Author: Markys G. Cain
Publisher: Springer
ISBN: 140209311X
Category : Technology & Engineering
Languages : en
Pages : 283
Book Description
This book presents a comprehensive review of the most important methods used in the characterisation of piezoelectric, ferroelectric and pyroelectric materials. It covers techniques for the analysis of bulk materials and thick and thin film materials and devices. There is a growing demand by industry to adapt and integrate piezoelectric materials into ever smaller devices and structures. Such applications development requires the joint development of reliable, robust, accurate and – most importantly – relevant and applicable measurement and characterisation methods and models. In the past few years there has been a rapid development of new techniques to model and measure the variety of properties that are deemed important for applications development engineers and scientists. The book has been written by the leaders in the field and many chapters represent established measurement best practice, with a strong emphasis on application of the methods via worked examples and detailed experimental procedural descriptions. Each chapter contains numerous diagrams, images, and measurement data, all of which are fully referenced and indexed. The book is intended to occupy space in the research or technical lab, and will be a valuable and practical resource for students, materials scientists, engineers, and lab technicians.
Characterisation of Ferroelectric Bulk Materials and Thin Films
Author: Markys G. Cain
Publisher: Springer
ISBN: 140209311X
Category : Technology & Engineering
Languages : en
Pages : 283
Book Description
This book presents a comprehensive review of the most important methods used in the characterisation of piezoelectric, ferroelectric and pyroelectric materials. It covers techniques for the analysis of bulk materials and thick and thin film materials and devices. There is a growing demand by industry to adapt and integrate piezoelectric materials into ever smaller devices and structures. Such applications development requires the joint development of reliable, robust, accurate and – most importantly – relevant and applicable measurement and characterisation methods and models. In the past few years there has been a rapid development of new techniques to model and measure the variety of properties that are deemed important for applications development engineers and scientists. The book has been written by the leaders in the field and many chapters represent established measurement best practice, with a strong emphasis on application of the methods via worked examples and detailed experimental procedural descriptions. Each chapter contains numerous diagrams, images, and measurement data, all of which are fully referenced and indexed. The book is intended to occupy space in the research or technical lab, and will be a valuable and practical resource for students, materials scientists, engineers, and lab technicians.
Publisher: Springer
ISBN: 140209311X
Category : Technology & Engineering
Languages : en
Pages : 283
Book Description
This book presents a comprehensive review of the most important methods used in the characterisation of piezoelectric, ferroelectric and pyroelectric materials. It covers techniques for the analysis of bulk materials and thick and thin film materials and devices. There is a growing demand by industry to adapt and integrate piezoelectric materials into ever smaller devices and structures. Such applications development requires the joint development of reliable, robust, accurate and – most importantly – relevant and applicable measurement and characterisation methods and models. In the past few years there has been a rapid development of new techniques to model and measure the variety of properties that are deemed important for applications development engineers and scientists. The book has been written by the leaders in the field and many chapters represent established measurement best practice, with a strong emphasis on application of the methods via worked examples and detailed experimental procedural descriptions. Each chapter contains numerous diagrams, images, and measurement data, all of which are fully referenced and indexed. The book is intended to occupy space in the research or technical lab, and will be a valuable and practical resource for students, materials scientists, engineers, and lab technicians.
Thin Film Ferroelectric Materials and Devices
Author: R. Ramesh
Publisher: Springer Science & Business Media
ISBN: 146156185X
Category : Technology & Engineering
Languages : en
Pages : 250
Book Description
The past five years have witnessed some dramatic developments in the general area of ferroelectric thin films materials and devices. Ferroelectrics are not new materials by any stretch ofimagination. Indeed, they have been known since the early partofthis century and popular ferroelectric materials such as Barium Titanate have been in use since the second world war. In the late sixties and seventies, a considerable amountofresearch and development effort was made to create a solid state nonvolatile memory using ferroelectrics in a vary simple matrix-addressed scheme. These attempts failed primarily due to problems associated with either the materials ordue to device architectures. The early eighties saw the advent of new materials processing approaches, such as sol-gel processing, that enabled researchers to fabricate sub-micron thin films of ferroelectric materials on a silicon substrate. These pioneering developments signaled the onsetofa revival in the areaofferroelectric thin films, especially ferroelectric nonvolatile memories. Research and development effort in ferroelectric materials and devices has now hit a feverish pitch, Many university laboratories, national laboratories and advanced R&D laboratories oflarge IC manufacturers are deeply involved in the pursuit of ferroelectric device technologies. Many companies worldwide are investing considerable manpower and resources into ferroelectric technologies. Some have already announced products ranging from embedded memories in micro controllers, low density stand-alone memories, microwave circuit elements, andrf identification tags. There is now considerable optimism that ferroelectric devices andproducts will occupy a significant market-share in the new millennium.
Publisher: Springer Science & Business Media
ISBN: 146156185X
Category : Technology & Engineering
Languages : en
Pages : 250
Book Description
The past five years have witnessed some dramatic developments in the general area of ferroelectric thin films materials and devices. Ferroelectrics are not new materials by any stretch ofimagination. Indeed, they have been known since the early partofthis century and popular ferroelectric materials such as Barium Titanate have been in use since the second world war. In the late sixties and seventies, a considerable amountofresearch and development effort was made to create a solid state nonvolatile memory using ferroelectrics in a vary simple matrix-addressed scheme. These attempts failed primarily due to problems associated with either the materials ordue to device architectures. The early eighties saw the advent of new materials processing approaches, such as sol-gel processing, that enabled researchers to fabricate sub-micron thin films of ferroelectric materials on a silicon substrate. These pioneering developments signaled the onsetofa revival in the areaofferroelectric thin films, especially ferroelectric nonvolatile memories. Research and development effort in ferroelectric materials and devices has now hit a feverish pitch, Many university laboratories, national laboratories and advanced R&D laboratories oflarge IC manufacturers are deeply involved in the pursuit of ferroelectric device technologies. Many companies worldwide are investing considerable manpower and resources into ferroelectric technologies. Some have already announced products ranging from embedded memories in micro controllers, low density stand-alone memories, microwave circuit elements, andrf identification tags. There is now considerable optimism that ferroelectric devices andproducts will occupy a significant market-share in the new millennium.
Ferroelectric Thin Films
Author: Carlos Paz de Araujo
Publisher: Taylor & Francis
ISBN: 9782884491891
Category : Science
Languages : en
Pages : 596
Book Description
The impetus for the rapid development of thin film technology, relative to that of bulk materials, is its application to a variety of microelectronic products. Many of the characteristics of thin film ferroelectric materials are utilized in the development of these products - namely, their nonvolatile memory and piezoelectric, pyroelectric, and electro-optic properties. It is befitting, therefore, that the first of a set of three complementary books with the general title Integrated Ferroelectric Devices and Technologies focuses on the synthesis of thin film ferroelectric materials and their basic properties. Because it is a basic introduction to the chemistry, materials science, processing, and physics of the materials from which integrated ferroelectrics are made, newcomers to this field as well as veterans will find this book self-contained and invaluable in acquiring the diverse elements requisite to success in their work in this area. It is directed at electronic engineers and physicists as well as process and system engineers, ceramicists, and chemists involved in the research, design, development, manufacturing, and utilization of thin film ferroelectric materials.
Publisher: Taylor & Francis
ISBN: 9782884491891
Category : Science
Languages : en
Pages : 596
Book Description
The impetus for the rapid development of thin film technology, relative to that of bulk materials, is its application to a variety of microelectronic products. Many of the characteristics of thin film ferroelectric materials are utilized in the development of these products - namely, their nonvolatile memory and piezoelectric, pyroelectric, and electro-optic properties. It is befitting, therefore, that the first of a set of three complementary books with the general title Integrated Ferroelectric Devices and Technologies focuses on the synthesis of thin film ferroelectric materials and their basic properties. Because it is a basic introduction to the chemistry, materials science, processing, and physics of the materials from which integrated ferroelectrics are made, newcomers to this field as well as veterans will find this book self-contained and invaluable in acquiring the diverse elements requisite to success in their work in this area. It is directed at electronic engineers and physicists as well as process and system engineers, ceramicists, and chemists involved in the research, design, development, manufacturing, and utilization of thin film ferroelectric materials.
Thin Film Physics And Devices: Fundamental Mechanism, Materials And Applications For Thin Films
Author: Jianguo Zhu
Publisher: World Scientific
ISBN: 9811224005
Category : Science
Languages : en
Pages : 706
Book Description
Thin films have an extremely broad range of applications from electronics and optics to new materials and devices. Collaborative and multidisciplinary efforts from physicists, materials scientists, engineers and others have established and advanced a field with key pillars constituting (i) the synthesis and processing of thin films, (ii) the understanding of physical properties in relation to the nanometer scale, (iii) the design and fabrication of nano-devices or devices with thin film materials as building blocks, and (iv) the design and construction of novel tools for characterization of thin films.Against the backdrop of the increasingly interdisciplinary field, this book sets off to inform the basics of thin film physics and thin film devices. Readers are systematically introduced to the synthesis, processing and application of thin films; they will also study the formation of thin films, their structure and defects, and their various properties — mechanical, electrical, semiconducting, magnetic, and superconducting. With a primary focus on inorganic thin film materials, the book also ventures on organic materials such as self-assembled monolayers and Langmuir-Blodgett films.This book will be effective as a teaching or reference material in the various disciplines, ranging from Materials Science and Engineering, Electronic Science and Engineering, Electronic Materials and Components, Semiconductor Physics and Devices, to Applied Physics and more. The original Chinese publication has been instrumental in this purpose across many Chinese universities and colleges.
Publisher: World Scientific
ISBN: 9811224005
Category : Science
Languages : en
Pages : 706
Book Description
Thin films have an extremely broad range of applications from electronics and optics to new materials and devices. Collaborative and multidisciplinary efforts from physicists, materials scientists, engineers and others have established and advanced a field with key pillars constituting (i) the synthesis and processing of thin films, (ii) the understanding of physical properties in relation to the nanometer scale, (iii) the design and fabrication of nano-devices or devices with thin film materials as building blocks, and (iv) the design and construction of novel tools for characterization of thin films.Against the backdrop of the increasingly interdisciplinary field, this book sets off to inform the basics of thin film physics and thin film devices. Readers are systematically introduced to the synthesis, processing and application of thin films; they will also study the formation of thin films, their structure and defects, and their various properties — mechanical, electrical, semiconducting, magnetic, and superconducting. With a primary focus on inorganic thin film materials, the book also ventures on organic materials such as self-assembled monolayers and Langmuir-Blodgett films.This book will be effective as a teaching or reference material in the various disciplines, ranging from Materials Science and Engineering, Electronic Science and Engineering, Electronic Materials and Components, Semiconductor Physics and Devices, to Applied Physics and more. The original Chinese publication has been instrumental in this purpose across many Chinese universities and colleges.
Nanoscale Phenomena in Ferroelectric Thin Films
Author: Seungbum Hong
Publisher: Springer Science & Business Media
ISBN: 1441990445
Category : Technology & Engineering
Languages : en
Pages : 294
Book Description
This book presents the recent advances in the field of nanoscale science and engineering of ferroelectric thin films. It comprises two main parts, i.e. electrical characterization in nanoscale ferroelectric capacitor, and nano domain manipulation and visualization in ferroelectric materials. Well known le'adingexperts both in relevant academia and industry over the world (U.S., Japan, Germany, Switzerland, Korea) were invited to contribute to each chapter. The first part under the title of electrical characterization in nanoscale ferroelectric capacitors starts with Chapter 1, "Testing and characterization of ferroelectric thin film capacitors," written by Dr. I. K. Yoo. The author provides a comprehensive review on basic concepts and terminologies of ferroelectric properties and their testing methods. This chapter also covers reliability issues in FeRAMs that are crucial for commercialization of high density memory products. In Chapter 2, "Size effects in ferroelectric film capacitors: role ofthe film thickness and capacitor size," Dr. I. Stolichnov discusses the size effects both in in-plane and out-of-plane dimensions of the ferroelectric thin film. The author successfully relates the electric performance and domain dynamics with proposed models of charge injection and stress induced phase transition. The author's findings present both a challenging problem and the clue to its solution of reliably predicting the switching properties for ultra-thin ferroelectric capacitors. In Chapter 3, "Ferroelectric thin films for memory applications: nanoscale characterization by scanning force microscopy," Prof. A.
Publisher: Springer Science & Business Media
ISBN: 1441990445
Category : Technology & Engineering
Languages : en
Pages : 294
Book Description
This book presents the recent advances in the field of nanoscale science and engineering of ferroelectric thin films. It comprises two main parts, i.e. electrical characterization in nanoscale ferroelectric capacitor, and nano domain manipulation and visualization in ferroelectric materials. Well known le'adingexperts both in relevant academia and industry over the world (U.S., Japan, Germany, Switzerland, Korea) were invited to contribute to each chapter. The first part under the title of electrical characterization in nanoscale ferroelectric capacitors starts with Chapter 1, "Testing and characterization of ferroelectric thin film capacitors," written by Dr. I. K. Yoo. The author provides a comprehensive review on basic concepts and terminologies of ferroelectric properties and their testing methods. This chapter also covers reliability issues in FeRAMs that are crucial for commercialization of high density memory products. In Chapter 2, "Size effects in ferroelectric film capacitors: role ofthe film thickness and capacitor size," Dr. I. Stolichnov discusses the size effects both in in-plane and out-of-plane dimensions of the ferroelectric thin film. The author successfully relates the electric performance and domain dynamics with proposed models of charge injection and stress induced phase transition. The author's findings present both a challenging problem and the clue to its solution of reliably predicting the switching properties for ultra-thin ferroelectric capacitors. In Chapter 3, "Ferroelectric thin films for memory applications: nanoscale characterization by scanning force microscopy," Prof. A.
Chemical Solution Synthesis for Materials Design and Thin Film Device Applications
Author: Soumen Das
Publisher: Elsevier
ISBN: 012823170X
Category : Technology & Engineering
Languages : en
Pages : 748
Book Description
Chemical Solution Synthesis for Materials Design and Thin Film Device Applications presents current research on wet chemical techniques for thin-film based devices. Sections cover the quality of thin films, types of common films used in devices, various thermodynamic properties, thin film patterning, device configuration and applications. As a whole, these topics create a roadmap for developing new materials and incorporating the results in device fabrication. This book is suitable for graduate, undergraduate, doctoral students, and researchers looking for quick guidance on material synthesis and device fabrication through wet chemical routes. - Provides the different wet chemical routes for materials synthesis, along with the most relevant thin film structured materials for device applications - Discusses patterning and solution processing of inorganic thin films, along with solvent-based processing techniques - Includes an overview of key processes and methods in thin film synthesis, processing and device fabrication, such as nucleation, lithography and solution processing
Publisher: Elsevier
ISBN: 012823170X
Category : Technology & Engineering
Languages : en
Pages : 748
Book Description
Chemical Solution Synthesis for Materials Design and Thin Film Device Applications presents current research on wet chemical techniques for thin-film based devices. Sections cover the quality of thin films, types of common films used in devices, various thermodynamic properties, thin film patterning, device configuration and applications. As a whole, these topics create a roadmap for developing new materials and incorporating the results in device fabrication. This book is suitable for graduate, undergraduate, doctoral students, and researchers looking for quick guidance on material synthesis and device fabrication through wet chemical routes. - Provides the different wet chemical routes for materials synthesis, along with the most relevant thin film structured materials for device applications - Discusses patterning and solution processing of inorganic thin films, along with solvent-based processing techniques - Includes an overview of key processes and methods in thin film synthesis, processing and device fabrication, such as nucleation, lithography and solution processing
Ferroelectricity in Doped Hafnium Oxide
Author: Uwe Schroeder
Publisher: Woodhead Publishing
ISBN: 0081024312
Category : Technology & Engineering
Languages : en
Pages : 572
Book Description
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. - Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices - Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more - Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face
Publisher: Woodhead Publishing
ISBN: 0081024312
Category : Technology & Engineering
Languages : en
Pages : 572
Book Description
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. - Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices - Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more - Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face
Ferroelectric Thin Films
Author: Masanori Okuyama
Publisher: Springer Science & Business Media
ISBN: 9783540241638
Category : Computers
Languages : en
Pages : 272
Book Description
Ferroelectric thin films continue to attract much attention due to their developing applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. The contributing authors are acknowledged experts in the field.
Publisher: Springer Science & Business Media
ISBN: 9783540241638
Category : Computers
Languages : en
Pages : 272
Book Description
Ferroelectric thin films continue to attract much attention due to their developing applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. The contributing authors are acknowledged experts in the field.
Emerging Ferroelectric Materials and Devices
Author:
Publisher: Elsevier
ISBN: 0443193916
Category : Science
Languages : en
Pages : 186
Book Description
Semiconductors and Semimetals series, highlights new advances in the field, with this new volume presenting interesting chapters. Each chapter is written by an international board of authors. - 2019 marks the year that nitride ferroelectrics were reported, and the indicators and mechanisms used for oxide ferroelectricity appear inadequate - The emergence of nitride ferroelectrics has opened new frontiers in ferroelectric materials research and ferroelectric based technologies. This book is a direct consequence of this - Draws upon the collective knowledge and expertise of leading scientists and researchers in this field to provide a holistic view on the state of ferroelectric nitride research and applications
Publisher: Elsevier
ISBN: 0443193916
Category : Science
Languages : en
Pages : 186
Book Description
Semiconductors and Semimetals series, highlights new advances in the field, with this new volume presenting interesting chapters. Each chapter is written by an international board of authors. - 2019 marks the year that nitride ferroelectrics were reported, and the indicators and mechanisms used for oxide ferroelectricity appear inadequate - The emergence of nitride ferroelectrics has opened new frontiers in ferroelectric materials research and ferroelectric based technologies. This book is a direct consequence of this - Draws upon the collective knowledge and expertise of leading scientists and researchers in this field to provide a holistic view on the state of ferroelectric nitride research and applications
Frontiers of Thin Film Technology
Author:
Publisher: Academic Press
ISBN: 0080542948
Category : Science
Languages : en
Pages : 495
Book Description
Frontiers of Thin Film Technology, Volume 28 focuses on recent developments in those technologies that are critical to the successful growth, fabrication, and characterization of newly emerging solid-state thin film device architectures. Volume 28 is a condensed sampler of the Handbook for use by professional scientists, engineers, and students involved in the materials, design, fabrication, diagnostics, and measurement aspects of these important new devices.
Publisher: Academic Press
ISBN: 0080542948
Category : Science
Languages : en
Pages : 495
Book Description
Frontiers of Thin Film Technology, Volume 28 focuses on recent developments in those technologies that are critical to the successful growth, fabrication, and characterization of newly emerging solid-state thin film device architectures. Volume 28 is a condensed sampler of the Handbook for use by professional scientists, engineers, and students involved in the materials, design, fabrication, diagnostics, and measurement aspects of these important new devices.