Author:
Publisher: Academic Press
ISBN: 0128228717
Category : Science
Languages : en
Pages : 482
Book Description
Ultrawide Bandgap Semiconductors, Volume 107 in the Semiconductors and Semimetals series, highlights the latest breakthrough in fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials and devices based on gallium oxide, aluminium nitride, boron nitride, and diamond. It includes important topics on the materials growth, characterization, and device applications of UWBG materials, where electronic, photonic, thermal and quantum properties are all thoroughly explored. - Contains the latest breakthrough in fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials and devices - Provides a comprehensive presentation that covers the fundamentals of materials growth and characterization, as well as design and performance characterization of state-of-the-art UWBG materials, structures, and devices - Presents an in-depth discussion on electronic, photonic, thermal, and quantum technologies based on UWBG materials
Ultrawide Bandgap Semiconductors
Author:
Publisher: Academic Press
ISBN: 0128228717
Category : Science
Languages : en
Pages : 482
Book Description
Ultrawide Bandgap Semiconductors, Volume 107 in the Semiconductors and Semimetals series, highlights the latest breakthrough in fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials and devices based on gallium oxide, aluminium nitride, boron nitride, and diamond. It includes important topics on the materials growth, characterization, and device applications of UWBG materials, where electronic, photonic, thermal and quantum properties are all thoroughly explored. - Contains the latest breakthrough in fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials and devices - Provides a comprehensive presentation that covers the fundamentals of materials growth and characterization, as well as design and performance characterization of state-of-the-art UWBG materials, structures, and devices - Presents an in-depth discussion on electronic, photonic, thermal, and quantum technologies based on UWBG materials
Publisher: Academic Press
ISBN: 0128228717
Category : Science
Languages : en
Pages : 482
Book Description
Ultrawide Bandgap Semiconductors, Volume 107 in the Semiconductors and Semimetals series, highlights the latest breakthrough in fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials and devices based on gallium oxide, aluminium nitride, boron nitride, and diamond. It includes important topics on the materials growth, characterization, and device applications of UWBG materials, where electronic, photonic, thermal and quantum properties are all thoroughly explored. - Contains the latest breakthrough in fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials and devices - Provides a comprehensive presentation that covers the fundamentals of materials growth and characterization, as well as design and performance characterization of state-of-the-art UWBG materials, structures, and devices - Presents an in-depth discussion on electronic, photonic, thermal, and quantum technologies based on UWBG materials
More-than-Moore Devices and Integration for Semiconductors
Author: Francesca Iacopi
Publisher: Springer Nature
ISBN: 3031216105
Category : Technology & Engineering
Languages : en
Pages : 271
Book Description
This book provides readers with a comprehensive, state-of-the-art reference for miniaturized More-than-Moore systems with a broad range of functionalities that can be added to 3D microsystems, including flexible electronics, metasurfaces and power sources. The book also includes examples of applications for brain-computer interfaces and event-driven imaging systems. Provides a comprehensive, state-of-the-art reference for miniaturized More-than-Moore systems; Covers functionalities to add to 3D microsystems, including flexible electronics, metasurfaces and power sources; Includes current applications, such as brain-computer interfaces, event - driven imaging and edge computing.
Publisher: Springer Nature
ISBN: 3031216105
Category : Technology & Engineering
Languages : en
Pages : 271
Book Description
This book provides readers with a comprehensive, state-of-the-art reference for miniaturized More-than-Moore systems with a broad range of functionalities that can be added to 3D microsystems, including flexible electronics, metasurfaces and power sources. The book also includes examples of applications for brain-computer interfaces and event-driven imaging systems. Provides a comprehensive, state-of-the-art reference for miniaturized More-than-Moore systems; Covers functionalities to add to 3D microsystems, including flexible electronics, metasurfaces and power sources; Includes current applications, such as brain-computer interfaces, event - driven imaging and edge computing.
Advanced Ultra Low-Power Semiconductor Devices
Author: Shubham Tayal
Publisher: John Wiley & Sons
ISBN: 1394166419
Category : Technology & Engineering
Languages : en
Pages : 325
Book Description
ADVANCED ULTRA LOW-POWER SEMICONDUCTOR DEVICES Written and edited by a team of experts in the field, this important new volume broadly covers the design and applications of metal oxide semiconductor field effect transistors. This outstanding new volume offers a comprehensive overview of cutting-edge semiconductor components tailored for ultra-low power applications. These components, pivotal to the foundation of electronic devices, play a central role in shaping the landscape of electronics. With a focus on emerging low-power electronic devices and their application across domains like wireless communication, biosensing, and circuits, this book presents an invaluable resource for understanding this dynamic field. Bringing together experts and researchers from various facets of the VLSI domain, the book addresses the challenges posed by advanced low-power devices. This collaborative effort aims to propel engineering innovations and refine the practical implementation of these technologies. Specific chapters delve into intricate topics such as Tunnel FET, negative capacitance FET device circuits, and advanced FETs tailored for diverse circuit applications. Beyond device-centric discussions, the book delves into the design intricacies of low-power memory systems, the fascinating realm of neuromorphic computing, and the pivotal issue of thermal reliability. Authors provide a robust foundation in device physics and circuitry while also exploring novel materials and architectures like transistors built on pioneering channel/dielectric materials. This exploration is driven by the need to achieve both minimal power consumption and ultra-fast switching speeds, meeting the relentless demands of the semiconductor industry. The book’s scope encompasses concepts like MOSFET, FinFET, GAA MOSFET, the 5-nm and 7-nm technology nodes, NCFET, ferroelectric materials, subthreshold swing, high-k materials, as well as advanced and emerging materials pivotal for the semiconductor industry’s future.
Publisher: John Wiley & Sons
ISBN: 1394166419
Category : Technology & Engineering
Languages : en
Pages : 325
Book Description
ADVANCED ULTRA LOW-POWER SEMICONDUCTOR DEVICES Written and edited by a team of experts in the field, this important new volume broadly covers the design and applications of metal oxide semiconductor field effect transistors. This outstanding new volume offers a comprehensive overview of cutting-edge semiconductor components tailored for ultra-low power applications. These components, pivotal to the foundation of electronic devices, play a central role in shaping the landscape of electronics. With a focus on emerging low-power electronic devices and their application across domains like wireless communication, biosensing, and circuits, this book presents an invaluable resource for understanding this dynamic field. Bringing together experts and researchers from various facets of the VLSI domain, the book addresses the challenges posed by advanced low-power devices. This collaborative effort aims to propel engineering innovations and refine the practical implementation of these technologies. Specific chapters delve into intricate topics such as Tunnel FET, negative capacitance FET device circuits, and advanced FETs tailored for diverse circuit applications. Beyond device-centric discussions, the book delves into the design intricacies of low-power memory systems, the fascinating realm of neuromorphic computing, and the pivotal issue of thermal reliability. Authors provide a robust foundation in device physics and circuitry while also exploring novel materials and architectures like transistors built on pioneering channel/dielectric materials. This exploration is driven by the need to achieve both minimal power consumption and ultra-fast switching speeds, meeting the relentless demands of the semiconductor industry. The book’s scope encompasses concepts like MOSFET, FinFET, GAA MOSFET, the 5-nm and 7-nm technology nodes, NCFET, ferroelectric materials, subthreshold swing, high-k materials, as well as advanced and emerging materials pivotal for the semiconductor industry’s future.
Development and Investigation of Novel Logic-in-Memory and Nonvolatile Logic Circuits Utilizing Hafnium Oxide-Based Ferroelectric Field-Effect Transistors
Author: Evelyn Tina Breyer
Publisher: BoD – Books on Demand
ISBN: 3755708523
Category : Technology & Engineering
Languages : en
Pages : 216
Book Description
Not only conventional computer architectures, such as the von-Neumann architecture with its inevitable von-Neumann bottleneck, but likewise the emerging field of edge computing require to substantially decrease the spatial separation of logic and memory units to overcome power and latency shortages. The integration of logic operations into memory units (Logic-in-Memory), as well as memory elements into logic circuits (Nonvolatile Logic), promises to fulfill this request by combining high-speed with low-power operation. Ferroelectric field-effect transistors (FeFETs) based on hafnium oxide prove to be auspicious candidates for the memory elements in applications of that kind, as those nonvolatile memory elements are CMOS-compatible and likewise scalable. This work presents implementations that merge logic and memory by exploiting the natural capability of the FeFET to combine logic functionality (transistor) and memory ability (nonvolatility).
Publisher: BoD – Books on Demand
ISBN: 3755708523
Category : Technology & Engineering
Languages : en
Pages : 216
Book Description
Not only conventional computer architectures, such as the von-Neumann architecture with its inevitable von-Neumann bottleneck, but likewise the emerging field of edge computing require to substantially decrease the spatial separation of logic and memory units to overcome power and latency shortages. The integration of logic operations into memory units (Logic-in-Memory), as well as memory elements into logic circuits (Nonvolatile Logic), promises to fulfill this request by combining high-speed with low-power operation. Ferroelectric field-effect transistors (FeFETs) based on hafnium oxide prove to be auspicious candidates for the memory elements in applications of that kind, as those nonvolatile memory elements are CMOS-compatible and likewise scalable. This work presents implementations that merge logic and memory by exploiting the natural capability of the FeFET to combine logic functionality (transistor) and memory ability (nonvolatility).
Integrated Electronics on Aluminum Nitride
Author: Reet Chaudhuri
Publisher: Springer Nature
ISBN: 3031171993
Category : Technology & Engineering
Languages : en
Pages : 266
Book Description
This thesis outlines the principles, device physics, and technological applications of electronics based on the ultra-wide bandgap semiconductor aluminum nitride. It discusses the basic principles of electrostatics and transport properties of polarization-induced two-dimensional electron and hole channels in semiconductor heterostructures based on aluminum nitride. It explains the discovery of high-density two-dimensional hole gases in undoped heterojunctions, and shows how these high conductivity n- and p-type channels are used for high performance nFETs and pFETs, along with wide bandgap RF, mm-wave, and CMOS applications. The thesis goes on to discuss how the several material advantages of aluminum nitride, such as its high thermal conductivity and piezoelectric coefficient, enable not just high performance of transistors, but also monolithic integration of passive elements such as high frequency filters, enabling a new form factor for integrated RF electronics.
Publisher: Springer Nature
ISBN: 3031171993
Category : Technology & Engineering
Languages : en
Pages : 266
Book Description
This thesis outlines the principles, device physics, and technological applications of electronics based on the ultra-wide bandgap semiconductor aluminum nitride. It discusses the basic principles of electrostatics and transport properties of polarization-induced two-dimensional electron and hole channels in semiconductor heterostructures based on aluminum nitride. It explains the discovery of high-density two-dimensional hole gases in undoped heterojunctions, and shows how these high conductivity n- and p-type channels are used for high performance nFETs and pFETs, along with wide bandgap RF, mm-wave, and CMOS applications. The thesis goes on to discuss how the several material advantages of aluminum nitride, such as its high thermal conductivity and piezoelectric coefficient, enable not just high performance of transistors, but also monolithic integration of passive elements such as high frequency filters, enabling a new form factor for integrated RF electronics.
Device Circuit Co-Design Issues in FETs
Author: Shubham Tayal
Publisher: CRC Press
ISBN: 1000926427
Category : Technology & Engineering
Languages : en
Pages : 280
Book Description
This book provides an overview of emerging semiconductor devices and their applications in electronic circuits, which form the foundation of electronic devices. Device Circuit Co-Design Issues in FETs provides readers with a better understanding of the ever-growing field of low-power electronic devices and their applications in the wireless, biosensing, and circuit domains. The book brings researchers and engineers from various disciplines of the VLSI domain together to tackle the emerging challenges in the field of engineering and applications of advanced low-power devices in an effort to improve the performance of these technologies. The chapters examine the challenges and scope of FinFET device circuits, 3D FETs, and advanced FET for circuit applications. The book also discusses low-power memory design, neuromorphic computing, and issues related to thermal reliability. The authors provide a good understanding of device physics and circuits, and discuss transistors based on the new channel/dielectric materials and device architectures to achieve low-power dissipation and ultra-high switching speeds to fulfill the requirements of the semiconductor industry. This book is intended for students, researchers, and professionals in the field of semiconductor devices and nanodevices, as well as those working on device-circuit co-design issues.
Publisher: CRC Press
ISBN: 1000926427
Category : Technology & Engineering
Languages : en
Pages : 280
Book Description
This book provides an overview of emerging semiconductor devices and their applications in electronic circuits, which form the foundation of electronic devices. Device Circuit Co-Design Issues in FETs provides readers with a better understanding of the ever-growing field of low-power electronic devices and their applications in the wireless, biosensing, and circuit domains. The book brings researchers and engineers from various disciplines of the VLSI domain together to tackle the emerging challenges in the field of engineering and applications of advanced low-power devices in an effort to improve the performance of these technologies. The chapters examine the challenges and scope of FinFET device circuits, 3D FETs, and advanced FET for circuit applications. The book also discusses low-power memory design, neuromorphic computing, and issues related to thermal reliability. The authors provide a good understanding of device physics and circuits, and discuss transistors based on the new channel/dielectric materials and device architectures to achieve low-power dissipation and ultra-high switching speeds to fulfill the requirements of the semiconductor industry. This book is intended for students, researchers, and professionals in the field of semiconductor devices and nanodevices, as well as those working on device-circuit co-design issues.
New Materials and Devices Enabling 5G Applications and Beyond
Author: Nadine Collaert
Publisher: Elsevier
ISBN: 0128234504
Category : Technology & Engineering
Languages : en
Pages : 369
Book Description
New Materials and Devices for 5G Applications and Beyond focuses on the materials, device architectures and enabling integration schemes for 5G applications and emerging technologies. It gives a comprehensive overview of the trade-offs, challenges and unique properties of novel upcoming technologies. Starting from the application side and its requirements, the book examines different technologies under consideration for the different functions, both more conventional to exploratory, and within this context the book provides guidance to the reader on how to possibly optimize the system for a particular application. This book aims at guiding the reader through the technologies required to enable 5G applications, with the main focus on mm-wave frequencies, up to THz. New Materials and Devises for 5G Applications and Beyond is suitable for industrial researchers and development engineers, and researchers in materials science, device engineering and circuit design. - Reviews challenges and emerging opportunities for materials, devices, and integration to enable 5G technologies - Includes discussion of technologies such as RF-MEMs, RF FINFETs, and transistors based on current and emerging materials (InP, GaN, etc.) - Focuses on mm-wave frequencies up to the terahertz regime
Publisher: Elsevier
ISBN: 0128234504
Category : Technology & Engineering
Languages : en
Pages : 369
Book Description
New Materials and Devices for 5G Applications and Beyond focuses on the materials, device architectures and enabling integration schemes for 5G applications and emerging technologies. It gives a comprehensive overview of the trade-offs, challenges and unique properties of novel upcoming technologies. Starting from the application side and its requirements, the book examines different technologies under consideration for the different functions, both more conventional to exploratory, and within this context the book provides guidance to the reader on how to possibly optimize the system for a particular application. This book aims at guiding the reader through the technologies required to enable 5G applications, with the main focus on mm-wave frequencies, up to THz. New Materials and Devises for 5G Applications and Beyond is suitable for industrial researchers and development engineers, and researchers in materials science, device engineering and circuit design. - Reviews challenges and emerging opportunities for materials, devices, and integration to enable 5G technologies - Includes discussion of technologies such as RF-MEMs, RF FINFETs, and transistors based on current and emerging materials (InP, GaN, etc.) - Focuses on mm-wave frequencies up to the terahertz regime
VLSI Design and Test
Author: Ambika Prasad Shah
Publisher: Springer Nature
ISBN: 3031215141
Category : Computers
Languages : en
Pages : 607
Book Description
This book constitutes the proceedings of the 26th International Symposium on VLSI Design and Test, VDAT 2022, which took place in Jammu, India, in July 2022. The 32 regular papers and 16 short papers presented in this volume were carefully reviewed and selected from 220 submissions. They were organized in topical sections as follows: Devices and Technology; Sensors; Analog/Mixed Signal; Digital Design; Emerging Technologies and Memory; System Design.
Publisher: Springer Nature
ISBN: 3031215141
Category : Computers
Languages : en
Pages : 607
Book Description
This book constitutes the proceedings of the 26th International Symposium on VLSI Design and Test, VDAT 2022, which took place in Jammu, India, in July 2022. The 32 regular papers and 16 short papers presented in this volume were carefully reviewed and selected from 220 submissions. They were organized in topical sections as follows: Devices and Technology; Sensors; Analog/Mixed Signal; Digital Design; Emerging Technologies and Memory; System Design.
Integration of AI, Quantum Computing, and Semiconductor Technology
Author: Mishra, Brojo Kishore
Publisher: IGI Global
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 534
Book Description
The integration of artificial intelligence (AI), quantum computing, and semiconductor technology offers improved innovation to redefine computational power and capabilities. As AI drives advances in machine learning and data processing, quantum computing revolutionizes problem-solving with its ability to handle complex calculations at improved speeds. Advancements in semiconductor technology push the limits of processing efficiency and miniaturization. Continued exploration on this convergence may accelerate breakthroughs in various fields such as cryptography, material science, and healthcare. Integration of AI, Quantum Computing, and Semiconductor Technology explores the intersection of artificial intelligence (AI) and semiconductor technology within the context of quantum computing. It offers a comprehensive analysis of the current advancements, challenges, and potential applications resulting from this convergence. This book covers topics such as cyber security, healthcare monitoring, and machine learning, and is a useful resource for computer engineers, energy scientists, business owners, healthcare administrators, environmental scientists, academicians, and researchers.
Publisher: IGI Global
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 534
Book Description
The integration of artificial intelligence (AI), quantum computing, and semiconductor technology offers improved innovation to redefine computational power and capabilities. As AI drives advances in machine learning and data processing, quantum computing revolutionizes problem-solving with its ability to handle complex calculations at improved speeds. Advancements in semiconductor technology push the limits of processing efficiency and miniaturization. Continued exploration on this convergence may accelerate breakthroughs in various fields such as cryptography, material science, and healthcare. Integration of AI, Quantum Computing, and Semiconductor Technology explores the intersection of artificial intelligence (AI) and semiconductor technology within the context of quantum computing. It offers a comprehensive analysis of the current advancements, challenges, and potential applications resulting from this convergence. This book covers topics such as cyber security, healthcare monitoring, and machine learning, and is a useful resource for computer engineers, energy scientists, business owners, healthcare administrators, environmental scientists, academicians, and researchers.
Photoconductivity and Photoconductive Materials, 2 Volume Set
Author: Safa O. Kasap
Publisher: John Wiley & Sons
ISBN: 1119579112
Category : Technology & Engineering
Languages : en
Pages : 919
Book Description
Explore an authoritative resource with coverage of foundational concepts of photoconductivity and photoconductive materials In Photoconductivity and Photoconductive Materials, Professor Kasap delivers a definitive guide to the basic principles of photoconductivity and a selection of present topical photoconductive materials. Divided into two parts, the set begins with basic concepts and definitions and coverage of characterization using steady state, transient and modulated photoconductivity techniques, including the novel charge extraction by linearly increasing voltage (CELIV) method The physics of terahertz photoconductivity and fundamentals of organic semiconductors lsois are also covered. Part Two of the set starts with a comprehensive review of a wide range of photoconductive materials and then focuses on some of the most important photoconductors, including hydrogenated amorphous silicon, cadmium mercury telluride, various x-ray photoconductors, diamond films, metal halide perovskites, nanowires and quantum dots. Photoconductive antenna application is also included. Filled with contributions from leading authors in the field, this book also offers: A thorough introduction to the characterization of semiconductors from photoconductivity techniques, including uniform illumination and photocarrier grating techniques Comprehensive explorations of organic photoconductors, including photogeneration, transport, and applications in printing Practical discussions of time-of-flight transient photoconductivity, including experimental techniques and interpretation In-depth examinations of transient photoconductivity of organic semiconducting films and novel transient photoconductivity techniques Perfect for research physicists, materials scientists, and electrical engineers, Photoconductivity and Photoconductive Materials is also an indispensable resource for postgraduate and senior undergraduate students working in the area of optoelectronic materials, as well as researchers working in industry.
Publisher: John Wiley & Sons
ISBN: 1119579112
Category : Technology & Engineering
Languages : en
Pages : 919
Book Description
Explore an authoritative resource with coverage of foundational concepts of photoconductivity and photoconductive materials In Photoconductivity and Photoconductive Materials, Professor Kasap delivers a definitive guide to the basic principles of photoconductivity and a selection of present topical photoconductive materials. Divided into two parts, the set begins with basic concepts and definitions and coverage of characterization using steady state, transient and modulated photoconductivity techniques, including the novel charge extraction by linearly increasing voltage (CELIV) method The physics of terahertz photoconductivity and fundamentals of organic semiconductors lsois are also covered. Part Two of the set starts with a comprehensive review of a wide range of photoconductive materials and then focuses on some of the most important photoconductors, including hydrogenated amorphous silicon, cadmium mercury telluride, various x-ray photoconductors, diamond films, metal halide perovskites, nanowires and quantum dots. Photoconductive antenna application is also included. Filled with contributions from leading authors in the field, this book also offers: A thorough introduction to the characterization of semiconductors from photoconductivity techniques, including uniform illumination and photocarrier grating techniques Comprehensive explorations of organic photoconductors, including photogeneration, transport, and applications in printing Practical discussions of time-of-flight transient photoconductivity, including experimental techniques and interpretation In-depth examinations of transient photoconductivity of organic semiconducting films and novel transient photoconductivity techniques Perfect for research physicists, materials scientists, and electrical engineers, Photoconductivity and Photoconductive Materials is also an indispensable resource for postgraduate and senior undergraduate students working in the area of optoelectronic materials, as well as researchers working in industry.