Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications PDF Download
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Author: N. Mohankumar
Publisher: CRC Press
ISBN: 100045455X
Category : Science
Languages : en
Pages : 142
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Book Description
High electron mobility transistor (HEMT) has better performance potential than the conventional MOSFETs. Further, InAs is a perfect candidate for the HEMT device architecture owing to its peak electron mobility. Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. This book explains different types of device architectures available to enhance performance including InAs-based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs-based SG and DG-HEMT is also discussed. The main goal of this book is to characterize the InAs device to achieve terahertz frequency regime with proper device parameters. Features: Explains the influence of InAs material in the performance of HEMTs and MOS-HEMTs. Covers novel indium arsenide architectures for achieving terahertz frequencies Discusses impact of device parameters on frequency response Illustrates noise characterization of optimized indium arsenide HEMTs Introduces terahertz electronics including sources for terahertz applications. This book is of special interest to researchers and graduate students in Electronics Engineering, High Electron Mobility Transistors, Semi-conductors, Communications, and Nanodevices.
Author: N. Mohankumar
Publisher: CRC Press
ISBN: 100045455X
Category : Science
Languages : en
Pages : 142
Get Book Here
Book Description
High electron mobility transistor (HEMT) has better performance potential than the conventional MOSFETs. Further, InAs is a perfect candidate for the HEMT device architecture owing to its peak electron mobility. Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. This book explains different types of device architectures available to enhance performance including InAs-based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs-based SG and DG-HEMT is also discussed. The main goal of this book is to characterize the InAs device to achieve terahertz frequency regime with proper device parameters. Features: Explains the influence of InAs material in the performance of HEMTs and MOS-HEMTs. Covers novel indium arsenide architectures for achieving terahertz frequencies Discusses impact of device parameters on frequency response Illustrates noise characterization of optimized indium arsenide HEMTs Introduces terahertz electronics including sources for terahertz applications. This book is of special interest to researchers and graduate students in Electronics Engineering, High Electron Mobility Transistors, Semi-conductors, Communications, and Nanodevices.
Author: N. Mohankumar
Publisher: CRC Press
ISBN: 1000454568
Category : Science
Languages : en
Pages : 114
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Book Description
High electron mobility transistor (HEMT) has better performance potential than the conventional MOSFETs. Further, InAs is a perfect candidate for the HEMT device architecture owing to its peak electron mobility. Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. This book explains different types of device architectures available to enhance performance including InAs-based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs-based SG and DG-HEMT is also discussed. The main goal of this book is to characterize the InAs device to achieve terahertz frequency regime with proper device parameters. Features: Explains the influence of InAs material in the performance of HEMTs and MOS-HEMTs. Covers novel indium arsenide architectures for achieving terahertz frequencies Discusses impact of device parameters on frequency response Illustrates noise characterization of optimized indium arsenide HEMTs Introduces terahertz electronics including sources for terahertz applications. This book is of special interest to researchers and graduate students in Electronics Engineering, High Electron Mobility Transistors, Semi-conductors, Communications, and Nanodevices.
Author: Rishabha Malviya
Publisher: John Wiley & Sons
ISBN: 1119857325
Category : Computers
Languages : en
Pages : 470
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Book Description
DEEP LEARNING FOR TREATMENTS The book provides the direction for future research in deep learning in terms of its role in targeted treatment, biological systems, site-specific drug delivery, risk assessment in therapy, etc. Deep Learning for Targeted Treatments describes the importance of the deep learning framework for patient care, disease imaging/detection, and health management. Since deep learning can and does play a major role in a patient’s healthcare management by controlling drug delivery to targeted tissues or organs, the main focus of the book is to leverage the various prospects of the DL framework for targeted therapy of various diseases. In terms of its industrial significance, this general-purpose automatic learning procedure is being widely implemented in pharmaceutical healthcare. Audience The book will be immensely interesting and useful to researchers and those working in the areas of clinical research, disease management, pharmaceuticals, R&D formulation, deep learning analytics, remote healthcare management, healthcare analytics, and deep learning in the healthcare industry.
Author: Ho-Jin Song
Publisher: CRC Press
ISBN: 9814613096
Category : Science
Languages : en
Pages : 606
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Book Description
Terahertz waves, which lie in the frequency range of 0.1-10 THz, have long been investigated in a few limited fields, such as astronomy, because of a lack of devices for their generation and detection. Several technical breakthroughs made over the last couple of decades now allow us to radiate and detect terahertz waves more easily, which has trigg
Author:
Publisher:
ISBN: 1119507677
Category :
Languages : en
Pages : 896
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Book Description
Author: R.E. Miles
Publisher: Springer Science & Business Media
ISBN: 1402065035
Category : Technology & Engineering
Languages : en
Pages : 365
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Book Description
Want an overview of where the technology of terahertz detection has been going? Here it is. The technology has largely been developed around expensive and bulky femtosecond laser systems but, as described in this book, advances in semiconductor superlattice technology are leading to compact "electronic" sources such as the quantum cascade laser, two-terminal "Gunn" type oscillators and even a THz frequency amplifier. These advances towards electronic (as opposed to optical) THz systems mean that the technology will become portable and much less costly.
Author: Mira Naftaly
Publisher: Artech House
ISBN: 1608077772
Category : Technology & Engineering
Languages : en
Pages : 386
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Book Description
This new book describes modern terahertz (THz) systems and devices and presents practical techniques for accurate measurement with an emphasis on evaluating uncertainties and identifying sources of error. This is the first THz book on the market to address measurement methodologies and issues -- perfect for practitioners and aspiring practitioners wishing to learn good measurement practice and avoid pitfalls. This book provides a brief review of different THz systems and devices, followed by chapters detailing the measurement issues encountered in using each of the main types of THz systems, and a guide to performing measurements rigorously. Particular attention is given to evaluating uncertainties, and recognizing potential sources of errors. The main focus is on time-domain spectroscopy, by far the most widely used technique. Readers are also presented with examples of applications with the emphasis on utility, both in research and in industry.
Author: D. Nirmal
Publisher: CRC Press
ISBN: 0429862520
Category : Science
Languages : en
Pages : 434
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Book Description
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Author: Jaco du Preez
Publisher: Springer
ISBN: 3319350684
Category : Technology & Engineering
Languages : en
Pages : 165
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Book Description
This book comprehensively reviews the state of the art in millimeter-wave antennas, traces important recent developments and provides information on a wide range of antenna configurations and applications. While fundamental theoretical aspects are discussed whenever necessary, the book primarily focuses on design principles and concepts, manufacture, measurement techniques, and practical results. Each of the various antenna types scalable to millimeter-wave dimensions is considered individually, with coverage of leaky-wave and surface-wave antennas, printed antennas, integrated antennas, and reflector and lens systems. The final two chapters address the subject from a systems perspective, providing an overview of supporting circuitry and examining in detail diverse millimeter-wave applications, including high-speed wireless communications, radio astronomy, and radar. The vast amount of information now available on millimeter-wave systems can be daunting for researchers and designers entering the field. This book offers readers essential guidance, helping them to gain a thorough understanding based on the most recent research findings and serving as a sound basis for informed decision-making.
Author: Narendra Kumar
Publisher: Artech House
ISBN: 1608078329
Category : Technology & Engineering
Languages : en
Pages : 365
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Book Description
This new resource presents readers with all relevant information and comprehensive design methodology of wideband amplifiers. This book specifically focuses on distributed amplifiers and their main components, and presents numerous RF and microwave applications including well-known historical and recent architectures, theoretical approaches, circuit simulation, and practical implementation techniques. A great resource for practicing designers and engineers, this book contains numerous well-known and novel practical circuits, architectures, and theoretical approaches with detailed description of their operational principles.
