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Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1080
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Book Description
Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1080
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Book Description
Author: J.T. Devreese
Publisher: Springer Science & Business Media
ISBN: 1461319072
Category : Science
Languages : en
Pages : 444
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Book Description
The 1986 Advanced Study Institute on "The Physics of the two-Dimen sional Electron Gas" took place at the Conference Centre liTer Helme", close to Oostende (Belgium), from June 2 till 16, 1986. We were motivated to organize this Advanced Study Institute in view of the recent experimental and theoretical progress in the study of the two-dimensional electron gas. An additional motivation was our own theore tical interest in cyclotron resonance in two-dimensional electron systems at our institute. It is my pleasure to thank several instances and people who made this Advanced Study Institute possible. First of all, the sponsor of the Advanced Study Institute, the NATO Scientific Committee. Furthermore, the co sponsors: Agfa Gevaert, Bell Telephone Mfg. Co. N.V., Burroughs Belgium. Control Data. Digital Equipment Corporation, Esso Belgium. European Research Office (USA). Kredietbank. National Science Foundation (USA). Special thanks are due to the members of the Program Committee and the members of the Organizing Committee. I would also like to thank Mrs. H. Evans for typing assistance.
Author: Hari Singh Nalwa
Publisher: Academic Press
ISBN: 0125129084
Category : Science
Languages : en
Pages : 661
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Book Description
This five-volume handbook focuses on processing techniques, characterization methods, and physical properties of thin films (thin layers of insulating, conducting, or semiconductor material). The editor has composed five separate, thematic volumes on thin films of metals, semimetals, glasses, ceramics, alloys, organics, diamonds, graphites, porous materials, noncrystalline solids, supramolecules, polymers, copolymers, biopolymers, composites, blends, activated carbons, intermetallics, chalcogenides, dyes, pigments, nanostructured materials, biomaterials, inorganic/polymer composites, organoceramics, metallocenes, disordered systems, liquid crystals, quasicrystals, and layered structures. Thin films is a field of the utmost importance in today's materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. Advanced, high-performance computers, high-definition TV, digital camcorders, sensitive broadband imaging systems, flat-panel displays, robotic systems, and medical electronics and diagnostics are but a few examples of miniaturized device technologies that depend the utilization of thin film materials. The Handbook of Thin Films Materials is a comprehensive reference focusing on processing techniques, characterization methods, and physical properties of these thin film materials.
Author: Lydia L. Sohn
Publisher: Springer Science & Business Media
ISBN: 9401588392
Category : Science
Languages : en
Pages : 680
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Book Description
Ongoing developments in nanofabrication technology and the availability of novel materials have led to the emergence and evolution of new topics for mesoscopic research, including scanning-tunnelling microscopic studies of few-atom metallic clusters, discrete energy level spectroscopy, the prediction of Kondo-type physics in the transport properties of quantum dots, time dependent effects, and the properties of interacting systems, e.g. of Luttinger liquids. The overall understanding of each of these areas is still incomplete; nevertheless, with the foundations laid by studies in the more traditional systems there is no doubt that these new areas will advance mesoscopic electron transport to a new phenomenological level, both experimentally and theoretically. Mesoscopic Electron Transport highlights selected areas in the field, provides a comprehensive review of such systems, and also serves as an introduction to the new and developing areas of mesoscopic electron transport.
Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1274
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Author: B. Kramer
Publisher: Springer Science & Business Media
ISBN: 9400917600
Category : Science
Languages : en
Pages : 382
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Book Description
The articles in this book have been selected from the lectures of a NATO Advanced Study Institute held at Bad Lauterberg (Germany) in August 1995. Internationally well-known researchers in the field of mesoscopic quantum physics provide insight into the fundamental physics underlying the mesoscopic transport phenomena in structured semiconductor inversion layers. In addition, some of the most recent achievements are reported in contributed papers. The aim of the volume is not to give an overview over the field. Instead, emphasis is on interaction and correlation phenomena that turn out to be of increasing importance for the understanding of the phenomena in the quantum Hall regime, and in the transport through quantum dots. The present status of the quantum Hall experiments and theory is reviewed. As a "key example" for non-Fermi liquid behavior the Luttinger liquid is introduced, including some of the most recent developments. It is not only of importance for the fractional quantum Hall effect, but also for the understanding of transport in quantum wires. Furthermore, the chaotic and the correlation aspects of the transport in quantum dot systems are described. The status of the experimental work in the area of persistent currents in semiconductor systems is outlined. The construction of one of the first single-electron transistors is reported. The theoretical approach to mesoscopic transport, presently a most active area, is treated, and some aspects of time-dependent transport phenomena are also discussed.
Author: David K. Ferry
Publisher: Springer Science & Business Media
ISBN: 1461519675
Category : Science
Languages : en
Pages : 542
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Book Description
The operation of semiconductor devices depends upon the use of electrical potential barriers (such as gate depletion) in controlling the carrier densities (electrons and holes) and their transport. Although a successful device design is quite complicated and involves many aspects, the device engineering is mostly to devise a "best" device design by defIning optimal device structures and manipulating impurity profIles to obtain optimal control of the carrier flow through the device. This becomes increasingly diffIcult as the device scale becomes smaller and smaller. Since the introduction of integrated circuits, the number of individual transistors on a single chip has doubled approximately every three years. As the number of devices has grown, the critical dimension of the smallest feature, such as a gate length (which is related to the transport length defIning the channel), has consequently declined. The reduction of this design rule proceeds approximately by a factor of 1. 4 each generation, which means we will be using 0. 1-0. 15 ). lm rules for the 4 Gb chips a decade from now. If we continue this extrapolation, current technology will require 30 nm design rules, and a cell 3 2 size
Author:
Publisher: Academic Press
ISBN: 0080865089
Category : Technology & Engineering
Languages : en
Pages : 465
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Book Description
The explosion of the science of mesoscopic structures is having a great impact on physics and electrical engineering because of the possible applications of these structures in microelectronic and optoelectronic devices of the future. This volume of Solid State Physics consists of two comprehensive and authoritative articles that discuss most of the physical problems that have so far been identified as being of importance in semiconductor nanostructures. Much of the volume is tutorial in characture--while at the same time time presenting current and vital theoretical and experimental results and a copious reference list--so it will be essential reading to all those taking a part in the research and development of this emerging technology.
Author: Janez Bonca
Publisher: Springer Science & Business Media
ISBN: 140209146X
Category : Technology & Engineering
Languages : en
Pages : 401
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Book Description
Proceedings of the NATO Advanced Research Workshop on Electron Transport in Nanosystems Yalta, Ukraine 17-21 September 2007
Author: Mahmood Aliofkhazraei
Publisher: CRC Press
ISBN: 1466591196
Category : Science
Languages : en
Pages : 3491
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Book Description
Graphene is the strongest material ever studied and can be an efficient substitute for silicon. This six-volume handbook focuses on fabrication methods, nanostructure and atomic arrangement, electrical and optical properties, mechanical and chemical properties, size-dependent properties, and applications and industrialization. There is no other major reference work of this scope on the topic of graphene, which is one of the most researched materials of the twenty-first century. The set includes contributions from top researchers in the field and a foreword written by two Nobel laureates in physics.
