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Author: Antonio R. Alvarez
Publisher: Springer Science & Business Media
ISBN: 1475720297
Category : Technology & Engineering
Languages : en
Pages : 345
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Book Description
The topic of bipolar compatible CMOS (BiCMOS) is a fascinating one and of ever-growing practical importance. The "technology pendulum" has swung from the two extremes of preeminence of bipolar in the 1950s and 60s to the apparent endless horizons for VLSI NMOS technology during the 1970s and 80s. Yet starting in the 1980s severallimits were clouding the horizon for pure NMOS technology. CMOS reemerged as a· viable high density, high performance technology. Similarly by the mid 1980s scaled bipolar devices had not only demonstrated new high speed records, but early versions of mixed bipolar/CMOS technology were being produced. Hence the paradigm of either high density . Q[ high speed was metamorphasizing into an opportunity for both speed and density via a BiCMOS approach. Now as we approach the 1990s there have been a number of practical demonstrations of BiCMOS both for memory and logic applications and I expect the trend to escalate over the next decade. This book makes a timely contribution to the field of BiCMOS technology and circuit development. The evolution is now indeed rapid so that it is difficult to make such a book exhaustive of current developments. Probably equally difficult is the fact that the new technology opens a range of novel circuit opportunities that are as yet only formative in their development. Given these obstacles it is a herculean task to try to assemble a book on BiCMOS.
Author: Antonio R. Alvarez
Publisher: Springer Science & Business Media
ISBN: 1475720297
Category : Technology & Engineering
Languages : en
Pages : 345
Get Book
Book Description
The topic of bipolar compatible CMOS (BiCMOS) is a fascinating one and of ever-growing practical importance. The "technology pendulum" has swung from the two extremes of preeminence of bipolar in the 1950s and 60s to the apparent endless horizons for VLSI NMOS technology during the 1970s and 80s. Yet starting in the 1980s severallimits were clouding the horizon for pure NMOS technology. CMOS reemerged as a· viable high density, high performance technology. Similarly by the mid 1980s scaled bipolar devices had not only demonstrated new high speed records, but early versions of mixed bipolar/CMOS technology were being produced. Hence the paradigm of either high density . Q[ high speed was metamorphasizing into an opportunity for both speed and density via a BiCMOS approach. Now as we approach the 1990s there have been a number of practical demonstrations of BiCMOS both for memory and logic applications and I expect the trend to escalate over the next decade. This book makes a timely contribution to the field of BiCMOS technology and circuit development. The evolution is now indeed rapid so that it is difficult to make such a book exhaustive of current developments. Probably equally difficult is the fact that the new technology opens a range of novel circuit opportunities that are as yet only formative in their development. Given these obstacles it is a herculean task to try to assemble a book on BiCMOS.
Author: Antonio R. Alvarez
Publisher: Springer Science & Business Media
ISBN: 1461532183
Category : Technology & Engineering
Languages : en
Pages : 412
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Book Description
BiCMOS Technology and Applications, Second Edition provides a synthesis of available knowledge about the combination of bipolar and MOS transistors in a common integrated circuit - BiCMOS. In this new edition all chapters have been updated and completely new chapters on emerging topics have been added. In addition, BiCMOS Technology and Applications, Second Edition provides the reader with a knowledge of either CMOS or Bipolar technology/design a reference with which they can make educated decisions regarding the viability of BiCMOS in their own application. BiCMOS Technology and Applications, Second Edition is vital reading for practicing integrated circuit engineers as well as technical managers trying to evaluate business issues related to BiCMOS. As a textbook, this book is also appropriate at the graduate level for a special topics course in BiCMOS. A general knowledge in device physics, processing and circuit design is assumed. Given the division of the book, it lends itself well to a two-part course; one on technology and one on design. This will provide advanced students with a good understanding of tradeoffs between bipolar and MOS devices and circuits.
Author: Ikurō Masuda
Publisher: Routledge
ISBN:
Category : Computers
Languages : en
Pages : 114
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Book Description
Author: John D. Cressler
Publisher: CRC Press
ISBN: 1420066897
Category : Technology & Engineering
Languages : en
Pages : 258
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Book Description
SiGe HBT BiCMOS technology is the obvious groundbreaker of the Si heterostructures application space. To date virtually every major player in the communications electronics market either has SiGe up and running in-house or is using someone else’s SiGe fab as foundry for their designers. Key to this success lies in successful integration of the SiGe HBT and Si CMOS, with no loss of performance from either device. Filled with contributions from leading experts, Fabrication of SiGe HBT BiCMOS Technologies brings together a complete discussion of these topics into a single resource. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume examines the design, fabrication, and application of silicon heterostructure transistors. A novel aspect of this book the inclusion of numerous snapshot views of the industrial state-of-the-art for SiGe HBT BiCMOS technology. It has been carefully designed to provide a useful basis of comparison for the current status and future course of the global industry. In addition to the copious technical material and the numerous references contained in each chapter, the book includes easy-to-reference appendices on the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.
Author: Kiat Seng Yeo
Publisher: Prentice Hall
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 634
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Book Description
For upper level and graduate level Electrical and Computer Engineering courses in Integrated Circuit Design as well as professional circuit designers, engineers and researchers working in portable wireless communications hardware. This book presents the fundamentals of Complementary Metal Oxide Semiconductor (CMOS) and Bipolar compatible Complementary Metal Oxide Semiconductor (BiCMOS) technology, as well as the latest technological advances in the field. It discusses the concepts and techniques of new integrated circuit design for building high performance and low power circuits and systems for current and future very-large-scale-integration (VLSI) and giga-scale-integration (GSI) applications. CMOS/BiCMOS ULSI: Low-Voltage Low-Power is an essential resource for every professional moving toward lower voltage, lower power, and higher performance VLSI circuits and subsystems design.
Author: John D. Cressler
Publisher: CRC Press
ISBN: 1351834789
Category : Technology & Engineering
Languages : en
Pages : 321
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Book Description
SiGe HBT BiCMOS technology is the obvious groundbreaker of the Si heterostructures application space. To date virtually every major player in the communications electronics market either has SiGe up and running in-house or is using someone else’s SiGe fab as foundry for their designers. Key to this success lies in successful integration of the SiGe HBT and Si CMOS, with no loss of performance from either device. Filled with contributions from leading experts, Fabrication of SiGe HBT BiCMOS Technologies brings together a complete discussion of these topics into a single resource. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume examines the design, fabrication, and application of silicon heterostructure transistors. A novel aspect of this book the inclusion of numerous snapshot views of the industrial state-of-the-art for SiGe HBT BiCMOS technology. It has been carefully designed to provide a useful basis of comparison for the current status and future course of the global industry. In addition to the copious technical material and the numerous references contained in each chapter, the book includes easy-to-reference appendices on the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.
Author: Niccolò Rinaldi
Publisher: CRC Press
ISBN: 1000794407
Category : Technology & Engineering
Languages : en
Pages : 377
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Book Description
The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becomingan ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000’s.Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration.Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.
Author:
Publisher: The Electrochemical Society
ISBN: 9781566774604
Category : Microelectromechanical systems
Languages : en
Pages : 476
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Book Description
Author: Samir S. Rofail
Publisher: Prentice Hall
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 392
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Book Description
PLEASE PROVIDE COURSE INFORMATION PLEASE PROVIDE
Author: Peter Ashburn
Publisher: John Wiley & Sons
ISBN: 0470090731
Category : Technology & Engineering
Languages : en
Pages : 286
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Book Description
SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.
