Capacitance Characteristics of RF Sputtered CdS/CdTe Solar Cells PDF Download
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Author: Faming Shen
Publisher:
ISBN:
Category : Solar cells
Languages : en
Pages : 94
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Book Description
Author: Faming Shen
Publisher:
ISBN:
Category : Solar cells
Languages : en
Pages : 94
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Book Description
Author: Francis Georges Courreges
Publisher:
ISBN:
Category : Solar batteries
Languages : en
Pages : 152
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Author:
Publisher:
ISBN:
Category : Solar energy
Languages : en
Pages : 606
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Book Description
Author: Vijay Viswanathan
Publisher:
ISBN:
Category : Cadmium sulfide photoconductive cells
Languages : en
Pages : 134
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Author:
Publisher:
ISBN:
Category : Power resources
Languages : en
Pages : 436
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Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 732
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Book Description
Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
![Advanced Processing of CdTe- and CuIn[subscript 1-x]Ga[subscript x]Se2-Based Solar Cells: Final Technical Report, 26 May 1998-22 December 2001 PDF](https://books.google.com/books/content/images/frontcover/HZUQWv8PMD0C?fife=w80-h100)
Author: Don Louis Morel
Publisher: DIANE Publishing
ISBN: 1428917292
Category :
Languages : en
Pages : 51
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Author: Naba Raj Paudel
Publisher:
ISBN:
Category : Photovoltaic cells
Languages : en
Pages : 180
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Author:
Publisher:
ISBN:
Category : Cadmium sulfide
Languages : en
Pages : 6
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Book Description
A CdSxTe1-x layer forms by interdiffusion of CdS and CdTe during the fabrication of thin-film CdTe photovoltaic (PV) devices. The CdSxTe1-x layer is thought to be important because it relieves strain at the CdS/CdTe interface that would otherwise exist due to the 10% lattice mismatch between these two materials. Our previous work has indicated that the electrical junction is located in this interdiffused CdSxTe1-x region. Further understanding, however, is essential to predict the role of this CdSxTe1-x layer in the operation of CdS/CdTe devices. In this study, CdSxTe1-x alloy films were deposited by RF magnetron sputtering and co-evaporation from CdTe and CdS sources. Both radio-frequency-magnetron-sputtered and co-evaporated CdSxTe1-x films of lower S content (x
Author: Victor Plotnikov
Publisher:
ISBN:
Category : Magnetrons
Languages : en
Pages : 212
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Book Description
CdTe is a nearly perfect absorber material for second generation polycrystalline solar cells because the bandgap closely matches the peak of the solar spectrum, relatively high absorption coefficient and good electronic properties in the polycrystalline phase. Fabricating high-efficiency CdS/CdTe solar cells with an ultra-thin absorber layer is a challenging yet highly desirable step in improving CdTe technology. Most of today's CdTe solar cells utilize an absorber layer which is about 2.5 microns to 8 microns thick. Thinning this layer down typically results in poorer cell performance due to shunting, incomplete photon absorption, fully depleted CdTe layer or interference between the main and the back contact junction when the CdTe layer thickness approaches a certain limit. While some of these losses are fundamental, others can be minimized by careful optimization of the fabrication steps. In this dissertation I present the results of such optimization. Magnetron sputtered CdS/CdTe solar cells with the absorber layer thicknesses from 2.6 microns to 0.3 microns were studied. The deposition process itself and all the post-deposition parameters such as the CdCl2 treatment, thickness of the Cu layer in the thermally evaporated Cu/Au back contact, and the back contact thermal activation/diffusion time for a given CdTe layer thickness were optimized to achieve the top performance for the cell of a given thickness. 13.5 % efficiency cells with 2.5 microns CdTe, 12% cells with 1 microns CdTe, 9.7% cells with 0.5 microns CdTe and 6.7% with 0.3 microns CdTe were fabricated.
