A Study of Growth Mechanisms and Electrical and Optical Properties of Epitaxial Al[x] Ga[1-x]N Layers Grown by Atmospheric Pressure Metalorganic Chemical Vapor Deposition PDF Download
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Author: Keyvan Rahim Sayyah
Publisher:
ISBN:
Category : Aluminum nitride
Languages : en
Pages : 352
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Book Description
![A Study of Growth Mechanisms and Electrical and Optical Properties of Epitaxial Al[x] Ga[1-x]N Layers Grown by Atmospheric Pressure Metalorganic Chemical Vapor Deposition PDF](https://books.google.com/books/content/images/frontcover/mr39tgAACAAJ?fife=w80-h100)
Author: Keyvan Rahim Sayyah
Publisher:
ISBN:
Category : Aluminum nitride
Languages : en
Pages : 352
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Author: Hiroyuki Fujiwara
Publisher: John Wiley & Sons
ISBN: 9780470060186
Category : Technology & Engineering
Languages : en
Pages : 388
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Book Description
Ellipsometry is a powerful tool used for the characterization of thin films and multi-layer semiconductor structures. This book deals with fundamental principles and applications of spectroscopic ellipsometry (SE). Beginning with an overview of SE technologies the text moves on to focus on the data analysis of results obtained from SE, Fundamental data analyses, principles and physical backgrounds and the various materials used in different fields from LSI industry to biotechnology are described. The final chapter describes the latest developments of real-time monitoring and process control which have attracted significant attention in various scientific and industrial fields.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 13
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Al(x)Ga(1-x)N layers of varying composition (0.5
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 15
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Book Description
AlxGa1-xN layers of varying composition (0.5
Author:
Publisher:
ISBN:
Category : Ceramics
Languages : en
Pages : 500
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Book Description
Author: B Baliga
Publisher: Elsevier
ISBN: 0323155456
Category : Technology & Engineering
Languages : en
Pages : 337
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Book Description
Epitaxial Silicon Technology is a single-volume, in-depth review of all the silicon epitaxial growth techniques. This technology is being extended to the growth of epitaxial layers on insulating substrates by means of a variety of lateral seeding approaches. This book is divided into five chapters, and the opening chapter describes the growth of silicon layers by vapor-phase epitaxy, considering both atmospheric and low-pressure growth. The second chapter discusses molecular-beam epitaxial growth of silicon, providing a unique ability to grow very thin layers with precisely controlled doping characteristics. The third chapter introduces the silicon liquid-phase epitaxy, in which the growth of silicon layers arose from a need to decrease the growth temperature and to suppress autodoping. The fourth chapter addresses the growth of silicon on sapphire for improving the radiation hardness of CMOS integrated circuits. The fifth chapter deals with the advances in the application of silicon epitaxial growth. This chapter also discusses the formation of epitaxial layers of silicon on insulators, such as silicon dioxide, which do not provide a natural single crystal surface for growth. Each chapter begins with a discussion on the fundamental transport mechanisms and the kinetics governing the growth rate, followed by a description of the electrical properties that can be achieved in the layers and the restrictions imposed by the growth technique upon the control over its electrical characteristics. Each chapter concludes with a discussion on the applications of the particular growth technique. This reference material will be useful for process technologists and engineers who may need to apply epitaxial growth for device fabrication.
Author:
Publisher: Academic Press
ISBN: 0080864376
Category : Science
Languages : en
Pages : 457
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Book Description
Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures. Atomic-level control of semiconductor microstructures Molecular beam epitaxy, metal-organic chemical vapor deposition Quantum wells and quantum wires Lasers, photon(IR)detectors, heterostructure transistors
Author: J Matthews
Publisher: Elsevier
ISBN: 0323152120
Category : Science
Languages : en
Pages : 401
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Book Description
Epitaxial Growth, Part A is a compilation of review articles that describe various aspects of the growth of single-crystal films on single-crystal substrates. The collection contains topics on the historical development of epitaxy, the nucleation of thin films, the structure of the interface between film and substrate, and the generation of defects during film growth. The text also provides descriptions of the methods used to prepare and examine thin films and a list of the overgrowth-substrate combinations studied. Mineralogists, materials engineers and scientists, and physicists will find this book a great source of insight.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 17
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Book Description
Under the SDIO/IST support (grant N00014-90-J-1761), we have made progress in the investigation of the metal systems that are thermodynamically stable on GaAs. Successful growth of the single phase PtGa2 and CoGa on GaAs has been demonstrated by MOCVD (metal organic chemical vapor deposition) using mixed-metal organometallic precursors of limited volatility and by MBE (molecular beam epitaxy). Fundamental understanding of these thermodynamically stable compounds has been obtained. Our accomplishments include the studies of the stability, the growth process, the chemical, physical, and electrical properties of metal/GaAs systems.
Author: Toshio Kanno
Publisher:
ISBN:
Category :
Languages : ja
Pages : 18
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Book Description
