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Author: David Binkley
Publisher: John Wiley & Sons
ISBN: 047003369X
Category : Technology & Engineering
Languages : en
Pages : 632
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Book Description
Analog CMOS integrated circuits are in widespread use for communications, entertainment, multimedia, biomedical, and many other applications that interface with the physical world. Although analog CMOS design is greatly complicated by the design choices of drain current, channel width, and channel length present for every MOS device in a circuit, these design choices afford significant opportunities for optimizing circuit performance. This book addresses tradeoffs and optimization of device and circuit performance for selections of the drain current, inversion coefficient, and channel length, where channel width is implicitly considered. The inversion coefficient is used as a technology independent measure of MOS inversion that permits design freely in weak, moderate, and strong inversion. This book details the significant performance tradeoffs available in analog CMOS design and guides the designer towards optimum design by describing: An interpretation of MOS modeling for the analog designer, motivated by the EKV MOS model, using tabulated hand expressions and figures that give performance and tradeoffs for the design choices of drain current, inversion coefficient, and channel length; performance includes effective gate-source bias and drain-source saturation voltages, transconductance efficiency, transconductance distortion, normalized drain-source conductance, capacitances, gain and bandwidth measures, thermal and flicker noise, mismatch, and gate and drain leakage current Measured data that validates the inclusion of important small-geometry effects like velocity saturation, vertical-field mobility reduction, drain-induced barrier lowering, and inversion-level increases in gate-referred, flicker noise voltage In-depth treatment of moderate inversion, which offers low bias compliance voltages, high transconductance efficiency, and good immunity to velocity saturation effects for circuits designed in modern, low-voltage processes Fabricated design examples that include operational transconductance amplifiers optimized for various tradeoffs in DC and AC performance, and micropower, low-noise preamplifiers optimized for minimum thermal and flicker noise A design spreadsheet, available at the book web site, that facilitates rapid, optimum design of MOS devices and circuits Tradeoffs and Optimization in Analog CMOS Design is the first book dedicated to this important topic. It will help practicing analog circuit designers and advanced students of electrical engineering build design intuition, rapidly optimize circuit performance during initial design, and minimize trial-and-error circuit simulations.
Author: David Binkley
Publisher: John Wiley & Sons
ISBN: 047003369X
Category : Technology & Engineering
Languages : en
Pages : 632
Get Book Here
Book Description
Analog CMOS integrated circuits are in widespread use for communications, entertainment, multimedia, biomedical, and many other applications that interface with the physical world. Although analog CMOS design is greatly complicated by the design choices of drain current, channel width, and channel length present for every MOS device in a circuit, these design choices afford significant opportunities for optimizing circuit performance. This book addresses tradeoffs and optimization of device and circuit performance for selections of the drain current, inversion coefficient, and channel length, where channel width is implicitly considered. The inversion coefficient is used as a technology independent measure of MOS inversion that permits design freely in weak, moderate, and strong inversion. This book details the significant performance tradeoffs available in analog CMOS design and guides the designer towards optimum design by describing: An interpretation of MOS modeling for the analog designer, motivated by the EKV MOS model, using tabulated hand expressions and figures that give performance and tradeoffs for the design choices of drain current, inversion coefficient, and channel length; performance includes effective gate-source bias and drain-source saturation voltages, transconductance efficiency, transconductance distortion, normalized drain-source conductance, capacitances, gain and bandwidth measures, thermal and flicker noise, mismatch, and gate and drain leakage current Measured data that validates the inclusion of important small-geometry effects like velocity saturation, vertical-field mobility reduction, drain-induced barrier lowering, and inversion-level increases in gate-referred, flicker noise voltage In-depth treatment of moderate inversion, which offers low bias compliance voltages, high transconductance efficiency, and good immunity to velocity saturation effects for circuits designed in modern, low-voltage processes Fabricated design examples that include operational transconductance amplifiers optimized for various tradeoffs in DC and AC performance, and micropower, low-noise preamplifiers optimized for minimum thermal and flicker noise A design spreadsheet, available at the book web site, that facilitates rapid, optimum design of MOS devices and circuits Tradeoffs and Optimization in Analog CMOS Design is the first book dedicated to this important topic. It will help practicing analog circuit designers and advanced students of electrical engineering build design intuition, rapidly optimize circuit performance during initial design, and minimize trial-and-error circuit simulations.
Author: Paul G. A. Jespers
Publisher: Cambridge University Press
ISBN: 1108136737
Category : Technology & Engineering
Languages : en
Pages : 340
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Book Description
Discover a fresh approach to efficient and insight-driven analog integrated circuit design in nanoscale-CMOS with this hands-on guide. Expert authors present a sizing methodology that employs SPICE-generated lookup tables, enabling close agreement between hand analysis and simulation. This enables the exploration of analog circuit tradeoffs using the gm/ID ratio as a central variable in script-based design flows, and eliminates time-consuming iterations in a circuit simulator. Supported by downloadable MATLAB code, and including over forty detailed worked examples, this book will provide professional analog circuit designers, researchers, and graduate students with the theoretical know-how and practical tools needed to acquire a systematic and re-use oriented design style for analog integrated circuits in modern CMOS.
Author: João Carlos Ferreira de Almeida Casaleiro
Publisher: Springer
ISBN: 3030007405
Category : Technology & Engineering
Languages : en
Pages : 166
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Book Description
This book presents a tutorial review of van der Pol model, a universal oscillator model for the analysis of modern RC−oscillators in weak and strong nonlinear regimes. A detailed analysis of the injection locking in van der Pol oscillators is also presented. The relation between the van der Pol parameters and several circuit implementations in CMOS nanotechnology is given, showing that this theory is very useful in the optimization of oscillator key parameters, such as: frequency, amplitude and phase relationship. The authors discuss three different examples: active coupling RC−oscillators, capacitive coupling RC−oscillators, and two-integrator oscillator working in the sinusoidal regime. · Provides a detailed tutorial on the van der Pol oscillator model, which can be the basis for the analysis of modern RC−oscillators in weak and strong nonlinear regimes; · Demonstrations the relationship between the van der Pol parameters and several circuit implementations in CMOS nanotechnology, showing that this theory is a powerful tool in the optimization of key oscillator parameters; · Provides three circuit prototypes implemented in modern CMOS nanotechnology in the GHz range, with applications in low area, low power, low cost, wireless sensor network (WSN) applications (e.g. IoT, BLE).
Author: Nitz Saputra
Publisher: CRC Press
ISBN: 100079931X
Category : Technology & Engineering
Languages : en
Pages : 199
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Book Description
Significant research effort has been devoted to the study and realization of autonomous wireless systems for wireless sensor and personal-area networking, the internet of things, and machine-to-machine communications. Low-power RF integrated circuits, an energy harvester and a power management circuit are fundamental elements of these systems. An FM-UWB Transceiver for Autonomous Wireless Systems presents state-of-the-art developments in low-power FM-UWB transceiver realizations. The design, performance and implementation of prototype transceivers in CMOS technology are presented. A working hardware realization of an autonomous node that includes a prototype power management circuit is also proposed and detailed in this book.Technical topics include: Low-complexity FM-UWB modulation schemesLow-power FM-UWB transceiver prototypes in CMOS technologyCMOS on-chip digital calibration techniquesSolar power harvester and power management in CMOS for low-power RF circuitsAn FM-UWB Transceiver for Autonomous Wireless Systems is an ideal text and reference for engineers working in wireless communication industries, as well as academic staff and graduate students engaged in electrical engineering and communication systems research.
Author: Guang-Zhong Yang
Publisher: Springer
ISBN: 331969748X
Category : Computers
Languages : en
Pages : 649
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Book Description
Implantable sensing, whether used for transient or long-term monitoring of in vivo physiological, bio-electrical, bio-chemical and metabolic changes, is a rapidly advancing field of research and development. Underpinned by increasingly small, smart and energy efficient designs, they become an integral part of surgical prostheses or implants for both acute and chronic conditions, supporting optimised, context aware sensing, feedback, or stimulation with due consideration of system level impact. From sensor design, fabrication, on-node processing with application specific integrated circuits, to power optimisation, wireless data paths and security, this book provides a detailed explanation of both the theories and practical considerations of developing novel implantable sensors. Other topics covered by the book include sensor embodiment and flexible electronics, implantable optical sensors and power harvesting. Implantable Sensors and Systems – from Theory to Practice is an important reference for those working in the field of medical devices. The structure of the book is carefully prepared so that it can also be used as an introductory reference for those about to enter into this exciting research and developing field.
Author: Paul Jespers
Publisher: Springer Science & Business Media
ISBN: 0387471014
Category : Technology & Engineering
Languages : en
Pages : 180
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Book Description
IC designers appraise currently MOS transistor geometries and currents to compromise objectives like gain-bandwidth, slew-rate, dynamic range, noise, non-linear distortion, etc. Making optimal choices is a difficult task. How to minimize for instance the power consumption of an operational amplifier without too much penalty regarding area while keeping the gain-bandwidth unaffected in the same time? Moderate inversion yields high gains, but the concomitant area increase adds parasitics that restrict bandwidth. Which methodology to use in order to come across the best compromise(s)? Is synthesis a mixture of design experience combined with cut and tries or is it a constrained multivariate optimization problem, or a mixture? Optimization algorithms are attractive from a system perspective of course, but what about low-voltage low-power circuits, requiring a more physical approach? The connections amid transistor physics and circuits are intricate and their interactions not always easy to describe in terms of existing software packages. The gm/ID synthesis methodology is adapted to CMOS analog circuits for the transconductance over drain current ratio combines most of the ingredients needed in order to determine transistors sizes and DC currents.
Author: Christian W. Fabjan
Publisher: Springer Nature
ISBN: 3030353184
Category : Heavy ions
Languages : en
Pages : 1083
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Book Description
This second open access volume of the handbook series deals with detectors, large experimental facilities and data handling, both for accelerator and non-accelerator based experiments. It also covers applications in medicine and life sciences. A joint CERN-Springer initiative, the "Particle Physics Reference Library" provides revised and updated contributions based on previously published material in the well-known Landolt-Boernstein series on particle physics, accelerators and detectors (volumes 21A, B1,B2,C), which took stock of the field approximately one decade ago. Central to this new initiative is publication under full open access
Author: Chris Toumazou
Publisher: Springer Science & Business Media
ISBN: 0306476738
Category : Technology & Engineering
Languages : en
Pages : 1065
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Book Description
As the frequency of communication systems increases and the dimensions of transistors are reduced, more and more stringent performance requirements are placed on analog circuits. This is a trend that is bound to continue for the foreseeable future and while it does, understanding performance trade-offs will constitute a vital part of the analog design process. It is the insight and intuition obtained from a fundamental understanding of performance conflicts and trade-offs, that ultimately provides the designer with the basic tools necessary for effective and creative analog design. Trade-offs in Analog Circuit Design, which is devoted to the understanding of trade-offs in analog design, is quite unique in that it draws together fundamental material from, and identifies interrelationships within, a number of key analog circuits. The book covers ten subject areas: Design methodology, Technology, General Performance, Filters, Switched Circuits, Oscillators, Data Converters, Transceivers, Neural Processing, and Analog CAD. Within these subject areas it deals with a wide diversity of trade-offs ranging from frequency-dynamic range and power, gain-bandwidth, speed-dynamic range and phase noise, to tradeoffs in design for manufacture and IC layout. The book has by far transcended its original scope and has become both a designer's companion as well as a graduate textbook. An important feature of this book is that it promotes an intuitive approach to understanding analog circuits by explaining fundamental relationships and, in many cases, providing practical illustrative examples to demonstrate the inherent basic interrelationships and trade-offs. Trade-offs in Analog Circuit Design draws together 34 contributions from some of the world's most eminent analog circuits-and-systems designers to provide, for the first time, a comprehensive text devoted to a very important and timely approach to analog circuit design.
Author: Christian C. Enz
Publisher: John Wiley & Sons
ISBN: 0470855452
Category : Technology & Engineering
Languages : en
Pages : 328
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Book Description
Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device properties, without the use of complicated equations. All the static, dynamic, noise, non-quasi-static models are completely described in terms of the inversion charge at the source and at the drain taking advantage of the symmetry of the device. Thanks to its hierarchical structure, the model offers several coherent description levels, from basic hand calculation equations to complete computer simulation model. It is also compact, with a minimum number of process-dependant device parameters. Written by its developers, this book provides a comprehensive treatment of the EKV charge-based model of the MOS transistor for the design and simulation of low-power analog and RF ICs. Clearly split into three parts, the authors systematically examine: the basic long-channel intrinsic charge-based model, including all the fundamental aspects of the EKV MOST model such as the basic large-signal static model, the noise model, and a discussion of temperature effects and matching properties; the extended charge-based model, presenting important information for understanding the operation of deep-submicron devices; the high-frequency model, setting out a complete MOS transistor model required for designing RF CMOS integrated circuits. Practising engineers and circuit designers in the semiconductor device and electronics systems industry will find this book a valuable guide to the modelling of MOS transistors for integrated circuits. It is also a useful reference for advanced students in electrical and computer engineering.
Author: Nuno Lourenço
Publisher: Springer
ISBN: 3319420372
Category : Technology & Engineering
Languages : en
Pages : 199
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Book Description
This book introduces readers to a variety of tools for automatic analog integrated circuit (IC) sizing and optimization. The authors provide a historical perspective on the early methods proposed to tackle automatic analog circuit sizing, with emphasis on the methodologies to size and optimize the circuit, and on the methodologies to estimate the circuit’s performance. The discussion also includes robust circuit design and optimization and the most recent advances in layout-aware analog sizing approaches. The authors describe a methodology for an automatic flow for analog IC design, including details of the inputs and interfaces, multi-objective optimization techniques, and the enhancements made in the base implementation by using machine leaning techniques. The Gradient model is discussed in detail, along with the methods to include layout effects in the circuit sizing. The concepts and algorithms of all the modules are thoroughly described, enabling readers to reproduce the methodologies, improve the quality of their designs, or use them as starting point for a new tool. An extensive set of application examples is included to demonstrate the capabilities and features of the methodologies described.
