Analysis and design of a new 24 GHZ active phase shifter, integrated in a BiCMOS SIGE

Analysis and design of a new 24 GHZ active phase shifter, integrated in a BiCMOS SIGE PDF Author: Bhanu Pratap Singh Jadav
Publisher:
ISBN:
Category :
Languages : fr
Pages : 134

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Book Description
Le travail présenté dans cette thèse consiste à développer un circuit intégré original dans le domaine des ondes millimétriques. Associé à un réseau d'antennes, ce dispositif permettra de réaliser de la formation de faisceaux (« beamforming »), c'est-à-dire qu'il permettra d'orienter et de contrôler le diagramme de rayonnement dans la direction désirée. Pour les ondes millimétriques, cette capacité à orienter le faisceau compense par son gain, les pertes dues à la montée en fréquence. Ce nouveau circuit assure un déphasage RF contrôlable entre l'entrée et la sortie. Il est réalisé à base d'un Oscillateur Contrôlé en Tension (OCT) «triple-push» verrouillé par l'injection d'un signal à 8 GHz. Dans ces conditions, la fréquence du signal de sortie est de 24 GHz. L'objectif de cette thèse a été de concevoir ce déphaseur RF actif, totalement intégré et implémenté avec la technologie BiCMOS SiGe:C 0,25 μm de NXP Semiconductors. Dans la première partie de ce travail, la conception de cette nouvelle architecture d'OCT différentiel «triple-push» à la fréquence de 24 GHz est présentée. Nous verrons que l'OCT «triple-push» est constitué de trois OCT différentiels couplés via des diodes varactors. Les résultats de simulations post-layout valident la méthodologie de conception avec un excellent niveau de réjection de la fréquence fondamentale et de la deuxième harmonique. Par la suite, une nouvelle architecture d'un déphaseur différentiel 120° accordable à la fréquence de 8 GHz est présentée. Ce déphaseur permet d'obtenir à partir d'un seul signal d'entrée, trois signaux de même amplitude et déphasés de 120° entre eux. Le circuit a été implémenté et les différents résultats de simulations post-layout obtenus ont été exposés. Enfin, le circuit global a été conçu et implémenté, en combinant le circuit déphaseur 120° et le circuit OCT «triple-push». Ce dernier est verrouillé par injection par le déphaseur 120°. Les résultats de simulations post-layout valident l'approche originale du système conçu et montrent une variation linéaire du déphasage dans tout le plan de phase. Ce déphaseur actif est destiné à être associé à une antenne élémentaire pour ensuite constituer un réseau antennaire complet qui pourra être utilisé pour la transmission de données, par exemple en technologie 5G.

Analysis and design of a new 24 GHZ active phase shifter, integrated in a BiCMOS SIGE

Analysis and design of a new 24 GHZ active phase shifter, integrated in a BiCMOS SIGE PDF Author: Bhanu Pratap Singh Jadav
Publisher:
ISBN:
Category :
Languages : fr
Pages : 134

Get Book Here

Book Description
Le travail présenté dans cette thèse consiste à développer un circuit intégré original dans le domaine des ondes millimétriques. Associé à un réseau d'antennes, ce dispositif permettra de réaliser de la formation de faisceaux (« beamforming »), c'est-à-dire qu'il permettra d'orienter et de contrôler le diagramme de rayonnement dans la direction désirée. Pour les ondes millimétriques, cette capacité à orienter le faisceau compense par son gain, les pertes dues à la montée en fréquence. Ce nouveau circuit assure un déphasage RF contrôlable entre l'entrée et la sortie. Il est réalisé à base d'un Oscillateur Contrôlé en Tension (OCT) «triple-push» verrouillé par l'injection d'un signal à 8 GHz. Dans ces conditions, la fréquence du signal de sortie est de 24 GHz. L'objectif de cette thèse a été de concevoir ce déphaseur RF actif, totalement intégré et implémenté avec la technologie BiCMOS SiGe:C 0,25 μm de NXP Semiconductors. Dans la première partie de ce travail, la conception de cette nouvelle architecture d'OCT différentiel «triple-push» à la fréquence de 24 GHz est présentée. Nous verrons que l'OCT «triple-push» est constitué de trois OCT différentiels couplés via des diodes varactors. Les résultats de simulations post-layout valident la méthodologie de conception avec un excellent niveau de réjection de la fréquence fondamentale et de la deuxième harmonique. Par la suite, une nouvelle architecture d'un déphaseur différentiel 120° accordable à la fréquence de 8 GHz est présentée. Ce déphaseur permet d'obtenir à partir d'un seul signal d'entrée, trois signaux de même amplitude et déphasés de 120° entre eux. Le circuit a été implémenté et les différents résultats de simulations post-layout obtenus ont été exposés. Enfin, le circuit global a été conçu et implémenté, en combinant le circuit déphaseur 120° et le circuit OCT «triple-push». Ce dernier est verrouillé par injection par le déphaseur 120°. Les résultats de simulations post-layout valident l'approche originale du système conçu et montrent une variation linéaire du déphasage dans tout le plan de phase. Ce déphaseur actif est destiné à être associé à une antenne élémentaire pour ensuite constituer un réseau antennaire complet qui pourra être utilisé pour la transmission de données, par exemple en technologie 5G.

Millimeter-Wave Antennas: Configurations and Applications

Millimeter-Wave Antennas: Configurations and Applications PDF Author: Jaco du Preez
Publisher: Springer
ISBN: 3319350684
Category : Technology & Engineering
Languages : en
Pages : 165

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Book Description
This book comprehensively reviews the state of the art in millimeter-wave antennas, traces important recent developments and provides information on a wide range of antenna configurations and applications. While fundamental theoretical aspects are discussed whenever necessary, the book primarily focuses on design principles and concepts, manufacture, measurement techniques, and practical results. Each of the various antenna types scalable to millimeter-wave dimensions is considered individually, with coverage of leaky-wave and surface-wave antennas, printed antennas, integrated antennas, and reflector and lens systems. The final two chapters address the subject from a systems perspective, providing an overview of supporting circuitry and examining in detail diverse millimeter-wave applications, including high-speed wireless communications, radio astronomy, and radar. The vast amount of information now available on millimeter-wave systems can be daunting for researchers and designers entering the field. This book offers readers essential guidance, helping them to gain a thorough understanding based on the most recent research findings and serving as a sound basis for informed decision-making.

Development of Monolithic SiGe and Packaged RF MEMS High-linearity Five-bit High-low Pass Phase Shifters for SoC X-band T/R Modules

Development of Monolithic SiGe and Packaged RF MEMS High-linearity Five-bit High-low Pass Phase Shifters for SoC X-band T/R Modules PDF Author: Matthew A. Morton
Publisher:
ISBN:
Category : Error analysis (Mathematics)
Languages : en
Pages :

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Book Description
A comprehensive study of the High-pass/Low-pass topology has been performed, increasing the understanding of error sources arising from bit layout issues and fabrication tolerances. This included a detailed analysis of error sources in monolithic microwave phase shifters due to device size limitations, inductor parasitics, loading effects, and non-ideal switches. Each component utilized in the implementation of a monolithic high-low pass phase shifter was analyzed, with its influence on phase behavior shown in detail. An emphasis was placed on the net impact on absolute phase variation, which is critical to the system performance of a phased array radar system. The design of the individual phase shifter filter sections, and the influence of bit ordering on overall performance was also addressed. A variety of X-band four- and five-bit phase shifters were fabricated in a 200 GHz SiGe HBT BiCMOS technology platform, and further served to validate the analysis and design methodology. The SiGe phase shifter can be successfully incorporated into a single-chip T/R module forming a system-on-a-chip (SoC). Reduction in the physical size of transmission lines was shown to be a possibility with spinel magnetic nanoparticle films. The signal transmission properties of phase lines treated with nanoparticle thin films were examined, showing the potential for significant size reduction in both delay line and High-pass/Low-pass phase topologies. Wide-band, low-loss, and near-hermetic packaging techniques for RF MEMS devices were presented. A thermal compression bonding technique compatible with standard IC fabrication techniques was shown, that uses a low temperature thermal compression bonding method that avoids plastic deformations of the MEMS membrane. Ultimately, a system-on-a-package (SoP) approach was demonstrated that utilized packaged RF MEMS switches to maintain the performance of the SiGe phase shifter with much lower loss. The extremely competitive performance of the MEMS-based High-pass/Low-pass phase shifter, despite the lack of the extensive toolkits and commercial fabrication facilities employed with the active-based SiGe phase shifters, confirms both the effectiveness of the detailed phase error analysis presented in this work and the robust nature of the High-pass/Low-pass topology.

Analysis and Design of W-band Phase Shifters

Analysis and Design of W-band Phase Shifters PDF Author: Ioannis Sarkas
Publisher:
ISBN: 9780494729410
Category :
Languages : en
Pages : 154

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Book Description
This thesis describes 80--94 GHz and 70--77GHz interpolating phase shifters and the corresponding transmitter and receiver ICs, fabricated in 65-nm CMOS and SiGe BiCMOS technologies, respectively. Lumped inductors and transformers are employed to realize small-form factor 90° hybrids as needed in high density phased arrays. The CMOS transmitter exhibits absolute phase and amplitude errors of 4° and 4dB, respectively, at 90GHz, when the phase is varied from 0° to 360° in steps of 22.5°. The absolute phase error in the SiGe BiCMOS receiver is less than 5., with a maximum gain imbalance below 3dB at 74GHz. The peak gain and power consumption are 3.8dB and 142mW from 1.2V supply for the CMOS transmitter, and 17dB and 128mW from 1.5V and 2.5V supplies for the SiGe BiCMOS receiver.

Analysis and Design of SiGe BiCMOS Integrated Circuits for Commercial Maritime Phased Array Radar Systems

Analysis and Design of SiGe BiCMOS Integrated Circuits for Commercial Maritime Phased Array Radar Systems PDF Author: Holger Erkens
Publisher:
ISBN: 9783868536409
Category :
Languages : de
Pages : 188

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Book Description


Design of Fully Integrated 60GHz OFDM Transmitter

Design of Fully Integrated 60GHz OFDM Transmitter PDF Author: Srdjan Glisic
Publisher: Sudwestdeutscher Verlag Fur Hochschulschriften AG
ISBN: 9783838129174
Category :
Languages : de
Pages : 180

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Book Description
The book is a dissertation entitled "Design of Fully Integrated 60 GHz OFDM Transmitter in SiGe BiCMOS Technology." It presents transmitter design for wireless communication in the ISM band at 60 GHz for speeds of several Gbit/s. It is focused on design of transmitter components, which are critical for the performance of the whole analog front-end. Phase-locked loop phase noise optimization is presented. A new optimized recipe for calculating phase-locked loop parameters of a forth order PLL is presented, resulting in the spurious sideband reduction by up to 10 dB. The design of integrated image-rejection filters with low quality factor of the integrated resonators is presented. The challenges related to the design of mm-wave power amplifiers with high P1dB are analyzed and the procedure of the PA design is presented. The fully integrated transmitter was used for data transmission with data rate of 3.6 Gbit/s (with coding 4.8 Gbit/s) over 15 meters. This is the best result in the class of 60 GHz analog front-ends without beamforming.

Signal Processing and Analysis of Electrical Circuit

Signal Processing and Analysis of Electrical Circuit PDF Author: Adam Glowacz
Publisher: MDPI
ISBN: 3039282948
Category : Technology & Engineering
Languages : en
Pages : 604

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Book Description
This Special Issue with 35 published articles shows the significance of the topic “Signal Processing and Analysis of Electrical Circuit”. This topic has been gaining increasing attention in recent times. The presented articles can be categorized into four different areas: signal processing and analysis methods of electrical circuits; electrical measurement technology; applications of signal processing of electrical equipment; fault diagnosis of electrical circuits. It is a fact that the development of electrical systems, signal processing methods, and circuits has been accelerating. Electronics applications related to electrical circuits and signal processing methods have gained noticeable attention in recent times. The methods of signal processing and electrical circuits are widely used by engineers and scientists all over the world. The constituent papers represent a significant contribution to electronics and present applications that can be used in industry. Further improvements to the presented approaches are required for realizing their full potential.

Batteryless mm-Wave Wireless Sensors

Batteryless mm-Wave Wireless Sensors PDF Author: Hao Gao
Publisher: Springer
ISBN: 3319729802
Category : Technology & Engineering
Languages : en
Pages : 145

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Book Description
This book describes the PREMISS system, which enables readers to overcome the limitations of state-of-the-art battery-less wireless sensors in size, cost, robustness and range, with a system concept for a 60 GHz wireless sensor system with monolithic sensors. The authors demonstrate a system in which the wireless sensors consist of wireless power receiving, sensing and communication functions in a single chip, without external components, avoiding costly IC-interfaces that are sensitive to mechanical and thermal stress.

Design of Fully Integrated 60 GHz OFDM Transmitter in SiGe BiCMOS Technology

Design of Fully Integrated 60 GHz OFDM Transmitter in SiGe BiCMOS Technology PDF Author: Srđan Glišić
Publisher:
ISBN:
Category :
Languages : en
Pages : 0

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Book Description


Fully Integrated Cmos Phase Shifter/vco for Mimo/ism Application

Fully Integrated Cmos Phase Shifter/vco for Mimo/ism Application PDF Author: Ahmad Reza Tavakoli Hosseinabadi
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Book Description
A fully integrated CMOS 0 0́3 900 phase shifter in 0.18um TSMC technology is presented. With the increasing use of wireless systems in GHz range, there is high demand for integrated phase shifters in phased arrays and MIMO on chip systems. Integrated phase shifters have quite a high number of integrated inductors which consume a lot of area and introduce a huge amount of loss which make them impractical for on chip applications. Also tuning the phase shift is another concern which seems difficult with use of passive elements for integrated applications. This work is presents a new method for implementing phase shifters using only active CMOS elements which dramatically reduce the occupied area and make the tuning feasible. Also a fully integrated millimeter-wave VCO is implemented using the same technology. This VCO can be part of a 24 GHz frequency synthesizer for 24 GHz ISM band transceivers. The 24 GHz ISM band is the unlicensed band and available for commercial communication and automotive radar use, which is becoming attractive for high bandwidth data rate.