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Author: Romain Léon Terazzi
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Author: Romain Léon Terazzi
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Author: Romain Terazzi
Publisher: LAP Lambert Academic Publishing
ISBN: 9783659139567
Category :
Languages : en
Pages : 348
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Book Description
The simulation of transport in semiconductor heterostructures like quantum cascade lasers is of central interest as it enables the knowledge of the electrons dynamics inside such structures, allowing the determination of electrical and optical properties of the latter. These human-designed structures have an atomic resolution and therefore require a quantum mechanical description. The latter can be performed at different levels. The basic description gives the band-structure that represents where electrons can exist in the structure. However this description does not provide information about the transport properties, as the latter require the knowledge of the interaction of electrons with various sources of scattering inside the structure. In this work we present an effective transport model that relies both on coherent and incoherent transport processes.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 85
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Author: Gabriel Beji
Publisher:
ISBN:
Category :
Languages : en
Pages : 208
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Author: Jérôme Faist
Publisher: Oxford University Press
ISBN: 0198528248
Category : Science
Languages : en
Pages : 321
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Book Description
This book describes the physics, fabrication technology, and applications of the quantum cascade laser.
Author: Hans Callebaut
Publisher:
ISBN:
Category :
Languages : en
Pages : 193
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(Cont.) A model was developed for e-e scattering, which produced thermalized subband electron distributions. In addition, several quantum-cascade devices were simulated and the calculation results were compared to the DM Monte Carlo results and measurements. We find that, while the NEGF simulations with momentum-dependent scattering matrix elements and e-e scattering predict the most accurate results, the simple NEGF simulation originally implemented by Wacker and the DM simulation can also yield acceptable results at a much reduced computational expense.
Author: Gabriel Beji
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Author: Carlos Perez
Publisher:
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Category :
Languages : en
Pages : 0
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Since their initial demonstration in 1994, quantum cascade lasers (QCLs) have undergone enormous advancements. However, inefficient dissipation of heat can hinder the performance of QCLs. The complex structure of QCL devices creates a difficult thermal problem. The multilayer and multi-material nature of QCL designs results in a highly resistive thermal pathway to the heatsink due to various phonon-scattering mechanisms. Given the large proportion of electrical pump power that dissipates as heat within these arrays, the thermal design needs to be optimized to minimize the temperature increase within the array and avoid thermal issues, such as reduced maximum power output, decreased wall-plug efficiency, thermal lensing, and increased lasing threshold current. To maintain the advancement of QCLs, the thermal dissipation issues of these devices must be addressed. It is necessary to characterize the different scattering mechanisms that affect the thermal conductivity of materials and structures, such as superlattices (SLs), relevant to these devices. In this work, time-domain thermoreflectance was used to measure the thermal properties of SLs, silicon-doped indium phosphide (Si-InP), iron-doped indium phosphide (Fe-InP), InGaAs, and InAlAs at various temperatures, concentrations, interface densities (# interfaces/total thickness), and thicknesses. In this work, the thermal conductivity of thin films of Si-InP and Fe-InP from 80 to 450 K was measured. The phonon gas model and sensitivity analysis were used to characterize the role of various scattering mechanisms in Si-InP and Fe-InP. The effect of film thickness on the thermal conductivity of these materials was quantified. In addition, the thermal conductivity of In0.63Ga0.37As/In0.37Al0.63As SLs with interface densities ranging from 0.0374 to 2.19 nm-1 in the temperature range of 80--450 K was measured. Time-domain thermoreflectance measurements of the thermal conductivity of III-V alloy SLs as a function of interface density demonstrate the presence of a minimum, which is an indication of a crossover from incoherent to coherent phonon transport as the interface density increases. This minimum continues with increasing temperature, showing the continued dominance of the temperature-independent interface and alloy disorder scattering over the temperature-dependent three-phonon scattering in thermal transport through III--V alloy SLs. The In0.5275Ga0.4725As measurements indicate that thermal conductivity decreases as thickness decreases, primarily due to boundary scattering, until a critical thickness of ~100 nm is reached, below which the thermal conductivity appears to flatten out at ~2.75 W m-1 K-1. The In0.521Al0.479As measurements seem to be insensitive to sample thickness, similar in some ways to what has been shown in amorphous materials such as SiO2, where the effects of thin film size are nonexistent. This study fills the knowledge gap regarding the thermal properties of materials and structures important to QCLs.
Author: Dan Botez
Publisher: Cambridge University Press
ISBN: 1108570607
Category : Technology & Engineering
Languages : en
Pages : 552
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Book Description
Learn how the rapidly expanding area of mid-infrared and terahertz photonics has been revolutionized in this comprehensive overview. State-of-the-art practical applications are supported by real-life examples and expert guidance. Also featuring fundamental theory enabling you to improve performance of both existing and future devices.
Author: Hyunyong Choi
Publisher:
ISBN:
Category :
Languages : en
Pages : 422
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Book Description
