Advanced Transmission Electron Microscopy Studies of III-V Semiconductor Nanostructures PDF Download
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Author: Chun Maw Tey
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Author: Chun Maw Tey
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Author: Jian Min Zuo
Publisher: Springer
ISBN: 1493966073
Category : Technology & Engineering
Languages : en
Pages : 741
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Book Description
This volume expands and updates the coverage in the authors' popular 1992 book, Electron Microdiffraction. As the title implies, the focus of the book has changed from electron microdiffraction and convergent beam electron diffraction to all forms of advanced transmission electron microscopy. Special attention is given to electron diffraction and imaging, including high-resolution TEM and STEM imaging, and the application of these methods to crystals, their defects, and nanostructures. The authoritative text summarizes and develops most of the useful knowledge which has been gained over the years from the study of the multiple electron scattering problem, the recent development of aberration correctors and their applications to materials structure characterization, as well as the authors' extensive teaching experience in these areas. Advanced Transmission Electron Microscopy: Imaging and Diffraction in Nanoscience is ideal for use as an advanced undergraduate or graduate level text in support of course materials in Materials Science, Physics or Chemistry departments.
Author: Andreas Rosenauer
Publisher: Springer
ISBN: 3540364072
Category : Science
Languages : en
Pages : 238
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Book Description
This book provides tools well suited for the quantitative investigation of semiconductor electron microscopy. These tools allow for the accurate determination of the composition of ternary semiconductor nanostructures with a spatial resolution at near atomic scales. The book focuses on new methods including strain state analysis as well as evaluation of the composition via the lattice fringe analysis (CELFA) technique. The basics of these procedures as well as their advantages, drawbacks and sources of error are all discussed. The techniques are applied to quantum wells and dots in order to give insight into kinetic growth effects such as segregation and migration. In the first part of the book the fundamentals of transmission electron microscopy are provided. These are needed for an understanding of the digital image analysis techniques described in the second part of the book. There the reader will find information on different methods of composition determination. The third part of the book focuses on applications such as composition determination in InGaAs Stranski--Krastanov quantum dots. Finally it is shown how an improvement in the precision of the composition evaluation can be obtained by combining CELFA with electron holography. This is demonstrated for an AlAs/GaAs superlattice.
Author: Andreas Rosenauer
Publisher:
ISBN: 9783662146170
Category :
Languages : en
Pages : 256
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Book Description
Author: Francis Leonard Deepak
Publisher: Springer
ISBN: 3319151770
Category : Technology & Engineering
Languages : en
Pages : 281
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Book Description
This book highlights the current understanding of materials in the context of new and continuously emerging techniques in the field of electron microscopy. The authors present applications of electron microscopic techniques in characterizing various well-known & new nanomaterials. The applications described include both inorganic nanomaterials as well as organic nanomaterials.
Author: Alina Bruma
Publisher: CRC Press
ISBN: 0429512732
Category : Computers
Languages : en
Pages : 164
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Book Description
Scanning Transmission Electron Microscopy is focused on discussing the latest approaches in the recording of high-fidelity quantitative annular dark-field (ADF) data. It showcases the application of machine learning in electron microscopy and the latest advancements in image processing and data interpretation for materials notoriously difficult to analyze using scanning transmission electron microscopy (STEM). It also highlights strategies to record and interpret large electron diffraction datasets for the analysis of nanostructures. This book: Discusses existing approaches for experimental design in the recording of high-fidelity quantitative ADF data Presents the most common types of scintillator-photomultiplier ADF detectors, along with their strengths and weaknesses. Proposes strategies to minimize the introduction of errors from these detectors and avenues for dealing with residual errors Discusses the practice of reliable multiframe imaging, along with the benefits and new experimental opportunities it presents in electron dose or dose-rate management Focuses on supervised and unsupervised machine learning for electron microscopy Discusses open data formats, community-driven software, and data repositories Proposes methods to process information at both global and local scales, and discusses avenues to improve the storage, transfer, analysis, and interpretation of multidimensional datasets Provides the spectrum of possibilities to study materials at the resolution limit by means of new developments in instrumentation Recommends methods for quantitative structural characterization of sensitive nanomaterials using electron diffraction techniques and describes strategies to collect electron diffraction patterns for such materials This book helps academics, researchers, and industry professionals in materials science, chemistry, physics, and related fields to understand and apply computer-science–derived analysis methods to solve problems regarding data analysis and interpretation of materials properties.
Author: David Cherns
Publisher: Springer Science & Business Media
ISBN: 1461305276
Category : Medical
Languages : en
Pages : 413
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Book Description
The last few years have ~een rapid improvements in semiconductor growth techniques which have produced an expanding range of high quality heterostructures for new semiconductor devises. As the dimensions of such structures approach the nanometer level, it becomes increasingly important to characterise materials properties such as composition uniformity, strain, interface sharpness and roughness and the nature of defects, as well as their influence on electrical and optical properties. Much of this information is being obtained by electron microscopy and this is also an area of rapid progress. There have been advances for thin film studies across a wide range of techniques, including, for example, convergent beam electron diffraction, X-ray and electron energy loss microanalysis and high spatial resolution cathodoluminescence as well as by conventional and high resolution methods. Important develop ments have also occurred in the study of surfaces and film growth phenomena by both microscopy and diffraction techniques. With these developments in mind, an application was made to the NATO Science Committee in late summer 1987 to fund an Advanced Research Work shop to review the electron microscopy of advanced semiconductors. This was subsequently accepted for the 1988 programme and became the "NATO Advanced Research Workshop on the Evaluation of Advanced Semiconductor Materials by Electron Microscopy". The Workshop took place in the pleasant and intimate surroundings of Wills Hall, Bristol, UK, during the week 11-17 September 1988 and was attended by fifty-five participants from fourteen countries.
Author: Alexander V. Latyshev
Publisher: Elsevier
ISBN: 0128105135
Category : Technology & Engineering
Languages : en
Pages : 553
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Book Description
Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications focuses on the physical aspects of semiconductor nanostructures, including growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III–V, IV, and II–VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena. The very comprehensive nature of the book makes it an indispensable source of information for researchers, scientists, and post-graduate students in the field of semiconductor physics, condensed matter physics, and physics of nanostructures, helping them in their daily research. Presents a comprehensive reference on the novel physical phenomena and properties of semiconductor nanostructures Covers recent developments in the field from all over the world Provides an International approach, as chapters are based on results obtained in collaboration with research groups from Russia, Germany, France, England, Japan, Holland, USA, Belgium, China, Israel, Brazil, and former Soviet Union countries
Author: Litao Sun
Publisher: Springer Nature
ISBN: 9811968454
Category : Technology & Engineering
Languages : en
Pages : 378
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Book Description
This book focuses on in-situ transmission electron microscopy (TEM), an investigatory technique used to observe a sample’s response to a given stimulus (including electron irradiation, thermal excitation, mechanical force, optical excitation, electric and magnetic fields) at the nanoscale in real time. The book introduces readers to the technical strategy behind the in-situ technique and its developments. It reviews the research frontiers of using in-situ TEM in energy conversion and storage, catalysis, nanomaterials synthesis, nanoelectronics, etc. Furthermore, it discusses the future prospects for in-situ TEM. The book offers a valuable guide for all undergraduate and graduate students who are interested in TEM characterization technology. It also serves as a reference source on cutting-edge in-situ techniques for researchers and engineers.
Author: Xiao-Feng Zhang
Publisher: Springer Science & Business Media
ISBN: 9783540676812
Category : Medical
Languages : en
Pages : 342
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Book Description
Transmission electron microscopy (TEM) is now recognized as a crucial tool in materials science. This book, authored by a team of expert Chinese and international authors, covers many aspects of modern electron microscopy, from the architecture of novel electron microscopes, advanced theories and techniques in TEM and sample preparation, to a variety of hands-on examples of TEM applications. Volume 2 illustrates the important role that TEM is playing in the development and characterization of advanced materials, including nanostructures, interfacial structures, defects, and macromolecular complexes.
