Author: James M. Sattler
Publisher:
ISBN: 9781423516590
Category :
Languages : en
Pages : 143
Book Description
The effects of radiation on AlxGa1-xN/GaN MODFETs is an area of increasing interest to the USAF as these devices become developed and integrated in satellite-based systems Irradiation is also a valuable tool for analyzing the quantum-level characteristics and properties that are responsible for device operation AlxGa1-xN/GaN MODFETs were fabricated and irradiated at liquid nitrogen temperatures by 0,45-1,2MeV electrons up to doses of 6*10(exp 16) e/ cm2. Following irradiation, low temperature I-V measurements were recorded providing dose-dependent measurements Temperature-dependent I-V measurements were also made during room temperature annealing following irradiation I-V measurements indicate radiation-induced changes occur in these devices creating increased gate and drain currents These increased currents are only maintained at low temperatures (T
An Analysis of the Effects of Low Energy Electron Radiation of Al(sub X) Ga(sub 1-x)N/GaN Modulation-Doped Field-Effect Transistors
An Analysis of the Effects of Low Energy Electron Radiation on AlxGa1-xN/GaN Modulation-doped Field-effect Transistors
Author: James M. Sattler (2LT, USAF.)
Publisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 240
Book Description
Publisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 240
Book Description
Capacitance-voltage Study on the Effects of Low Energy Electron Radiation on Al(0.27)Ga(0.73)N/GaN High Electron Mobility Transistors
Author: Thomas D. Jarzen
Publisher:
ISBN:
Category : Electron mobility
Languages : en
Pages : 242
Book Description
Publisher:
ISBN:
Category : Electron mobility
Languages : en
Pages : 242
Book Description
Modulation Doped Al(x)Ga(1-x)As/GaAs Heterojunction Field Effect Transistor
Author: Kwyro Lee
Publisher:
ISBN:
Category :
Languages : en
Pages : 378
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 378
Book Description
Design and Performance of Modulation-doped Field Effect Transistors
Author: Steven Lawrence Yellen
Publisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 232
Book Description
Publisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 232
Book Description
The Effects of Temperature and Electron Radiation on the Electrical Properties of A1GaN/GaN Heterostructure Field Effect Transistors
Author: Jeffrey T. Moran
Publisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 104
Book Description
Publisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 104
Book Description
Temperature Dependent Current-voltage Measurements of Neutron Irradiated A10.27Ga0.73N/GaN Modulation Doped Field Effect Transistors
Author: Troy A. Uhlman
Publisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 340
Book Description
Publisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 340
Book Description
Characterization of Modulation-doped Field-effect Transistors with Gate Lengths Down to 600 Angstroms
Author: Paul Raymond De la Houssaye
Publisher:
ISBN:
Category : Modulation-doped field-effect transistors
Languages : en
Pages : 310
Book Description
Publisher:
ISBN:
Category : Modulation-doped field-effect transistors
Languages : en
Pages : 310
Book Description
Modulation-doped Field-effect Transistors
Author: Heinrich Daembkes
Publisher: Institute of Electrical & Electronics Engineers(IEEE)
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 544
Book Description
Publisher: Institute of Electrical & Electronics Engineers(IEEE)
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 544
Book Description
Modulation-doped Field-effect Transistors
Author: Heinrich Daembkes
Publisher: Institute of Electrical & Electronics Engineers(IEEE)
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 484
Book Description
Publisher: Institute of Electrical & Electronics Engineers(IEEE)
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 484
Book Description