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Author: Ye Zhou
Publisher: Royal Society of Chemistry
ISBN: 1839165693
Category : Technology & Engineering
Languages : en
Pages : 753
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Book Description
Author: Ye Zhou
Publisher: Royal Society of Chemistry
ISBN: 1839165693
Category : Technology & Engineering
Languages : en
Pages : 753
Get Book
Book Description
Author: Seiichi Aritome
Publisher: John Wiley & Sons
ISBN: 1119132606
Category : Technology & Engineering
Languages : en
Pages : 432
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Book Description
Offers a comprehensive overview of NAND flash memories, with insights into NAND history, technology, challenges, evolutions, and perspectives Describes new program disturb issues, data retention, power consumption, and possible solutions for the challenges of 3D NAND flash memory Written by an authority in NAND flash memory technology, with over 25 years’ experience
Author: Ashok K. Sharma
Publisher: Wiley-IEEE Press
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 680
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Book Description
A valuable reference for the most vital microelectronic components in the marketplace DRAMs are the technology drivers of high volume semiconductor fabrication processes for new generation products that, in addition to computer markets, are finding increased usage in automotive, aviation, military and space, telecommunications, and wireless industries. A new generation of high-density and high-performance memory architectures evolving for mass storage devices, including embedded memories and nonvolatile flash memories, are serving a diverse range of applications. Comprehensive and up to date, Advanced Semiconductor Memories: Architectures, Designs, and Applications offers professionals in the semiconductor and related industries an in-depth review of advanced semiconductor memories technology developments. It provides details on: Static Random Access Memory technologies including advanced architectures, low voltage SRAMs, fast SRAMs, SOI SRAMs, and specialty SRAMs (multiport, FIFOs, CAMs) High Performance Dynamic Random Access Memory-DDRs, synchronous DRAM/SGRAM features and architectures, EDRAM, CDRAM, Gigabit DRAM scaling issues and architectures, multilevel storage DRAMs, and SOI DRAMs Applications-specific DRAM architectures and designs - VRAMs, DDR SGRAMs, RDRAMs, SLDRAMs, 3-D RAM Advanced Nonvolatile Memory designs and technologies, including floating gate cell theory, EEPROM/flash memory cell design, and multilevel flash FRAMs and reliability issues Embedded memory designs and applications, including cache, merged processor, DRAM architectures, memory cards, and multimedia applications Future memory directions with megabytes to terabytes storage capacities using RTDs, single electron memories, etc. A continuation of the topics introduced in Semiconductor Memories: Technology, Testing, and Reliability, the author's earlier work, Advanced Semiconductor Memories: Architectures, Designs, and Applications offers a much-needed reference to the major developments and future directions of advanced semiconductor memory technology.
Author: Manish Verma
Publisher: Springer
ISBN: 9789048174713
Category : Technology & Engineering
Languages : en
Pages : 188
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Book Description
This book proposes novel memory hierarchies and software optimization techniques for the optimal utilization of memory hierarchies. It presents a wide range of optimizations, progressively increasing in the complexity of analysis and of memory hierarchies. The final chapter covers optimization techniques for applications consisting of multiple processes found in most modern embedded devices.
Author: Yoshio Nishi
Publisher: Elsevier
ISBN: 0857098098
Category : Computers
Languages : en
Pages : 456
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Book Description
New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping, and resistive random access memory Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)
Author: Yuan Xie
Publisher: Springer Science & Business Media
ISBN: 144199551X
Category : Technology & Engineering
Languages : en
Pages : 321
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Book Description
This book explores the design implications of emerging, non-volatile memory (NVM) technologies on future computer memory hierarchy architecture designs. Since NVM technologies combine the speed of SRAM, the density of DRAM, and the non-volatility of Flash memory, they are very attractive as the basis for future universal memories. This book provides a holistic perspective on the topic, covering modeling, design, architecture and applications. The practical information included in this book will enable designers to exploit emerging memory technologies to improve significantly the performance/power/reliability of future, mainstream integrated circuits.
Author: Joe Brewer
Publisher: John Wiley & Sons
ISBN: 1118211626
Category : Technology & Engineering
Languages : en
Pages : 766
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Book Description
Presented here is an all-inclusive treatment of Flash technology, including Flash memory chips, Flash embedded in logic, binary cell Flash, and multilevel cell Flash. The book begins with a tutorial of elementary concepts to orient readers who are less familiar with the subject. Next, it covers all aspects and variations of Flash technology at a mature engineering level: basic device structures, principles of operation, related process technologies, circuit design, overall design tradeoffs, device testing, reliability, and applications.
Author: Denny D. Tang
Publisher: John Wiley & Sons
ISBN: 1119562236
Category : Science
Languages : en
Pages : 352
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Book Description
STAY UP TO DATE ON THE STATE OF MRAM TECHNOLOGY AND ITS APPLICATIONS WITH THIS COMPREHENSIVE RESOURCE Magnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond delivers a combination of foundational and advanced treatments of the subjects necessary for students and professionals to fully understand MRAM and other non-volatile memories, like PCM, and ReRAM. The authors offer readers a thorough introduction to the fundamentals of magnetism and electron spin, as well as a comprehensive analysis of the physics of magnetic tunnel junction (MTJ) devices as it relates to memory applications. This book explores MRAM's unique ability to provide memory without requiring the atoms inside the device to move when switching states. The resulting power savings and reliability are what give MRAM its extraordinary potential. The authors describe the current state of academic research in MRAM technology, which focuses on the reduction of the amount of energy needed to reorient magnetization. Among other topics, readers will benefit from the book's discussions of: An introduction to basic electromagnetism, including the fundamentals of magnetic force and other concepts An thorough description of magnetism and magnetic materials, including the classification and properties of magnetic thin film properties and their material preparation and characterization A comprehensive description of Giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) devices and their equivalent electrical model Spin current and spin dynamics, including the properties of spin current, the Ordinary Hall Effect, the Anomalous Hall Effect, and the spin Hall effect Different categories of magnetic random-access memory, including field-write mode MRAM, Spin-Torque-Transfer (STT) MRAM, Spin-Orbit Torque (SOT) MRAM, and others Perfect for senior undergraduate and graduate students studying electrical engineering, similar programs, or courses on topics like spintronics, Magnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond also belongs on the bookshelves of engineers and other professionals involved in the design, development, and manufacture of MRAM technologies.
Author: Andrea Redaelli
Publisher: Woodhead Publishing
ISBN: 0128209461
Category : Technology & Engineering
Languages : en
Pages : 364
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Book Description
Semiconductor Memories and Systems provides a comprehensive overview of the current state of semiconductor memory at the technology and system levels. After an introduction on market trends and memory applications, the book focuses on mainstream technologies, illustrating their current status, challenges and opportunities, with special attention paid to scalability paths. Technologies discussed include static random access memory (SRAM), dynamic random access memory (DRAM), non-volatile memory (NVM), and NAND flash memory. Embedded memory and requirements and system level needs for storage class memory are also addressed. Each chapter covers physical operating mechanisms, fabrication technologies, and the main challenges to scalability. Finally, the work reviews the emerging trends for storage class memory, mainly focusing on the advantages and opportunities of phase change based memory technologies. Features contributions from experts from leading companies in semiconductor memory Discusses physical operating mechanisms, fabrication technologies and paths to scalability for current and emerging semiconductor memories Reviews primary memory technologies, including SRAM, DRAM, NVM and NAND flash memory Includes emerging storage class memory technologies such as phase change memory
Author: Betty Prince
Publisher: John Wiley & Sons
ISBN: 1118760468
Category : Technology & Engineering
Languages : en
Pages : 466
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Book Description
The large scale integration and planar scaling of individual system chips is reaching an expensive limit. If individual chips now, and later terrabyte memory blocks, memory macros, and processing cores, can be tightly linked in optimally designed and processed small footprint vertical stacks, then performance can be increased, power reduced and cost contained. This book reviews for the electronics industry engineer, professional and student the critical areas of development for 3D vertical memory chips including: gate-all-around and junction-less nanowire memories, stacked thin film and double gate memories, terrabit vertical channel and vertical gate stacked NAND flash, large scale stacking of Resistance RAM cross-point arrays, and 2.5D/3D stacking of memory and processor chips with through-silicon-via connections now and remote links later. Key features: Presents a review of the status and trends in 3-dimensional vertical memory chip technologies. Extensively reviews advanced vertical memory chip technology and development Explores technology process routes and 3D chip integration in a single reference
