) SONT MESURES ET SIMULES AVEC ATLAS ET SOI-SPICE. CES PHENOMENES SONT UTILISES A L'EXTRACTION DE LA DUREE DE VIE DES PORTEURS, PARAMETRE ESSENTIEL QUI REFLETE LA QUALITE DU FILM SOI.
