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Author: Juras Banys
Publisher: John Wiley & Sons
ISBN: 3527837167
Category : Technology & Engineering
Languages : en
Pages : 404
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Book Description
Van der Waals Ferroelectrics A comprehensive guide to a unique class of compounds with a variety of applications Since the discovery of graphene, there has been intensive interest in two-dimensional materials with similar electronic and industrial applications. The limitations on the usefulness of graphene itself, however, have powered the search for other materials with similar properties. One such class of materials, the phosphorous chalcogenides, has proven a particularly fruitful avenue for research, due to the favorable band gap and ferroelectric properties of these materials. Van der Waals Ferroelectrics provides, for the first time, a detailed overview of this highly relevant and sought-after class of materials, also known as transition metal chalcogenophosphates (TMCPs). Focusing on physical properties, the book explores the complex physics underlying these compounds as well as the unique characteristics that have driven their ever-increasing importance to the materials science community. Van der Waals Ferroelectrics readers will also find: Both computational and experimental perspectives on TCMP compounds In-depth discussion of the properties essential to the design and construction of devices like sensors, actuators, memory chips, and capacitors The first detailed review of the functional properties of TCMP compounds, such as ferrielectricity, electrostriction, and ionic conductivity Van der Waals Ferroelectrics is a useful reference for materials scientists, inorganic chemists, solid state chemists, solid state physicists, electrical engineers, and libraries supporting these professions.
Author: Juras Banys
Publisher: John Wiley & Sons
ISBN: 3527837167
Category : Technology & Engineering
Languages : en
Pages : 404
Get Book Here
Book Description
Van der Waals Ferroelectrics A comprehensive guide to a unique class of compounds with a variety of applications Since the discovery of graphene, there has been intensive interest in two-dimensional materials with similar electronic and industrial applications. The limitations on the usefulness of graphene itself, however, have powered the search for other materials with similar properties. One such class of materials, the phosphorous chalcogenides, has proven a particularly fruitful avenue for research, due to the favorable band gap and ferroelectric properties of these materials. Van der Waals Ferroelectrics provides, for the first time, a detailed overview of this highly relevant and sought-after class of materials, also known as transition metal chalcogenophosphates (TMCPs). Focusing on physical properties, the book explores the complex physics underlying these compounds as well as the unique characteristics that have driven their ever-increasing importance to the materials science community. Van der Waals Ferroelectrics readers will also find: Both computational and experimental perspectives on TCMP compounds In-depth discussion of the properties essential to the design and construction of devices like sensors, actuators, memory chips, and capacitors The first detailed review of the functional properties of TCMP compounds, such as ferrielectricity, electrostriction, and ionic conductivity Van der Waals Ferroelectrics is a useful reference for materials scientists, inorganic chemists, solid state chemists, solid state physicists, electrical engineers, and libraries supporting these professions.
Author: Xiangping Zhang
Publisher: OAE Publishing Inc.
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 12
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Book Description
Van der Waals (vdW) ferroelectric CuInP2S6 (CIPS) has attracted intense research interest due to its unique ferroelectric properties that make it promising for potential applications in flexible electronic devices. A mechanical mean, or so-called strain gradient engineering, has been proven as an effective method to modulate its ferroelectric properties, but the key parameter elastic constants Cij has not been accurately measured. Here, we utilized nanoindentation and contact resonance atomic force microscopy (CR-AFM) techniques to measure the elastic modulus on the (001) plane of nanoscale phase separated CuInP2S6-In4/3P2S6 (CIPS-IPS). The Young’s modulus of the CIPS was slightly less than that of the IPS. Density Functional Theory was introduced to obtain the accurate full elastic constant Cij of CIPS and IPS, and we deduced their respective Young’s moduli, all of which are in good agreement with our experimental values. We further discovered the asymmetrical domain switching and proposed an ion-mediated domain switching model. The results provide a reliable experimental reference for strain gradient engineering in the phase field simulation in CIPS-IPS.
Author: Xiaotian Wang
Publisher: Frontiers Media SA
ISBN: 2889664864
Category : Science
Languages : en
Pages : 151
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Book Description
Author: Indre Urbanaviciute
Publisher: Linköping University Electronic Press
ISBN: 9179299733
Category :
Languages : en
Pages : 121
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Book Description
Ferroelectric materials are known and valued for their multifunctionality arising from the possibility to perturb the remnant ferroelectric polarization by electric field, temperature and/or mechanical stimuli. While inorganic ferroelectrics dominate the current market, their organic counterparts may provide highly desired properties like eco-friendliness, easy processability and flexibility, concomitantly opening unique opportunities to combine multiple functionalities into a single compound that facilitates unprecedented device concepts and designs. Supramolecular organic ferroelectrics of columnar discotic type, that are the topic of this thesis, offer additional advantages related to their strong hierarchical self-assembly and easy tunability by molecular structure modifications, allowing optimization of ferroelectric characteristics and their hybridization with, e.g., semiconductivity. This not only leads to textbook ferroelectric materials that can be used as model systems to understand the general behaviour of ferroics, but also gives rise to previously unobserved effects stemming from the interplay of different functionalities. The core-shell structure of the molecules under the scope enables multiple pathways forrational design by molecular structure modification. This was firstly pursued via peripheral tail engineering on an archetypal self-assembling ferroelectric trialkylbenzene-1,3,5-tricarboxamide (BTA). We found that by shortening the alkyl chain length all the ferroelectric properties can be continuously tuned. In particular, changing the tail from C18H37 to C6H13causes an increase in depolarization activation energy (~0.8 eV to ~1.55 eV), coercive field(~25 V/?m to ~50 V/?m) and remnant polarization (~20 mC/m2 to ~60 mC/m2). The combination of the mentioned characteristics resulted in a record polarization retention time of close to 3 months at room temperature for capacitor devices of the material having the shortest alkyl chain – BTA-C6, which at the time of writing was one of the best results for liquid-crystalline ferroelectrics. Taking one step further, we experimentally demonstrated how introduction of branched-tailsubstituents results in materials with a wide operating temperature range and a data retention time of more than 10 years in thin-film solution-processed capacitor devices already atelevated temperatures with no measurable depolarization at room temperature. The observed differences between linear- and branched-tail compounds were analysed using density functional theory (DFT) and molecular dynamics (MD) simulations. We concluded that morphological factors like improved packing quality and reduced disorder, rather than electrostatic interactions or intra/inter-columnar steric hindrance, underlay the superior properties of the branched-tailed BTAs. Synergistic effects upon blending of compounds with branched and linear sidechains were shown to further improve the materials’ characteristics. Exploiting the excellent ferroelectric performance and the well-defined nanostructure of BTAs, we experimentally determined the Preisach (hysteron) distribution of BTA and confronted it to the one obtained for the semi-crystalline P(VDF:TrFE). This allowed to elucidate how the broadening of the Preisach distribution relates to the materials’ morphology. We further connected the experimental Preisach distribution to the corresponding microscopic switching kinetics. We argue that the combination of the two underlays the macroscopic dispersive switching kinetics as commonly observed for practical ferroelectrics. These insights lead to guidelines for further advancement of ferroelectric materials both for conventional and multi-bit data storage applications. Although having strong differences in the Preisach distribution, BTA and P(VDF:TrFE) both demonstrate negative piezoelectricity – a rare anomalous phenomenon which is characteristic to two-phased materials and has never been observed in small-molecular ferroelectrics. We measured a pronounced negative piezoelectric effect in a whole family of BTAs and revealed its tunability by mesogenic tail substitution and structural disorder. While the large- and small-signal strain in highly ordered thin-film BTA capacitor devices are dominated by intrinsic contributions and originates from piezostriction, rising disorder introduces additional extrinsic factors that boost the large-signal d33 up to ?20 pm/V in short-tailed molecules. Interestingly, homologues with longer mesogenic tails show a large-signal electromechanical response that is dominated by the quadratic Maxwell strain with significant mechanical softening upon polarization switching, whereas the small-signal strain remains piezostrictive. Molecular dynamics and DFT calculations both predict a positive d33 for defect-free BTA stacks. Hence, the measured negative macroscopic d33 is attributed to the presence of structural defects that enable the dimensional effect to dominate the piezoelectric response of BTA thin films. The true multifunctionality of supramolecular discotics manifests when large semiconducting cores surrounded by field-switchable strongly polar moieties are introduced in the structure. We showed how the combination of switchable dipolar side groups and the semiconducting core of the newly synthetized C3-symmetric benzotristhiophene molecule (BTTTA) leads to an ordered columnar material showing continuous tunability from injection- to bulk-limited conductivity modulation. Both these resistive switching mechanisms may lead to the next-generation high-density non-volatile rewritable memory devices with high on/off ratios and non-destructive data readout – the element that has been desperately sought after to enablefully organic flexible electronics. Utbredd elektronisering och det högst aktuella fenomenet sakernas internet (Internet of Things) ställer höga krav på nästa generations elektroniska system. Produkterna ska vara lätta att framställa med miljövänliga metoder, låg kostnadsproduktion och skalbarhet (t. ex. tryckt elektronik), återvinningsbarhet eller biologisk nedbrytbarhet (gällande engångselektronik), mekanisk flexibilitet (formbara bärbara system), kemisk stabilitet, till och med biokompatibilitet (t. ex. implanterbara system) – dessa är bara några utmaningar som den kommande tekniken behöver övervinna. Organiska material kan åstadkomma alla dessa önskade egenskaper, samtidigt som man skapar unika möjligheter att kombinera flera funktionaliteter till en enda sammansättning som underlättar nydanande komponenter och design. Ferroelektriska material kännetecknas av pyroelektriska, piezoelektriska och dielektriska egenskaper. Denna mångsidighet möjliggör icke-flyktiga minnesenheter, temperatur- och taktila sensorer, olika transduktorer och manöverdon, som alla baseras på förändringar av den ferroelektriska restpolarisationen genom fält-, temperatur- och / eller mekaniska stimuleringar. Diskformade supramolekylära organiska ferroelektriska ämnen ger ytterligare fördelar tack vare deras modifierbara molekylstrukturer och starka hierarkiska självorganisation som staplar diskarna i kolumner. På detta sätt kan lättbearbetningsbara organiska ferroelektriska material med hög restpolarisering och extrem datalagring konstrueras molekylärt. På grund av deras väldefinierade nanostrukturer kan sådana material användas som modellsystem för att förstå det allmänna beteendet hos polykristallina ferroelektriska material. De uppvisar också ensällsynt negativ piezoelektricitet som är atypisk för små molekylära material och härrör från deras komplexa nanostruktur. Den verkliga multifunktionaliteten hos diskformade supramolekylära ämnen framträder när stora halvledande kärnor omgivna av starkt polära delar, som är växlingsbara via ett elektriskt fält, introduceras i strukturen. Oöverträffad resistiv omkoppling, inducerad av den asymmetriska laddningstransporten beroende på polarisationsriktningen med rekordhög datalagringstid, upptäcktes efter optimering av molekylstrukturen. Även en konceptuellt enklare resistiv omkopplingsmekanism bunden till en modulation av laddningsinjektionsbarriären genom gränssnittsdipolerna observerades. Båda dessa fenomen kan bidra till nästa generations icke-flyktiga överskrivningsbara minnesenheter med högdensitet, stora på av-förhållanden, och icke-destruktiv dataavläsning – vilket är kritiskt för att möjliggöra helt organisk flexibel elektronik.
Author: James F. Scott
Publisher: Springer Science & Business Media
ISBN: 3662043076
Category : Technology & Engineering
Languages : en
Pages : 255
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Book Description
This is the first comprehensive book on ferroelectric memories which contains chapters on device design, processing, testing, and device physics, as well as on breakdown, leakage currents, switching mechanisms, and fatigue. State-of-the-art device designs are included and illustrated among the books many figures. More than 500 up-to-date references and 76 problems make it useful as a research reference for physicists, engineers and students.
Author: Astrid Weston
Publisher: Springer Nature
ISBN: 3031120930
Category : Technology & Engineering
Languages : en
Pages : 148
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Book Description
This thesis provides the first atomic length-scale observation of the structural transformation (referred to as lattice reconstruction) that occurs in moiré superlattices of twisted bilayer transition metal dichalcogenides (TMDs) at low (θ 2 ̊) twist angles. Such information is essential for the fundamental understanding of how manipulating the rotational twist-angle between two adjacent 2-dimensional crystals subsequently affects their optical and electrical properties./ppStudies using Scanning transmission electron microscopy (STEM), a powerful tool for atomic-scale imaging, were limited due to the complexity of the (atomically-thin) sample fabrication requirements. This work developed a unique way to selectively cut and re-stack monolayers of TMDs with a controlled rotational twist angle which could then be easily suspended on a TEM grid to meet the needs of the atomically thin sample requirements. The fabrication technique enabled the study of the two common stacking-polytypes including 3R and 2H (using MoS2 and WS2 as the example) as well as their structural evolution with decreasing twist-angle./ppAtomic-scale studies were followed by a comprehensive investigation of their electronic properties using scanning probe microscopy and electrical transport measurements of the artificially-engineered structures. The electronic structure of two common stacking-polytypes (3R and 2H) were strikingly different, as revealed by conductive atomic force microscopy. Further studies focused on the 3R-stacking polytype to reveal room-temperature out-of-plane ferroelectricity using tools such as kelvin probe force microscopy, scanning electron microscopy and electrical transport measurements. This work highlights that the unique intrinsic properties of TMDs (i.e. semiconductors with strongly light-matter interaction) combined with the additional twisted degree-of-freedom has great potential to create atomically thin transistors/LEDs with built-in memory storage functions and will further aid in the development of the next generation of optoelectronics.
Author: Anuj Kumar
Publisher: CRC Press
ISBN: 1040113583
Category : Science
Languages : en
Pages : 335
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Book Description
Two-dimensional semiconducting materials (2D-SCMs) are the subject of intensive study in the fields of photonics and optoelectronics because of their unusual optical, electrical, thermal, and mechanical properties. The main objective of 2D Semiconducting Materials for Electronic, Photonic, and Optoelectronic Devices is to provide current, state-of-the-art knowledge of two-dimensional semiconducting materials for various applications. Two-dimensional semiconducting materials are the basic building blocks for making photodiodes, light-emitting diodes, light-detecting devices, data storage, telecommunications, and energy-storage devices. When it comes to two-dimensional semiconducting materials, electronic, photonic, and optoelectronic applications, as well as future plans for improving performance, no modern book covers as much ground. The planned book will fill such gaps by offering a comprehensive analysis of two-dimensional semiconducting materials. This book covers a range of advanced 2D materials, their fundamentals, and the chemistry for many emerging applications. All the chapters are covered by experts in these areas around the world, making this a suitable textbook for students and providing new guidelines to researchers and industries. • Covers topics such as fundamentals and advanced knowledge of two-dimensional semiconducting materials • Provides details about the recent methods used for the synthesis, characterization, and applications of two-dimensional semiconducting materials • Covers the state-of-the-art development in two-dimensional semiconducting materials and their emerging applications This book provides directions to students, scientists, and researchers in semiconductors and related disciplines to help them better understand the physics, characteristics, and applications of 2D semiconductors.
Author: Phaedon Avouris
Publisher: Cambridge University Press
ISBN: 1316738132
Category : Technology & Engineering
Languages : en
Pages : 521
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Book Description
Learn about the most recent advances in 2D materials with this comprehensive and accessible text. Providing all the necessary materials science and physics background, leading experts discuss the fundamental properties of a wide range of 2D materials, and their potential applications in electronic, optoelectronic and photonic devices. Several important classes of materials are covered, from more established ones such as graphene, hexagonal boron nitride, and transition metal dichalcogenides, to new and emerging materials such as black phosphorus, silicene, and germanene. Readers will gain an in-depth understanding of the electronic structure and optical, thermal, mechanical, vibrational, spin and plasmonic properties of each material, as well as the different techniques that can be used for their synthesis. Presenting a unified perspective on 2D materials, this is an excellent resource for graduate students, researchers and practitioners working in nanotechnology, nanoelectronics, nanophotonics, condensed matter physics, and chemistry.
Author: Zongyu Huang
Publisher: CRC Press
ISBN: 1000562840
Category : Science
Languages : en
Pages : 166
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Book Description
Monoelemental 2D materials called Xenes have a graphene-like structure, intra-layer covalent bond, and weak van der Waals forces between layers. Materials composed of different groups of elements have different structures and rich properties, making Xenes materials a potential candidate for the next generation of 2D materials. 2D Monoelemental Materials (Xenes) and Related Technologies: Beyond Graphene describes the structure, properties, and applications of Xenes by classification and section. The first section covers the structure and classification of single-element 2D materials, according to the different main groups of monoelemental materials of different components and includes the properties and applications with detailed description. The second section discusses the structure, properties, and applications of advanced 2D Xenes materials, which are composed of heterogeneous structures, produced by defects, and regulated by the field. Features include: Systematically detailed single element materials according to the main groups of the constituent elements Classification of the most effective and widely studied 2D Xenes materials Expounding upon changes in properties and improvements in applications by different regulation mechanisms Discussion of the significance of 2D single-element materials where structural characteristics are closely combined with different preparation methods and the relevant theoretical properties complement each other with practical applications Aimed at researchers and advanced students in materials science and engineering, this book offers a broad view of current knowledge in the emerging and promising field of 2D monoelemental materials.
Author: Michael E. Levinshtein
Publisher: John Wiley & Sons
ISBN: 9780471358275
Category : Technology & Engineering
Languages : en
Pages : 220
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Book Description
Containing the most reliable parameter values for each of these semiconductor materials, along with applicable references, these data are organized in a structured, logical way for each semiconductor material. * Reviews traditional semiconductor materials as well as new, advanced semiconductors. * Essential authoritative handbook on the properties of semiconductor materials.
