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Author: Meiyong Liao
Publisher: Elsevier
ISBN: 0128172568
Category : Technology & Engineering
Languages : en
Pages : 506
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Book Description
Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride. - Provides a one-stop resource on the most promising ultra-wide bandgap semiconducting materials, including high-Al-content AlGaN, diamond, ß-Ga2O3, boron nitrides, and low-dimensional materials - Presents comprehensive coverage, from materials growth and properties, to device design, fabrication and performance - Features the most relevant applications, including power electronics, RF electronics and DUV optoelectronics
Author: Meiyong Liao
Publisher: Elsevier
ISBN: 0128172568
Category : Technology & Engineering
Languages : en
Pages : 506
Get Book Here
Book Description
Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride. - Provides a one-stop resource on the most promising ultra-wide bandgap semiconducting materials, including high-Al-content AlGaN, diamond, ß-Ga2O3, boron nitrides, and low-dimensional materials - Presents comprehensive coverage, from materials growth and properties, to device design, fabrication and performance - Features the most relevant applications, including power electronics, RF electronics and DUV optoelectronics
Author: Kiyoshi Takahashi
Publisher: Springer Science & Business Media
ISBN: 3540472355
Category : Technology & Engineering
Languages : en
Pages : 481
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Book Description
This book offers a comprehensive overview of the development, current state, and future prospects of wide bandgap semiconductor materials and related optoelectronics devices. With 901 references, 333 figures and 21 tables, this book will serve as a one-stop source of knowledge on wide bandgap semiconductors and related optoelectronics devices.
Author:
Publisher: Academic Press
ISBN: 0128228717
Category : Science
Languages : en
Pages : 482
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Book Description
Ultrawide Bandgap Semiconductors, Volume 107 in the Semiconductors and Semimetals series, highlights the latest breakthrough in fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials and devices based on gallium oxide, aluminium nitride, boron nitride, and diamond. It includes important topics on the materials growth, characterization, and device applications of UWBG materials, where electronic, photonic, thermal and quantum properties are all thoroughly explored. - Contains the latest breakthrough in fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials and devices - Provides a comprehensive presentation that covers the fundamentals of materials growth and characterization, as well as design and performance characterization of state-of-the-art UWBG materials, structures, and devices - Presents an in-depth discussion on electronic, photonic, thermal, and quantum technologies based on UWBG materials
Author: Yuji Zhao
Publisher: Elsevier
ISBN: 0128228709
Category : Science
Languages : en
Pages : 480
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Book Description
Ultrawide Bandgap Semiconductors, Volume 107 in the Semiconductors and Semimetals series, highlights the latest breakthrough in fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials and devices based on gallium oxide, aluminium nitride, boron nitride, and diamond. It includes important topics on the materials growth, characterization, and device applications of UWBG materials, where electronic, photonic, thermal and quantum properties are all thoroughly explored. Contains the latest breakthrough in fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials and devices Provides a comprehensive presentation that covers the fundamentals of materials growth and characterization, as well as design and performance characterization of state-of-the-art UWBG materials, structures, and devices Presents an in-depth discussion on electronic, photonic, thermal, and quantum technologies based on UWBG materials
Author: Masataka Higashiwaki
Publisher: Springer Nature
ISBN: 3030371530
Category : Technology & Engineering
Languages : en
Pages : 768
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Book Description
This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga2O3). Ga2O3 has been attracting much attention due to its excellent materials properties. It features an extremely large bandgap of greater than 4.5 eV and availability of large-size, high-quality native substrates produced from melt-grown bulk single crystals. Ga2O3 is thus a rising star among ultra-wide-bandgap semiconductors and represents a key emerging research field for the worldwide semiconductor community. Expert chapters cover physical properties, synthesis, and state-of-the-art applications, including materials properties, growth techniques of melt-grown bulk single crystals and epitaxial thin films, and many types of devices. The book is an essential resource for academic and industry readers who have an interest in, or plan to start, a new R&D project related to Ga2O3.
Author: Safa Kasap
Publisher: Springer
ISBN: 331948933X
Category : Technology & Engineering
Languages : en
Pages : 1536
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Book Description
The second, updated edition of this essential reference book provides a wealth of detail on a wide range of electronic and photonic materials, starting from fundamentals and building up to advanced topics and applications. Its extensive coverage, with clear illustrations and applications, carefully selected chapter sequencing and logical flow, makes it very different from other electronic materials handbooks. It has been written by professionals in the field and instructors who teach the subject at a university or in corporate laboratories. The Springer Handbook of Electronic and Photonic Materials, second edition, includes practical applications used as examples, details of experimental techniques, useful tables that summarize equations, and, most importantly, properties of various materials, as well as an extensive glossary. Along with significant updates to the content and the references, the second edition includes a number of new chapters such as those covering novel materials and selected applications. This handbook is a valuable resource for graduate students, researchers and practicing professionals working in the area of electronic, optoelectronic and photonic materials.
Author: Debdeep Jena
Publisher: Springer Science & Business Media
ISBN: 0387368310
Category : Science
Languages : en
Pages : 523
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Book Description
Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications presents the latest understanding of the solid state physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of wurtzite compound semiconductors, and associated piezo-electric effects in strained thin film heterostructures. These heterostructures are used in wide band gap semiconductor based sensors, in addition to various electronic and opto-electronic semiconductor devices. The book covers the ab initio theory of polarization in cubic and hexagonal semiconductors, growth of thin film GaN, GaN/AlGaN GaAlN/ AlGaInN, and other nitrides, and SiC heterostructures. It discusses the effects of spontaneous and piezoelectric polarization on band diagrams and electronic properties of abrupt and compositionally graded heterostructures, electronic characterization of polarization-induced charge distributions by scanning-probe spectroscopies, and gauge factors and strain effects. In addition, polarization in extended defects, piezo-electric strain/charge engineering, and application to device design and processing are covered. The effects of polarization on the fundamental electron transport properties, and on the basic optical transitions are described. The crucial role of polarization in devices such as high electron mobility transistors (HEMTs) and light-emitting diodes (LEDs) is covered. The chapters are authored by professors and researchers in the fields of physics, applied physics and electrical engineering, who worked for 5 years under the "Polarization Effects in Semiconductors" DOD funded Multi Disciplinary University Research Initiative. This book will be of interest to graduate students and researchers working in the field of wide-bandgap semiconductor physics and their device applications. It will also be useful for practicing engineers in the field of wide-bandgap semiconductor device research and development.
Author: Stephen Pearton
Publisher: Elsevier
ISBN: 0128145226
Category : Technology & Engineering
Languages : en
Pages : 510
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Book Description
Gallium Oxide: Technology, Devices and Applications discusses the wide bandgap semiconductor and its promising applications in power electronics, solar blind UV detectors, and in extreme environment electronics. It also covers the fundamental science of gallium oxide, providing an in-depth look at the most relevant properties of this materials system. High quality bulk Ga2O3 is now commercially available from several sources and n-type epi structures are also coming onto the market. As researchers are focused on creating new complex structures, the book addresses the latest processing and synthesis methods. Chapters are designed to give readers a complete picture of the Ga2O3 field and the area of devices based on Ga2O3, from their theoretical simulation, to fabrication and application. - Provides an overview of the advantages of the gallium oxide materials system, the advances in in bulk and epitaxial crystal growth, device design and processing - Reviews the most relevant applications, including photodetectors, FETs, FINFETs, MOSFETs, sensors, catalytic applications, and more - Addresses materials properties, including structural, mechanical, electrical, optical, surface and contact
Author: Takafumi Yao
Publisher: Springer Science & Business Media
ISBN: 3540888470
Category : Technology & Engineering
Languages : en
Pages : 525
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Book Description
This is a unique book devoted to the important class of both oxide and nitride semiconductors. It covers processing, properties and applications of ZnO and GaN. The aim of this book is to provide the fundamental and technological issues for both ZnO and GaN.
Author: Satoshi Koizumi
Publisher: Woodhead Publishing
ISBN: 0081021844
Category : Technology & Engineering
Languages : en
Pages : 468
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Book Description
Power Electronics Device Applications of Diamond Semiconductors presents state-of-the-art research on diamond growth, doping, device processing, theoretical modeling and device performance. The book begins with a comprehensive and close examination of diamond crystal growth from the vapor phase for epitaxial diamond and wafer preparation. It looks at single crystal vapor deposition (CVD) growth sectors and defect control, ultra high purity SC-CVD, SC diamond wafer CVD, heteroepitaxy on Ir/MqO and needle-induced large area growth, also discussing the latest doping and semiconductor characterization methods, fundamental material properties and device physics. The book concludes with a discussion of circuits and applications, featuring the switching behavior of diamond devices and applications, high frequency and high temperature operation, and potential applications of diamond semiconductors for high voltage devices. - Includes contributions from today's most respected researchers who present the latest results for diamond growth, doping, device fabrication, theoretical modeling and device performance - Examines why diamond semiconductors could lead to superior power electronics - Discusses the main challenges to device realization and the best opportunities for the next generation of power electronics
