An Analytical Model for AlGaN/GaN HEMT with Polarization Effects for High Power Applications PDF Download
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Author: Guangpu Liu (Graduate student)
Publisher:
ISBN:
Category :
Languages : en
Pages : 63
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Book Description
The main goal of the grad thesis is to develop a physics based analytical model for AlGaN/GaN modulation-doped field effect transistor (MODFET) to study the I-V characteristics, current transfer characteristics, transconductance and drain-conductance. The linear and non-linear of the drain current have been separately calculate and merged them in order to evaluate the I-V characteristics. The method of evaluation of drain current gives high degree accuracy up to Nano-scaled devices. The threshold voltage has been evaluated from current transfer characteristics plot and verified from the transconductance parameter. The large value of transconductance has been obtained for the specific layer thickness of AlGaN and GaN space layer. The drain-conductance has been evaluated to understand the power performance. The graduate thesis incorporates the introduction of the research work in chapter one, gallium nitride material is in chapter two, AlGaN/GaN HEMT polarization effects analysis in chapter three, numerical calculation in chapter four and result discussion in chapter five.
Author: Guangpu Liu (Graduate student)
Publisher:
ISBN:
Category :
Languages : en
Pages : 63
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Book Description
The main goal of the grad thesis is to develop a physics based analytical model for AlGaN/GaN modulation-doped field effect transistor (MODFET) to study the I-V characteristics, current transfer characteristics, transconductance and drain-conductance. The linear and non-linear of the drain current have been separately calculate and merged them in order to evaluate the I-V characteristics. The method of evaluation of drain current gives high degree accuracy up to Nano-scaled devices. The threshold voltage has been evaluated from current transfer characteristics plot and verified from the transconductance parameter. The large value of transconductance has been obtained for the specific layer thickness of AlGaN and GaN space layer. The drain-conductance has been evaluated to understand the power performance. The graduate thesis incorporates the introduction of the research work in chapter one, gallium nitride material is in chapter two, AlGaN/GaN HEMT polarization effects analysis in chapter three, numerical calculation in chapter four and result discussion in chapter five.
Author: Swaroop Jallipeta
Publisher:
ISBN:
Category :
Languages : en
Pages : 42
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Book Description
The main objective of this graduate project is to develop an analytical model of AlGaN/GaN high electron mobility transistor (HEMT) device for studying the sheet carrier density in the quantum well and cut-off frequency. This analytical model has been developed by using Matlab. The sheet carrier density in the triangular quantum well has been evaluated by the influence of layer thickness of the doped AlGaN and AlN spacer layer as well as the gate-source biasing to understand the quality of heterojunction and carrier transport. The cut-off frequency has been computed to study the effect of channel length on RF performance of the device. The graduate project constitutes the introduction of the project in Chapter 1, Gallium Nitride material in Chapter 2, HEMT material in Chapter 3, Theory and model in Chapter 4 and results and discussions in Chapter 5.
Author:
Publisher: Allied Publishers
ISBN: 9788177640151
Category : Soft computing
Languages : en
Pages : 678
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Book Description
Author: D. Nirmal
Publisher: CRC Press
ISBN: 0429862539
Category : Science
Languages : en
Pages : 430
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Book Description
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Author: D. Nirmal
Publisher: CRC Press
ISBN: 0429862520
Category : Science
Languages : en
Pages : 434
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Book Description
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Author: Amal Banerjee
Publisher: Springer Nature
ISBN: 3031457501
Category : Technology & Engineering
Languages : en
Pages : 305
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Book Description
This book examines in detail how a semiconductor device is designed and fabricated to satisfy best the requirements of the target application. The author presents and explains both basic and state-of-art semiconductor industry standards used in large/small signal equivalent circuit models for semiconductor devices that electronics engineers routinely use in their design calculations. The presentation includes detailed, step-by-step information on how a semiconductor device is fabricated, and the very sophisticated supporting technologies used in the process flow. The author also explains how standard laboratory equipment can be used to extract useful performance metrics of a semiconductor device.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Author: Trupti Ranjan Lenka
Publisher: Springer Nature
ISBN: 9811921652
Category : Technology & Engineering
Languages : en
Pages : 246
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Book Description
This book covers two broad domains: state-of-the-art research in GaN HEMT and Ga2O3 HEMT. Each technology covers materials system, band engineering, modeling and simulations, fabrication techniques, and emerging applications. The book presents basic operation principles of HEMT, types of HEMT structures, and semiconductor device physics to understand the device behavior. The book presents numerical modeling of the device and TCAD simulations for high-frequency and high-power applications. The chapters include device characteristics of HEMT including 2DEG density, Id-Vgs, Id-Vds, transconductance, linearity, and C-V. The book emphasizes the state-of-the-art fabrication techniques of HEMT and circuit design for various applications in low noise amplifier, oscillator, power electronics, and biosensor applications. The book focuses on HEMT applications to meet the ever-increasing demands of the industry, innovation in terms of materials, design, modeling, simulation, processes, and circuits. The book will be primarily helpful to undergraduate/postgraduate, researchers, and practitioners in their research.
Author: Debdeep Jena
Publisher: Springer Science & Business Media
ISBN: 0387368310
Category : Science
Languages : en
Pages : 523
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Book Description
Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications presents the latest understanding of the solid state physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of wurtzite compound semiconductors, and associated piezo-electric effects in strained thin film heterostructures. These heterostructures are used in wide band gap semiconductor based sensors, in addition to various electronic and opto-electronic semiconductor devices. The book covers the ab initio theory of polarization in cubic and hexagonal semiconductors, growth of thin film GaN, GaN/AlGaN GaAlN/ AlGaInN, and other nitrides, and SiC heterostructures. It discusses the effects of spontaneous and piezoelectric polarization on band diagrams and electronic properties of abrupt and compositionally graded heterostructures, electronic characterization of polarization-induced charge distributions by scanning-probe spectroscopies, and gauge factors and strain effects. In addition, polarization in extended defects, piezo-electric strain/charge engineering, and application to device design and processing are covered. The effects of polarization on the fundamental electron transport properties, and on the basic optical transitions are described. The crucial role of polarization in devices such as high electron mobility transistors (HEMTs) and light-emitting diodes (LEDs) is covered. The chapters are authored by professors and researchers in the fields of physics, applied physics and electrical engineering, who worked for 5 years under the "Polarization Effects in Semiconductors" DOD funded Multi Disciplinary University Research Initiative. This book will be of interest to graduate students and researchers working in the field of wide-bandgap semiconductor physics and their device applications. It will also be useful for practicing engineers in the field of wide-bandgap semiconductor device research and development.
Author: Anuj Singal
Publisher: CRC Press
ISBN: 1000645347
Category : Technology & Engineering
Languages : en
Pages : 343
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Book Description
This reference text discusses advances in wireless communication, design challenges, and future research directions to design reliable wireless communication. The text discusses emerging technologies including wireless sensor networks, Internet of Things (IoT), cloud computing, mm-Wave, Massive MIMO, cognitive radios (CR), visible light communication (VLC), wireless optical communication, signal processing, and channel modeling. The text covers artificial intelligence-based applications in wireless communication, machine learning techniques and challenges in wireless sensor networks, and deep learning for channel and bandwidth estimation during optical wireless communication. The text will be useful for senior undergraduate, graduate students, and professionals in the fields of electrical engineering, and electronics and communication engineering.
