Amorphous and Crystalline Silicon Carbide II PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Amorphous and Crystalline Silicon Carbide II PDF full book. Access full book title Amorphous and Crystalline Silicon Carbide II by Mahmud M. Rahman. Download full books in PDF and EPUB format.
Author: Mahmud M. Rahman
Publisher: Springer Science & Business Media
ISBN: 3642750486
Category : Science
Languages : en
Pages : 238
Get Book Here
Book Description
This volume contains written versions of the papers presented at the Second Inter national Conference on Amorphous and Crystalline Silicon Carbide and Related Materials (ICACSC 1988), which was held at Santa Clara University on Decem ber 15 and 16, 1988. The conference followed the First ICACSC held at Howard University, Washington DC, in December 1987 and continued to provide an in ternational forum for discussion and exchange of ideas and results covering the current status of research on SiC and related materials. ICACSC 1988 attracted 105 participants from five countries. The substantial increase in the number of papers compared with the previous year is an indication of the growing interest in this field. Of the 45 papers presented at the conference, 36 refereed manuscripts are included in this volume, while the remaining 9 appear as abstracts. The six invited papers provide detailed reviews of recent results on amorphous and crystalline silicon carbide materials and devices, as well as diamond thin films. The volume is divided into six parts, each covering an important theme of the conference.
Author: Mahmud M. Rahman
Publisher: Springer Science & Business Media
ISBN: 3642750486
Category : Science
Languages : en
Pages : 238
Get Book Here
Book Description
This volume contains written versions of the papers presented at the Second Inter national Conference on Amorphous and Crystalline Silicon Carbide and Related Materials (ICACSC 1988), which was held at Santa Clara University on Decem ber 15 and 16, 1988. The conference followed the First ICACSC held at Howard University, Washington DC, in December 1987 and continued to provide an in ternational forum for discussion and exchange of ideas and results covering the current status of research on SiC and related materials. ICACSC 1988 attracted 105 participants from five countries. The substantial increase in the number of papers compared with the previous year is an indication of the growing interest in this field. Of the 45 papers presented at the conference, 36 refereed manuscripts are included in this volume, while the remaining 9 appear as abstracts. The six invited papers provide detailed reviews of recent results on amorphous and crystalline silicon carbide materials and devices, as well as diamond thin films. The volume is divided into six parts, each covering an important theme of the conference.
Author: Mahmud M Rahman
Publisher:
ISBN: 9783642750496
Category :
Languages : en
Pages : 248
Get Book Here
Book Description
Author: Cary Y. Yang
Publisher: Springer Science & Business Media
ISBN: 3642848044
Category : Science
Languages : en
Pages : 439
Get Book Here
Book Description
Silicon carbide and other group IV-IV materials in their amorphous, microcrystalline, and crystalline forms have a wide variety of applications.The contributions to this volume report recent developments and trends in the field. The purpose is to make available the current state of understanding of the materials and their potential applications. Eachcontribution focuses on a particular topic, such as preparation methods, characterization, and models explaining experimental findings. The volume also contains the latest results in the exciting field of SiGe/Si heterojunction bipolar transistors. The reader will find this book valuable as a reference source, an up-to-date and in-depth overview of this field, and, most importantly, as a window into the immense range of reading potential applications of silicon carbide. It is essential for scientists, engineers and students interested in electronic materials, high-speed heterojunction devices, and high-temperature optoelectronics.
Author: Cary Y. Yang
Publisher: Springer
ISBN: 9783642848063
Category : Science
Languages : en
Pages : 0
Get Book Here
Book Description
Silicon carbide and other group IV-IV materials in their amorphous, microcrystalline, and crystalline forms have a wide variety of applications.The contributions to this volume report recent developments and trends in the field. The purpose is to make available the current state of understanding of the materials and their potential applications. Eachcontribution focuses on a particular topic, such as preparation methods, characterization, and models explaining experimental findings. The volume also contains the latest results in the exciting field of SiGe/Si heterojunction bipolar transistors. The reader will find this book valuable as a reference source, an up-to-date and in-depth overview of this field, and, most importantly, as a window into the immense range of reading potential applications of silicon carbide. It is essential for scientists, engineers and students interested in electronic materials, high-speed heterojunction devices, and high-temperature optoelectronics.
Author:
Publisher: Academic Press
ISBN: 0080864503
Category : Technology & Engineering
Languages : en
Pages : 435
Get Book Here
Book Description
This volume addresses the subject of materials science, specifically the materials aspects, device applications, and fabricating technology of SiC.
Author: Sadao Adachi
Publisher: Springer Science & Business Media
ISBN: 1461552478
Category : Technology & Engineering
Languages : en
Pages : 725
Get Book Here
Book Description
Knowledge of the refractive indices and absorption coefficients of semiconductors is especially import in the design and analysis of optical and optoelectronic devices. The determination of the optical constants of semiconductors at energies beyond the fundamental absorption edge is also known to be a powerful way of studying the electronic energy-band structures of the semiconductors. The purpose of this book is to give tabulated values and graphical information on the optical constants of the most popular semiconductors over the entire spectral range. This book presents data on the optical constants of crystalline and amorphous semiconductors. A complete set of the optical constants are presented in this book. They are: the complex dielectric constant (E=e.+ieJ, complex refractive index (n*=n+ik), absorption coefficient (a.), and normal-incidence reflectivity (R). The semiconductor materials considered in this book are the group-IV elemental and binary, llI-V, IT-VI, IV-VI binary semiconductors, and their alloys. The reader will fmd the companion book "Optical Properties of Crystalline and Amorphous Semiconductors: Materials and Fundamental Principles" useful since it emphasizes the basic material properties and fundamental prinCiples.
Author: Peter Friedrichs
Publisher: John Wiley & Sons
ISBN: 9783527629084
Category : Science
Languages : en
Pages : 520
Get Book Here
Book Description
Silicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. High thermal conductivity, high electric field breakdown strength and high maximum current density make it most promising for high-powered semiconductor devices. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. This volume is devoted to high power devices products and their challenges in industrial application. Readers will benefit from reports on development and reliability aspects of Schottky barrier diodes, advantages of SiC power MOSFETs, or SiC sensors. The authors discuss MEMS and NEMS as SiC-based electronics for automotive industry as well as SiC-based circuit elements for high temperature applications, and the application of transistors in PV-inverters. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development. Among the former are CREE Inc. and Fraunhofer ISE, while the industry is represented by Toshiba, Nissan, Infineon, NASA, Naval Research Lab, and Rensselaer Polytechnic Institute, to name but a few.
Author: D.P. Landau
Publisher: Springer Science & Business Media
ISBN: 3642565778
Category : Science
Languages : en
Pages : 238
Get Book Here
Book Description
Almost fifteen years ago, because of the phenomenal growth in the power of computer simulations, The University of Georgia formed the first institu tional unit devoted to the use of simulations in research and teaching: The Center for Simulational Physics. As the international simulations community expanded further, we sensed a need for a meeting place for both experi enced simulators and neophytes to discuss new techniques and recent results in an environment which promoted extended discussion. As a consequence, the Center for Simulational Physics established an annual workshop on Re cent Developments in Computer Simulation Studies in Condensed Matter Physics. This year's workshop was the thirteenth in this series, and the con tinued interest shown by the scientific community demonstrates quite clearly the useful purpose that these meetings have served. The latest workshop was held at The University of Georgia, February 21-25, 2000, and these proceed ings provide a "status report" on a number of important topics. This volume is published with the goal of timely dissemination of the material to a wider audience. We wish to offer a special thanks to the IBM Corporation for its generous support of this year's workshop. We also acknowledge the Donors of the Petroleum Research Fund, administered by the American Chemical Society, and the National Science Foundation for partial support. This volume contains both invited papers and contributed presentations on problems in both classical and quantum condensed matter physics.
Author: D. P. Landau
Publisher: Springer Science & Business Media
ISBN: 3642596894
Category : Science
Languages : en
Pages : 238
Get Book Here
Book Description
More than a decade ago, because of the phenomenal growth in the power of computer simulations, The University of Georgia formed the first institutional unit devoted to the use of simulations in research and teaching: The Center for Simulational Physics. As the simulations community expanded further, we sensed a need for a meeting place for both experienced simulators and neophytes to discuss new techniques and recent results in an environment which promoted extended discussion. As a consequence, the Center for Sim ulational Physics established an annual workshop on Recent Developments in Computer Simulation Studies in Condensed Matter Physics. This year's workshop was the twelfth in this series. It was held at The University of Geor gia, March 8-12, 1999 as an unofficial satellite conference to the Centennial Meeting of the American Physical Society in Atlanta, GA. The continued interest shown by the scientific community demonstrates quite clearly the useful purpose which the series has served. These proceedings provide a "sta tus report" on a number of important topics. This volume is published with the goal of timely dissemination of the material to a wider audience. We wish to offer special thanks to IBM Corporation for their generous support of this year's workshop. This volume contains both invited papers and contributed presentations on problems in both classical and quantum condensed matter physics. We hope that each reader will benefit from specialized results as well as profit from exposure to new algorithms, methods of analysis, and conceptual devel opments.
Author: David P. Landau
Publisher: Springer Science & Business Media
ISBN: 3642468519
Category : Science
Languages : en
Pages : 274
Get Book Here
Book Description
Computer Simulation Studies in Condensed-Matter Physics X is devoted to Prof. Masuo Suzuki's ideas, which have made novel, new simulations possible. These proceedings, of the 1997 workshop, comprise three parts that deal with new algorithms, methods of analysis, and conceptual developments. The first part contains invited papers that deal with simulational studies of classical systems. The second of the proceedings is devoted to invited papers on quantum systems, including new results for strongly correlated electron and quantum spin models. The final part contains a large number of contributed presentations.
