Thermodynamic Basis of Crystal Growth PDF Download
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Author: Jacob H. Greenberg
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 249
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Book Description
Author: Jacob H. Greenberg
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 249
Get Book Here
Book Description
Author: Jacob Greenberg
Publisher:
ISBN: 9783662048771
Category :
Languages : en
Pages : 264
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Book Description
Author: Jacob Greenberg
Publisher: Springer Science & Business Media
ISBN: 3662048760
Category : Science
Languages : en
Pages : 256
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Book Description
This book presents a new and promising technique to grow single crystalline compound semiconductor materials with defined stoichometry. The technique is based on the high-precision experimental determination of the boundaries of the single-phase volume of the solid in the pressure-temperature-composition P-T-X phase space. Alongside test results obtained by the author and his colleagues, the P-T-X diagrams of other important materials (e.g., III-V, V-VI semiconductors) are also discussed.
Author: Jacob Greenberg
Publisher: Springer Science & Business Media
ISBN: 9783540412465
Category : Science
Languages : en
Pages : 268
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Book Description
This book presents a new and promising technique to grow single crystalline compound semiconductor materials with defined stoichometry. The technique is based on the high-precision experimental determination of the boundaries of the single-phase volume of the solid in the pressure-temperature-composition P-T-X phase space. Alongside test results obtained by the author and his colleagues, the P-T-X diagrams of other important materials (e.g., III-V, V-VI semiconductors) are also discussed.
Author: Georg Müller
Publisher: Elsevier
ISBN: 0080473075
Category : Science
Languages : en
Pages : 434
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Book Description
The book contains 5 chapters with 19 contributions form internationally well acknowledged experts in various fields of crystal growth. The topics are ranging from fundamentals (thermodynamic of epitaxy growth, kinetics, morphology, modeling) to new crystal materials (carbon nanocrystals and nanotubes, biological crystals), to technology (Silicon Czochralski growth, oxide growth, III-IV epitaxy) and characterization (point defects, X-ray imaging, in-situ STM). It covers the treatment of bulk growth as well as epitaxy by anorganic and organic materials.
Author: Ivan V. Markov
Publisher: World Scientific
ISBN: 9812796894
Category : Science
Languages : en
Pages : 566
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Book Description
This is the first-ever textbook on the fundamentals of nucleation, crystal growth and epitaxy. It has been written from a unified point of view and is thus a non-eclectic presentation of this interdisciplinary topic in materials science. The reader is required to possess some basic knowledge of mathematics and physics. All formulae and equations are accompanied by examples that are of technological importance. The book presents not only the fundamentals but also the state of the art in the subject. The second revised edition includes two separate chapters dealing with the effect of the Ehrlich-Schwoebel barrier for down-step diffusion, as well as the effect of surface active species, on the morphology of the growing surfaces. In addition, many other chapters are updated accordingly. Thus, it serves as a valuable reference book for both graduate students and researchers in materials science. Sample Chapter(s). Crystal-Ambient Phase Equilibrium (396 KB). Contents: Crystal OCo Ambient Phase Equilibrium; Nucleation; Crystal Growth; Epitaxial Growth. Readership: Graduate students, academics and researchers in materials engineering, microelectronics, new materials, semiconductors and related areas."
Author: Franz E. Rosenberger
Publisher: Springer Science & Business Media
ISBN: 3642812759
Category : Technology & Engineering
Languages : en
Pages : 544
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Book Description
The intrinsic properties of a solid, i. e. , the properties that result from its specific structure, can be largely modified by crystallographic and chem ical defects. The formation of these defects is governed by the heat and mass transfer conditions which prevail on and near a crystal-nutrient in terface during crystallization. Hence, both the growth of highly perfect crystals and the preparation of samples having predetermined defect-induced (extrinsic) properties require a thorough understanding of the reaction and transport mechanisms that govern crystallization from vapors, solutions and melts. Crystal growth, as a science, is therefore mostly concerned with the chemistry and physics of heat and mass transport in these fluid-solid phase transitions. Solid-solid transitions are, at this time, not widely employed for high quality single-crystal production. Transport concepts are largely built upon equilibrium considerations, i. e. , on thermodynamic and phase equilibrium concepts. Hence to supply a "workable" foundation for the succeeding discussions, this text begins in Chapter 2 with a concise treatment of thermodynamics which emphasizes applications to mate rials preparation. After working through this chapter, the reader should feel at ease with often (particularly among physicists) unfamiliar entities such as chemical potentials, fugacities, activities. etc. Special sections on ther mochemical calculations (and their pitfalls) and compilations of thermochemi cal data conclude the second chapter. Crystal growth can be called. in a wide sense, the science and technology of controlling phase transitions that lead to (single crystalline) solids.
Author: H. Arend
Publisher: Springer
ISBN:
Category : Science
Languages : en
Pages : 448
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Book Description
Proceedings of a NATO ASI/13th Course of the International School of Crystallography held in Erice, Sicily, Italy, August 27-September 7, 1987
Author: Boyan Mutaftschiev
Publisher: Springer Science & Business Media
ISBN: 3662045915
Category : Science
Languages : en
Pages : 370
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Book Description
This textbook is for graduate students and young scientists, who are looking for an introduction to the physics and physical chemistry of crystal growth and nucleation phenomena.
Author: J.P. van der Eerden
Publisher: Springer Science & Business Media
ISBN: 940110137X
Category : Science
Languages : en
Pages : 399
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Book Description
1. The ninth International Summer School on Crystal Growth. ISSCG IX A complete theory of crystal growth establishes the full dependence of crystal size, shape and structure on external parameters like temperature, pressure, composition, purity, growth rate and stirring of the mother phase, implicitly establishing how the corresponding fields vary in space and time. Such a theory does not exist, however. Therefore equipment to grow crystals is developed on the basis of partial knowledge. Skill, experience and creativity still are of central importance for the success o~ a crystal growth system. In this book we collected contributions from the teachers of the ninth International Summer School on Crystal Growth ISSCG IX, held 11-16 june 1995 at Papendal, the national sports centre of the Netherlands. These contributions were used during the lectures. The authors have tried to present their work in such a way that only basic physical knowledge is required to understand the papers. The book can be used as an introduction to various important sub disciplines of the science and technology of crystal growth. Since, however the information content considerably exceeds a lecture note level and touches the present limits of understanding, it is an up to date handbook as well.
