Atomic Scale Characterization of Semiconductor Interfaces by Scanning Transmission Electron Microscopy PDF Download
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Author:
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Languages : en
Pages : 8
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Recently, the scanning transmission electron microscope has become capable of forming electron probes of atomic dimensions. Through the technique of Z-contrast imaging, it is now possible to form atomic resolution images with high compositional sensitivity from which atomic column positions can be directly determined. An incoherent image of this nature also allows atomic resolution chemical analysis to be performed, by locating the probe over particular columns or planes seen in the image while electron energy loss spectra are collected. These powerful techniques, combined with atomic-scale calculations, constitute a powerful probe of the structural, kinetic and thermodynamic properties of complex materials. The authors show the direct observation of As segregated to specific sites in a Si grain boundary, and present a candidate model for the structure of the Si/SiO2 interface.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 8
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Book Description
Recently, the scanning transmission electron microscope has become capable of forming electron probes of atomic dimensions. Through the technique of Z-contrast imaging, it is now possible to form atomic resolution images with high compositional sensitivity from which atomic column positions can be directly determined. An incoherent image of this nature also allows atomic resolution chemical analysis to be performed, by locating the probe over particular columns or planes seen in the image while electron energy loss spectra are collected. These powerful techniques, combined with atomic-scale calculations, constitute a powerful probe of the structural, kinetic and thermodynamic properties of complex materials. The authors show the direct observation of As segregated to specific sites in a Si grain boundary, and present a candidate model for the structure of the Si/SiO2 interface.
Author: Weronika Walkosz
Publisher: Springer Science & Business Media
ISBN: 1441978178
Category : Technology & Engineering
Languages : en
Pages : 114
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This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline β−Si3N4 and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF). These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications. The main contribution of this work is its detailed description of the bonding characteristics of light atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before. The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications.
Author: Weronika Walkosz
Publisher: Springer
ISBN: 9781441978165
Category : Technology & Engineering
Languages : en
Pages : 0
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Book Description
This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline β−Si3N4 and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF). These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications. The main contribution of this work is its detailed description of the bonding characteristics of light atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before. The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications.
Author: Lianfeng Fu
Publisher:
ISBN:
Category :
Languages : en
Pages : 382
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Author: Jeffery Andrew Aguiar
Publisher:
ISBN: 9781267656339
Category :
Languages : en
Pages :
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Coupling the development of emerging experimental techniques in STEM and EELS with a fundamental understanding of atomic electronic structure afforded by DFT represents the unique approach and intention of this thesis. Scanning transmission electron microscopes equipped with high-angle annular dark field (HAADF) detectors and Gatan image filters (GIF) provide images and spectra, where the image brightness is interpreted as a function of atomic mass and thickness, and elemental specific spectra provide a means for the exploration of electronic and chemical structure of materials at the angstrom size scale. Over the past 20 years, the application of EELS in STEM has enabled more accurate elemental identification and exploration of electronic and chemical structure on angstrom-length scales, and arguably has provided an unprecedented wealth of materials characterization compared to other available techniques. Many materials issues related to specific novel properties that cannot be analyzed using the traditional techniques of the past, however, still remain unanswered. These concepts require a married approach of experiment and theory to fully explain. The intent of this dissertation is the development of improved analysis techniques that derive quantitative atomic scale information in connection with unraveling the origins of materials properties linked to the electronic structure and chemistry of materials.
Author: Guy LeLay
Publisher: Springer Science & Business Media
ISBN: 3642729673
Category : Science
Languages : en
Pages : 399
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Book Description
The trend towards miniaturisation of microelectronic devices and the search for exotic new optoelectronic devices based on multilayers confer a crucial role on semiconductor interfaces. Great advances have recently been achieved in the elaboration of new thin film materials and in the characterization of their interfacial properties, down to the atomic scale, thanks to the development of sophisticated new techniques. This book is a collection of lectures that were given at the International Winter School on Semiconductor Interfaces: Formation and Properties held at the Centre de Physique des Rouches from 24 February to 6 March, 1987. The aim of this Winter School was to present a comprehensive review of this field, in particular of the materials and methods, and to formulate recom mendations for future research. The following topics are treated: (i) Interface formation. The key aspects of molecular beam epitaxy are emphasized, as well as the fabrication of artificially layered structures, strained layer superlattices and the tailoring of abrupt doping profiles. (ii) Fine characterization down to the atomic scale using recently devel oped, powerful techniques such as scanning tunneling microscopy, high reso lution transmission electron microscopy, glancing incidence x-ray diffraction, x-ray standing waves, surface extended x-ray absorption fine structure and surface extended energy-loss fine structure. (iii) Specific physical properties of the interfaces and their prospective applications in devices. We wish to thank warmly all the lecturers and participants, as well as the organizing committee, who made this Winter School a success.
Author: Guy Lelay
Publisher:
ISBN:
Category :
Languages : en
Pages : 408
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Book Description
The trend towards miniaturization of microelectronic devices and the search for exotic new optoelectronic devices based on multilayers confer a crucial role upon semiconductor interfaces. Great advances have recently been made in the production of new thin-film materials and in the characterization of their interfacial properties down to the atomic scale, thanks to the development of sophisticated new techniques. This book is a collection of lectures given by specialists at the International Winter School on "Semiconductor Interfaces: Formation and Properties," which was held at the Centre de Physique des Houches from 24 February to 6 March, 1987. The following topics are particularly emphasised: - Interface formation, including molecular beam epitaxy, the fabrication of artificially layered structures, strained layer superlattices and the tailoring of abrupt doping profiles. - Characterization down to the atomic scale using techniques such as STM, HRTEM, SEXAFS and SEELFS. - Specific physical properties of the interfaces and their prospective device applications.
Author: Laura Lazzarini
Publisher: Elsevier Inc. Chapters
ISBN: 0128083433
Category : Science
Languages : en
Pages : 78
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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 46
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This research in support of the Air Force Research Laboratory, Materials and Manufacturing Directorate was conducted at Wright-Patterson AFB, Ohio from 19 May 2003 through 18 May 2006. Transmission electron microscope (TEM) characterization studies were performed on a variety of novel III-V semiconductor heterostructures being developed for advanced optoelectronic device applications. A new approach is developed for true atomic scale compositional mapping of interfaces in mixed cation-anion III-V semiconductor heterostructures. This approach is applied for quantifying stoichiometry of interfaces in InAs/InGaSb superlattices. Detailed TEM studies were performed on short-period InAs/GaSb superlattices with periods ranging from 50A to 11A. Significant degradation in structural quality was observed with reduction in the superlattice period. Improvement in quality is however achieved by reducing the growth rate (specifically in the GaSb growth rate). The formation of heterojunction quantum dots (QD) composed of a combination of InAs and GaSb is demonstrated. The composite dot is achieved by first forming InAs QDs by normal self assembly process followed by growth of a GaSb crown atop the InAs QD structure. Transmission electron microscopy indicated a clear boundary between the GaSb and InAs regions with energy dispersive spectroscopy analysis showing an In rich core and a Sb rich cap.
Author: Joseph Houston Dycus
Publisher:
ISBN:
Category :
Languages : en
Pages : 183
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