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Author: C. Claeys
Publisher: The Electrochemical Society
ISBN: 1607682613
Category :
Languages : en
Pages : 429
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Book Description
Author: C. Claeys
Publisher: The Electrochemical Society
ISBN: 1607682613
Category :
Languages : en
Pages : 429
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Book Description
Author: Mikhail Baklanov
Publisher: John Wiley & Sons
ISBN: 1119966868
Category : Technology & Engineering
Languages : en
Pages : 616
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Book Description
Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.
Author: J. Murota
Publisher: The Electrochemical Society
ISBN: 1607688212
Category :
Languages : en
Pages : 325
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Book Description
Author: D. Harame
Publisher: The Electrochemical Society
ISBN: 1566778255
Category : Science
Languages : en
Pages : 1066
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Book Description
Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds has become a key component in the arsenal in improving semiconductor performance. This symposium discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.
Author: D. Harame
Publisher: The Electrochemical Society
ISBN: 1607685434
Category :
Languages : en
Pages : 1042
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Book Description
Author: Chih-Hang Tung
Publisher: John Wiley & Sons
ISBN: 9780471457725
Category : Technology & Engineering
Languages : en
Pages : 688
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Book Description
More than 1,100 TEM images illustrate the science of ULSI The natural outgrowth of VLSI (Very Large Scale Integration), Ultra Large Scale Integration (ULSI) refers to semiconductor chips with more than 10 million devices per chip. Written by three renowned pioneers in their field, ULSI Semiconductor Technology Atlas uses examples and TEM (Transmission Electron Microscopy) micrographs to explain and illustrate ULSI process technologies and their associated problems. The first book available on the subject to be illustrated using TEM images, ULSI Semiconductor Technology Atlas is logically divided into four parts: * Part I includes basic introductions to the ULSI process, device construction analysis, and TEM sample preparation * Part II focuses on key ULSI modules--ion implantation and defects, dielectrics and isolation structures, silicides/salicides, and metallization * Part III examines integrated devices, including complete planar DRAM, stacked cell DRAM, and trench cell DRAM, as well as SRAM as examples for process integration and development * Part IV emphasizes special applications, including TEM in advanced failure analysis, TEM in advanced packaging development and UBM (Under Bump Metallization) studies, and high-resolution TEM in microelectronics This innovative guide also provides engineers and managers in the microelectronics industry, as well as graduate students, with: * More than 1,100 TEM images to illustrate the science of ULSI * A historical introduction to the technology as well as coverage of the evolution of basic ULSI process problems and issues * Discussion of TEM in other advanced microelectronics devices and materials, such as flash memories, SOI, SiGe devices, MEMS, and CD-ROMs
Author: Badih El-Kareh
Publisher: Springer Science & Business Media
ISBN: 0387690107
Category : Technology & Engineering
Languages : en
Pages : 614
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Book Description
Silicon Devices and Process Integration covers state-of-the-art silicon devices, their characteristics, and their interactions with process parameters. It serves as a comprehensive guide which addresses both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. The book is compiled from the author’s industrial and academic lecture notes and reflects years of experience in the development of silicon devices. Features include: A review of silicon properties which provides a foundation for understanding the device properties discussion, including mobility-enhancement by straining silicon; State-of-the-art technologies on high-K gate dielectrics, low-K dielectrics, Cu interconnects, and SiGe BiCMOS; CMOS-only applications, such as subthreshold current and parasitic latch-up; Advanced Enabling processes and process integration. This book is written for engineers and scientists in semiconductor research, development and manufacturing. The problems at the end of each chapter and the numerous charts, figures and tables also make it appropriate for use as a text in graduate and advanced undergraduate courses in electrical engineering and materials science.
Author: Androula G. Nassiopoulou
Publisher: World Scientific
ISBN: 9789812810861
Category : Technology & Engineering
Languages : en
Pages : 198
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Book Description
This volume contains papers on the following: CMOS devices and devices based on compound semiconductors; processing; silicon integrated technology and integrated circuit design; quantum physics; nanotechnology; nanodevices, sensors and microsystems. The latest news and future challenges in these fields are presented in invited papers. Contents: Nanotechnology and Quantum Devices: A New Strategy for In Situ Synthesis of Oligonucleotides Arrays for DNA Chip Technology (F Vinet et al.); Magnetotransport Properties of La-Ca-Mn-O Multilayers (C Christides); Charge Effects and Related Transport Phenomena in Nanosize Silicon/Insulator Structures (J A Berashevich et al.); Thermoelectric Properties of Composite Fermions (M Tsaousidou & G P Triberis); Design and Fabrication of Supported-Metal Catalysts Through Nanotechnology (I Zuburtikudis); Ground State Electronic Structure of Small Si Quantum Dots (C S Garoufalis et al.); Processing: Solid Interface Studies with Applications in Microelectronics (S Kennou et al.); Rapid Thermal Annealing of Arsenic Implanted Silicon for the Formation of Ultra Shallow n+p Junctions (N Georgoulas et al.); Simulation of the Formation and Characterization of Roughness in Photoresists (G P Patsis et al.); Development of a New Low Energy Electron Beam Lithography Simulation Tool (D Velessiotis et al.); CMOS Devices and Devices Based on Compound Semiconductors: Microhardness Characterization of Epitaxially Grown GaN Films. Effect of Light Ion Implantation (P Kavouras et al.); Multiple Quantum Well Solar Cells Under AM1 and Concentrated Sunlight (E Aperathitis et al.); The Influence of Silicon Interstitial Clustering on the Reverse Short Channel Effect (C Tsamis & D Tsoukalas); Noise Modeling of Interdigitated Gate CMOS Devices (E F Tsakas & A N Birbas); High Precision CMOS Euclidean Distance Computing Circuit (G Fikos & S Siskos); Microsystems: Alternative Signal Extraction Technique for Miniature Fluxgates (P D Dimitropoulos & J N Avaritsiotis); Silicon Capacitive Pressure Sensors and Pressure Switches Fabricated Using Silicon Fusion Bonding (S Koliopoulou et al.); Microsystems for Acoustical Signal Detection Applications (D K Fragoulis & J N Avaritsiotis); Capillary Format Bioanalytical Microsystems (K Misiakos et al.); Effectiveness of Local Thermal Isolation by Porous Silicon in a Silicon Thermal Sensor (D Pagonis et al.); Silicon Integrated Technology and Integrated Circuit Design: MOSFET Model Benchmarking Using a Novel CAD Tool (N A Nastos & Y Papananos); Power Amplifier Linearisation Techniques: An Overview (N Naskas & Y Papananos); The Design of a Ripple Carry Adiabatic Adder (V Pavlidis et al.); Maximum Power Estimation in CMOS VLSI Circuits (N E Evmorfopoulos et al.); Power Dissipation Considerations in Low-Voltage CMOS Circuits (A A Hatzopoulos); Microelectronics Networks/Technology Transfer and Exploitation: EURACCESS: A European Platform for Access to CMOS Processing (C L Claeys); MMN: Greek Network on Microelectronics, Microsystems and Nanotechnology (A G Nassiopoulou); Simulations of Molecular Electronics (S T Pantelides et al.); and other papers. Readership: Researchers, academics, industrialists and undergraduates in microelectronics, nanoscience, materials science, applied physics and condensed matter physics.
Author: Rohit Sharma
Publisher: CRC Press
ISBN: 1351831593
Category : Technology & Engineering
Languages : en
Pages : 328
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Book Description
Three-dimensional (3D) integration of microsystems and subsystems has become essential to the future of semiconductor technology development. 3D integration requires a greater understanding of several interconnected systems stacked over each other. While this vertical growth profoundly increases the system functionality, it also exponentially increases the design complexity. Design of 3D Integrated Circuits and Systems tackles all aspects of 3D integration, including 3D circuit and system design, new processes and simulation techniques, alternative communication schemes for 3D circuits and systems, application of novel materials for 3D systems, and the thermal challenges to restrict power dissipation and improve performance of 3D systems. Containing contributions from experts in industry as well as academia, this authoritative text: Illustrates different 3D integration approaches, such as die-to-die, die-to-wafer, and wafer-to-wafer Discusses the use of interposer technology and the role of Through-Silicon Vias (TSVs) Presents the latest improvements in three major fields of thermal management for multiprocessor systems-on-chip (MPSoCs) Explores ThruChip Interface (TCI), NAND flash memory stacking, and emerging applications Describes large-scale integration testing and state-of-the-art low-power testing solutions Complete with experimental results of chip-level 3D integration schemes tested at IBM and case studies on advanced complementary metal–oxide–semiconductor (CMOS) integration for 3D integrated circuits (ICs), Design of 3D Integrated Circuits and Systems is a practical reference that not only covers a wealth of design issues encountered in 3D integration but also demonstrates their impact on the efficiency of 3D systems.
Author: Krzysztof Iniewski
Publisher: CRC Press
ISBN: 1351834657
Category : Technology & Engineering
Languages : en
Pages : 669
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Book Description
Circuits for Emerging Technologies Beyond CMOS New exciting opportunities are abounding in the field of body area networks, wireless communications, data networking, and optical imaging. In response to these developments, top-notch international experts in industry and academia present Circuits at the Nanoscale: Communications, Imaging, and Sensing. This volume, unique in both its scope and its focus, addresses the state-of-the-art in integrated circuit design in the context of emerging systems. A must for anyone serious about circuit design for future technologies, this book discusses emerging materials that can take system performance beyond standard CMOS. These include Silicon on Insulator (SOI), Silicon Germanium (SiGe), and Indium Phosphide (InP). Three-dimensional CMOS integration and co-integration with Microelectromechanical (MEMS) technology and radiation sensors are described as well. Topics in the book are divided into comprehensive sections on emerging design techniques, mixed-signal CMOS circuits, circuits for communications, and circuits for imaging and sensing. Dr. Krzysztof Iniewski is a director at CMOS Emerging Technologies, Inc., a consulting company in Vancouver, British Columbia. His current research interests are in VLSI ciruits for medical applications. He has published over 100 research papers in international journals and conferences, and he holds 18 international patents granted in the United States, Canada, France, Germany, and Japan. In this volume, he has assembled the contributions of over 60 world-reknown experts who are at the top of their field in the world of circuit design, advancing the bank of knowledge for all who work in this exciting and burgeoning area.
