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Author: 鄭子路
Publisher: Open Dissertation Press
ISBN: 9781374736788
Category : Science
Languages : en
Pages : 90
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Book Description
This dissertation, "A Study of Epitaxial YBa2Cu3O7-8 Thin Films With a Well-defined Orientation and Related Topics" by 鄭子路, Tsz-lo, Cheng, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b3121296 Subjects: Thin films Epitaxy
Author: 鄭子路
Publisher: Open Dissertation Press
ISBN: 9781374736788
Category : Science
Languages : en
Pages : 90
Get Book Here
Book Description
This dissertation, "A Study of Epitaxial YBa2Cu3O7-8 Thin Films With a Well-defined Orientation and Related Topics" by 鄭子路, Tsz-lo, Cheng, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b3121296 Subjects: Thin films Epitaxy
Author: Tsz-lo Cheng
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 144
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Book Description
![Study of Epitaxial Thin Films of Yba2cu3o7-[Delta] on Silicon with Different Buffer Layers PDF](https://books.google.com/books/content/images/frontcover/D4BcAQAACAAJ?fife=w80-h100)
Author: Engang Fu
Publisher: Open Dissertation Press
ISBN: 9781374667174
Category :
Languages : en
Pages :
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Book Description
This dissertation, "Study of Epitaxial Thin Films of YBa2Cu3O7-[delta] on Silicon With Different Buffer Layers" by Engang, Fu, 付恩剛, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Abstract of thesis entitled STUDY OF EPITAXIAL THIN FILMS OF YBa Cu O ON 2 3 7-δ SILICON WITH DIFFERENT BUFFER LAYERS submitted by Fu Engang for the degree of Master of Philosophy at The University of Hong Kong in August 2005 Silicon is the most widely used semiconductor in the microelectronic industry. Highly epitaxial thin films of YBa Cu O (YBCO) grown on Si wafers are of 2 3 7-δ special interest for development of superconductor/semiconductor hybrid microelectronic devices and circuits. However, severe interaction between Si and YBCO layer, large mismatch in their lattice constant, and strain due to different thermal expansion often degrade the crystallinity and superconductivity of the grown YBCO layers. In this study, yttria-stabilized zirconia (YSZ) and Eu CuO (ECO) 2 4 were introduced as double buffer layers to improve the growth and properties of the YBCO thin films grown on silicon. Preparation and characterization of epitaxial YBCO/ECO/YSZ/Si multilayer structures were studied. YBCO thin films and the double buffer layers of ECO/YSZ were deposited on the silicon (100) substrate by the pulsed laser deposition (PLD) method. Firstly, the YSZ thin layer was grown epitaxially on silicon (100) substrate to separate YBCO from the Si substrate. Effects of substrate temperature and operating gas pressure on the structure and surface roughness of YSZ thin film were examined and the optimum deposition parameters were determined based on experimental results and comprehensive analysis. X-Ray diffraction (XRD) patterns and rocking curve revealed an epitaxial growth with a perfect c-axis orientation. The YSZ thin films grown on silicon substrate have smooth surface, providing a base on which ECO and YBCO thin film can be grown epitaxially. To further improve the quality of YBCO films, an additional layer of ECO with very stable 214-T' crystal structure was inserted between YBCO and YSZ/Si. The influence of substrate temperature and oxygen gas pressure on the properties of ECO thin films grown on YSZ/Si were experimentally analyzed and the growth conditions were optimized. Finally, the epitaxial YBCO thin films were grown on silicon substrate with double buffer layers of ECO/YSZ. The influences of substrate temperature, oxygen gas pressure and different buffer layers on the properties of YBCO thin films were studied. It was found that the crystal structure, surface roughness and superconductivity of YBCO films could be significantly improved by adding such a double buffer of ECO/YSZ. The quality of the YBCO thin films has been significantly enhanced when compared with that grown on Si with a single YSZ buffer layer and with double buffer layers of Nd CuO (NCO)/YSZ. Such highly 2 4 epitaxial thin films of YBCO grown on silicon should be of great interest for various applications including high-frequency elements, millimeter-wave receivers, and superconducting quantum interference devices. DOI: 10.5353/th_b3637488 Subjects: Thin films Silicon Epitaxy
Author: James S. Speck
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 588
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Book Description
Our understanding and control of epitaxial oxide heterostructures has progressed along multiple frontiers including magnetic, dielectric, ferroelectric, and superconducting oxide materials. This has resulted in both independent rediscovery and the successful borrowing of ideas from ceramic science, solid-state physics, and semiconductor epitaxy. A new field of materials science has emerged which aims at the use of the intrinsic properties of various oxide materials in single-crystal thin-film form. Exploiting the potential of these materials, however, will only be possible if many fundamental and engineering questions can be answered. This book represents continued progress toward fulfilling that promise. Technical information on epitaxial oxide thin films from industry, academia and government laboratories is presented. Topics include: dielectrics; ferroelectrics; optics; superconductors; magnetics; magnetoresistance.
Author: J Matthews
Publisher: Elsevier
ISBN: 0323152120
Category : Science
Languages : en
Pages : 401
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Book Description
Epitaxial Growth, Part A is a compilation of review articles that describe various aspects of the growth of single-crystal films on single-crystal substrates. The collection contains topics on the historical development of epitaxy, the nucleation of thin films, the structure of the interface between film and substrate, and the generation of defects during film growth. The text also provides descriptions of the methods used to prepare and examine thin films and a list of the overgrowth-substrate combinations studied. Mineralogists, materials engineers and scientists, and physicists will find this book a great source of insight.
![Study of Epitaxial Thin Films of YBa2Cu3O7-[delta] on Silicon with Different Buffer Layers PDF](https://books.google.com/books/content/images/frontcover/BCs2ygAACAAJ?fife=w80-h100)
Author: Engang Fu
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 16
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Book Description
Author: J. W. Matthews
Publisher: Elsevier
ISBN: 1483271811
Category : Science
Languages : en
Pages : 315
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Book Description
Epitaxial Growth Part B is the second part of a collection of review articles that describe various aspects of the growth of single-crystal films on single-crystal substrates. The topics discussed are the nucleation of thin films, the structure of the interface between film and substrate, and the generation of defects during film growth. The methods used to prepare and examine thin films are described and a list of the overgrowth-substrate combinations studied so far is given.
Author:
Publisher: Physics Department Rajshahi University
ISBN:
Category : Science
Languages : en
Pages : 264
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Book Description
Author:
Publisher: Elsevier
ISBN: 0080532675
Category : Science
Languages : en
Pages : 673
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Book Description
Although there has been steady progress in understanding aspects of epitaxial growth throughout the last 30 years of modern surface science, work in this area has intensified greatly in the last 5 years. A number of factors have contributed to this expansion. One has been the general trend in surface science to tackle problems of increasing complexity as confidence is gained in the methodology, so for example, the role of oxide/metal interfaces in determining the properties of many practical supported catalysts is now being explored in greater detail. A second factor is the recognition of the potential importance of artificial multilayer materials not only in semiconductor devices but also in metal/metal systems because of their novel magnetic properties. Perhaps even more important than either of these application areas, however, is the newly-discovered power of scanning probe microscopies, and most notably scanning tunneling microscopy (STM), to provide the means to study epitaxial growth phenomena on an atomic scale under a wide range of conditions. These techniques have also contributed to revitalised interest in methods of fabricating and exploiting artificial structures (lateral as well as in layers) on a nanometre scale.This volume, on Growth and Properties of Ultrathin Epitaxial Layers, includes a collection of articles which reflects the present state of activity in this field. The emphasis is on metals and oxides rather than semiconductors.
Author:
Publisher:
ISBN:
Category : Electronics
Languages : en
Pages : 416
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Book Description
