Theoretical Studies of High Field Transport in III-V Semiconductors PDF Download
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Author: Hisashi Shichijo
Publisher:
ISBN:
Category : Electron transport
Languages : en
Pages : 328
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Book Description
Two theoretical aspects of high field transport in III-V semiconductors have been studied. First, a new mechanism to obtain negative differential resistance in a GaAs-AlGaAs multilayered structure is described. The mechanism is based on the transfer of electrons in real space from a high mobility GaAs region to an adjacent low mobility AlGaAs region when a high electric field is applied parallel to the interface. It is analogous in many respects to the Gunn effect, except that this mechanism allows greater control of device characteristics. These characteristics can be adjusted by varying the doping densities, the layer thicknesses, and the Al mode fraction in the AlGaAs. The mechanism is analyzed using the electron temperature model and the Monte Carlo simulation. The electron temperature model is exact in the high carrier density limit, whereas the Monte Carlo method is valid in the low density limit. Both methods clearly illustrate the degree of control possible with this mechanism over device characteristics. Comparisons are made between the two models. Miscellaneous effects which are neglected in the models are discussed. These include two-dimensional effects, band bending, statistical fluctuation, and quantum mechanical transmission at the interface.
Author: Hisashi Shichijo
Publisher:
ISBN:
Category : Electron transport
Languages : en
Pages : 328
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Book Description
Two theoretical aspects of high field transport in III-V semiconductors have been studied. First, a new mechanism to obtain negative differential resistance in a GaAs-AlGaAs multilayered structure is described. The mechanism is based on the transfer of electrons in real space from a high mobility GaAs region to an adjacent low mobility AlGaAs region when a high electric field is applied parallel to the interface. It is analogous in many respects to the Gunn effect, except that this mechanism allows greater control of device characteristics. These characteristics can be adjusted by varying the doping densities, the layer thicknesses, and the Al mode fraction in the AlGaAs. The mechanism is analyzed using the electron temperature model and the Monte Carlo simulation. The electron temperature model is exact in the high carrier density limit, whereas the Monte Carlo method is valid in the low density limit. Both methods clearly illustrate the degree of control possible with this mechanism over device characteristics. Comparisons are made between the two models. Miscellaneous effects which are neglected in the models are discussed. These include two-dimensional effects, band bending, statistical fluctuation, and quantum mechanical transmission at the interface.
Author: G. Y. Robinson
Publisher:
ISBN:
Category :
Languages : en
Pages : 9
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Book Description
The purpose of this three-year research program was to study electron transport in III-V semiconductors, starting with an investigation of ballistic transport in GaAs. Also for experimental studies of electron transport in the III-V semiconductors, test devices were to be constructed from submicron layers grown by molecular beam epitaxy. For ballistic electron transport in submicron GaAs devices, the influence of the boundary conditions were explained, a theory for low-field diode conductance was developed, the high-field diode impedance was calculated, and experimental data was compared to theoretical predictions. This work led to an investigation, both experimental and theoretical, of electron transport in the two-dimensional electron gas (TEG) of a modulation-doped heterostructure. The theoretical studies produced a model of electron transport in GaAs/AlGaAs modulation-doped structures and prediction of the electron mobility in TEG layers. The experimental work led to a new method of III-V heterojunction characterization and to an explanation of the temperature dependent behavior of a modulation-doped transistor.
Author: Kevin F. Brennan
Publisher: World Scientific
ISBN: 9810246714
Category : Technology & Engineering
Languages : en
Pages : 270
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Book Description
This book examines some of the charge carrier transport issues encountered in the field of modern semiconductor devices and novel materials. Theoretical approaches to the understanding and modeling of the relevant physical phenomena, seen in devices that have very small spatial dimensions and that operate under high electric field strength, are described in papers written by leading experts and pioneers in this field. In addition, the book examines the transport physics encountered in novel materials such as wide band gap semiconductors (GaN, SiC, etc.) as well as organic semiconductors. Topics in High Field Transport in Semiconductors provides a comprehensive overview that will be beneficial to newcomers as well as engineers and researchers engaged in this exciting field.
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 892
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Book Description
Author: David K. Ferry
Publisher: Springer Science & Business Media
ISBN: 1468436384
Category : Technology & Engineering
Languages : en
Pages : 620
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Book Description
The area of high field transport in semiconductors has been of interest since the early studies of dielectric breakdown in various materials. It really emerged as a sub-discipline of semiconductor physics in the early 1960's, following the discovery of substantial deviations from Ohm's law at high electric fields. Since that time, it has become a major area of importance in solid state electronics as semiconductor devices have operated at higher frequencies and higher powers. It has become apparent since the Modena Conference on Hot Electrons in 1973, that the area of hot electrons has ex tended weIl beyond the concept of semi-classical electrons (or holes) in homogeneous semiconductor materials. This was exemplified by the broad range of papers presented at the International Conference on Hot Electrons in Semiconductors, held in Denton, Texas, in 1977. Hot electron physics has progressed from a limited phenomeno logical science to a full-fledged experimental and precision theo retical science. The conceptual base and subsequent applications have been widened and underpinned by the development of ab initio nonlinear quantum transport theory which complements and identifies the limitations of the traditional semi-classical Boltzmann-Bloch picture. Such diverse areas as large polarons, pico-second laser excitation, quantum magneto-transport, sub-three dimensional systems, and of course device dynamics all have been shown to be strongly interactive with more classical hot electron pictures.
Author: Jagdeep Shah
Publisher: Elsevier
ISBN: 0080925707
Category : Science
Languages : en
Pages : 525
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Book Description
Nonequilibrium hot charge carriers play a crucial role in the physics and technology of semiconductor nanostructure devices. This book, one of the first on the topic, discusses fundamental aspects of hot carriers in quasi-two-dimensional systems and the impact of these carriers on semiconductor devices. The work will provide scientists and device engineers with an authoritative review of the most exciting recent developments in this rapidly moving field. It should be read by all those who wish to learn the fundamentals of contemporary ultra-small, ultra-fast semiconductor devices. - Topics covered include - Reduced dimensionality and quantum wells - Carrier-phonon interactions and hot phonons - Femtosecond optical studies of hot carrier - Ballistic transport - Submicron and resonant tunneling devices
Author: Kevin F. Brennan
Publisher: Cambridge University Press
ISBN: 9780521596626
Category : Science
Languages : en
Pages : 784
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Book Description
Modern fabrication techniques have made it possible to produce semiconductor devices whose dimensions are so small that quantum mechanical effects dominate their behavior. This book describes the key elements of quantum mechanics, statistical mechanics, and solid-state physics that are necessary in understanding these modern semiconductor devices. The author begins with a review of elementary quantum mechanics, and then describes more advanced topics, such as multiple quantum wells. He then disusses equilibrium and nonequilibrium statistical mechanics. Following this introduction, he provides a thorough treatment of solid-state physics, covering electron motion in periodic potentials, electron-phonon interaction, and recombination processes. The final four chapters deal exclusively with real devices, such as semiconductor lasers, photodiodes, flat panel displays, and MOSFETs. The book contains many homework exercises and is suitable as a textbook for electrical engineering, materials science, or physics students taking courses in solid-state device physics. It will also be a valuable reference for practising engineers in optoelectronics and related areas.
Author: Kevin F Brennan
Publisher: World Scientific
ISBN: 9814490733
Category : Technology & Engineering
Languages : en
Pages : 270
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Book Description
This book examines some of the charge carrier transport issues encountered in the field of modern semiconductor devices and novel materials. Theoretical approaches to the understanding and modeling of the relevant physical phenomena, seen in devices that have very small spatial dimensions and that operate under high electric field strength, are described in papers written by leading experts and pioneers in this field. In addition, the book examines the transport physics encountered in novel materials such as wide band gap semiconductors (GaN, SiC, etc.) as well as organic semiconductors. Topics in High Field Transport in Semiconductors provides a comprehensive overview that will be beneficial to newcomers as well as engineers and researchers engaged in this exciting field.
Author: Jack M. Higman
Publisher:
ISBN:
Category :
Languages : en
Pages : 122
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Book Description
In this thesis, the transport of electrons in silicon devices is studied numerically by solving the semiclassical Boltzmann transport equation using the Monte Carlo method. The important cases which are analyzed include both high electric fields and highly inhomogeneous fields. In each of these cases, a reasonably accurate solution of the Boltzmann equation is necessary, including accurate scattering rates and realistic band structure. A coupled Monte Carlo-Drift Diffusion model for n-MOSFET's is presented which takes advantage of the strengths of both types of calculation. Comparison of the calculated substrate current with experimental values indicates that the model is a valid approach to modeling hot electron effects in n-MOSFET's with effective channel lengths as short as 1 micron. Another type of semiconductor devices in which impact ionization is an important mechanism is the semiconductor cold cathode electron emitter. Such devices are of considerable technological interest for use as efficient, high current sources of free electrons. Silicon and GaAs p-n electron emitters have been simulated using a single-electron Monte Carlo transport program. The efficiency of the device is calculated as a function of both the work function and the top conducting channel thickness. The potential performance of GaAs devices is explored via the Monte Carlo simulation, and calculated results for the Si device are compared to published experimental data. The fundamentally nonlocal nature of the impact ionization process, due to its threshold nature, is investigated for the case of a rapidly (spatially) varying electric field. An exponentially increasing electric field is assumed, which is the form appropriate for the longitudinal field in the drain region of an n-MOSFET. The ionization coefficient, which is the quantity that gives the connection between the microscopic process and the macroscopically observable quantities, is calculated. An analytic expression for the ionization coefficient as a function of the electric field is deduced from the spatial variation of the ionization coefficient calculated by Monte Carlo simulations. The expression given here for the electron ionization coefficient depends only on the local electric field and a single length parameter describing the derivative of the field, and therefore can be used to incorporate nonlocal hot electron effects into conventional drift-diffusion device simulators.
Author:
Publisher:
ISBN:
Category : Military research
Languages : en
Pages : 604
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Book Description
