Author: Andrzej K. Jonscher
Publisher:
ISBN:
Category : Dielectrics
Languages : en
Pages : 124
Book Description
The Universal Dielectric Response
Author: Andrzej K. Jonscher
Publisher:
ISBN:
Category : Dielectrics
Languages : en
Pages : 124
Book Description
Publisher:
ISBN:
Category : Dielectrics
Languages : en
Pages : 124
Book Description
Proceedings of the Symposium on the Chemistry and Physics of Composite Media
Author: Micha Tomkiewicz
Publisher:
ISBN:
Category : Chemistry, Physical and theoretical
Languages : en
Pages : 390
Book Description
Publisher:
ISBN:
Category : Chemistry, Physical and theoretical
Languages : en
Pages : 390
Book Description
Handbook of Low and High Dielectric Constant Materials and Their Applications, Two-Volume Set
Author: Hari Singh Nalwa
Publisher: Elsevier
ISBN: 0080533531
Category : Science
Languages : en
Pages : 562
Book Description
Recent developments in microelectronics technologies have created a great demand for interlayer dielectric materials with a very low dielectric constant. They will play a crucial role in the future generation of IC devices (VLSI/UISI and high speed IC packaging). Considerable efforts have been made to develop new low as well as high dielectric constant materials for applications in electronics industries. Besides achieving either low or high dielectric constants, other materials' properties such as good processability, high mechanical strength, high thermal and environmental stability, low thermal expansion, low current leakage, low moisture absorption, corrosion resistant, etc., are of equal importance. Many chemical and physical strategies have been employed to get desired dielectric materials with high performance. This is a rapidly growing field of science--both in novel materials and their applications to future packing technologies. The experimental data on inorganic and organic materials having low or high dielectric constant remail scattered in the literature. It is timely, therfore, to consolidate the current knowledge on low and high dielectric constant materials into a sigle reference source. Handbook of Low and High Dielectric Constant Materials and Their Applications is aimed at bringing together under a sigle cover (in two volumes) all low and high dielectric constant materials currently studied in academic and industrial research covering all spects of inorgani an organic materials from their synthetic chemistry, processing techniques, physics, structure-property relationship to applications in IC devices. This book will summarize the current status of the field covering important scientific developments made over the past decade with contributions from internationally recognized experts from all over the world. Fully cross-referenced, this book has clear, precise, and wide appeal as an essential reference source for all those interested in low and high dielectric constant material.
Publisher: Elsevier
ISBN: 0080533531
Category : Science
Languages : en
Pages : 562
Book Description
Recent developments in microelectronics technologies have created a great demand for interlayer dielectric materials with a very low dielectric constant. They will play a crucial role in the future generation of IC devices (VLSI/UISI and high speed IC packaging). Considerable efforts have been made to develop new low as well as high dielectric constant materials for applications in electronics industries. Besides achieving either low or high dielectric constants, other materials' properties such as good processability, high mechanical strength, high thermal and environmental stability, low thermal expansion, low current leakage, low moisture absorption, corrosion resistant, etc., are of equal importance. Many chemical and physical strategies have been employed to get desired dielectric materials with high performance. This is a rapidly growing field of science--both in novel materials and their applications to future packing technologies. The experimental data on inorganic and organic materials having low or high dielectric constant remail scattered in the literature. It is timely, therfore, to consolidate the current knowledge on low and high dielectric constant materials into a sigle reference source. Handbook of Low and High Dielectric Constant Materials and Their Applications is aimed at bringing together under a sigle cover (in two volumes) all low and high dielectric constant materials currently studied in academic and industrial research covering all spects of inorgani an organic materials from their synthetic chemistry, processing techniques, physics, structure-property relationship to applications in IC devices. This book will summarize the current status of the field covering important scientific developments made over the past decade with contributions from internationally recognized experts from all over the world. Fully cross-referenced, this book has clear, precise, and wide appeal as an essential reference source for all those interested in low and high dielectric constant material.
Universal Relaxation Law
Author: Andrzej K. Jonscher
Publisher:
ISBN:
Category : Dielectric relaxation
Languages : en
Pages : 446
Book Description
Publisher:
ISBN:
Category : Dielectric relaxation
Languages : en
Pages : 446
Book Description
NIST Technical Note
Author:
Publisher:
ISBN:
Category : Physical instruments
Languages : en
Pages : 558
Book Description
Publisher:
ISBN:
Category : Physical instruments
Languages : en
Pages : 558
Book Description
Physics Of Semiconductors - Proceedings Of The 20th International Conference (In 3 Volumes)
Author: E M Anastassakis
Publisher: World Scientific
ISBN: 9814583634
Category :
Languages : en
Pages : 2768
Book Description
Gathering top experts in the field, the 20th ICPS proceedings reviews the progress in all aspects of semiconductor physics. The proceedings will include state-of-the-art lectures with special emphasis on exciting new developments. It should serve as excellent material for researchers in this and related fields.
Publisher: World Scientific
ISBN: 9814583634
Category :
Languages : en
Pages : 2768
Book Description
Gathering top experts in the field, the 20th ICPS proceedings reviews the progress in all aspects of semiconductor physics. The proceedings will include state-of-the-art lectures with special emphasis on exciting new developments. It should serve as excellent material for researchers in this and related fields.
Advances and Applications in Electroceramics II
Author: K. M. Nair
Publisher: John Wiley & Sons
ISBN: 1118511360
Category : Technology & Engineering
Languages : en
Pages : 258
Book Description
With contributed papers from the 2011 Materials Science & Technology symposia, this is a useful one-stop resource for understanding the most important issues in the advances and applications of electroceramics. Logically organized and carefully selected, the articles cover the themes of the symposia: Magnetoelectric Multiferroic Thin Films and Multilayers; Dielectric Ceramic Materials and Electronic Devices; and Multifunctional Oxide. An essential reference for government labs and academics in mechanical and chemical engineering, materials and or ceramics, and chemistry.
Publisher: John Wiley & Sons
ISBN: 1118511360
Category : Technology & Engineering
Languages : en
Pages : 258
Book Description
With contributed papers from the 2011 Materials Science & Technology symposia, this is a useful one-stop resource for understanding the most important issues in the advances and applications of electroceramics. Logically organized and carefully selected, the articles cover the themes of the symposia: Magnetoelectric Multiferroic Thin Films and Multilayers; Dielectric Ceramic Materials and Electronic Devices; and Multifunctional Oxide. An essential reference for government labs and academics in mechanical and chemical engineering, materials and or ceramics, and chemistry.
Practical Guide to Materials Characterization
Author: Khalid Sultan
Publisher: John Wiley & Sons
ISBN: 352783883X
Category : Technology & Engineering
Languages : en
Pages : 228
Book Description
Practical Guide to Materials Characterization Practice-oriented resource providing a hands-on overview of the most relevant materials characterization techniques in chemistry, physics, engineering, and more Practical Guide to Materials Characterization focuses on the most widely used experimental approaches for structural, morphological, and spectroscopic characterization of materials, providing background, insights on the correct usage of the respective techniques, and the interpretation of the results. With a focus on practical applications, the work illustrates what to use and when, including real-life examples showing which characterization techniques are best suited for particular purposes. Furthermore, the work covers the practical elements of the analytical techniques used to characterize a wide range of functional materials (both in bulk as well as thin film form) in a simple but thorough manner. To aid in reader comprehension, Practical Guide to Materials Characterization is divided into eight distinct chapters. To set the stage, the first chapter of the book reviews the fundamentals of materials characterization that are necessary to understand and use the methods presented in the ensuing chapters. Among the techniques covered are X-ray diffraction, Raman spectroscopy, X-ray spectroscopy, electron microscopies, magnetic measurement techniques, infrared spectroscopy, and dielectric measurements. Specific sample topics covered in the remaining seven chapters include: Bragg’s Law, the Von Laue Treatment, Laue’s Equation, the Rotating Crystal Method, the Powder Method, orientation of single crystals, and structure of polycrystalline aggregates Classical theory of Raman scattering, quantum theory of Raman spectroscopy, high-pressure Raman spectroscopy, and surface enhanced Raman spectroscopy Basic principles of XAS, energy referencing, XPS spectra and its features, Auger Electron Spectroscopy (AES), and interaction of electrons with matter Magnetization measuring instruments, the SQUID magnetometer, and the advantages and disadvantages of vibrating sample magnetometer (VSM) With comprehensive and in-depth coverage of the subject, Practical Guide to Materials Characterization is a key resource for practicing professionals who wish to better understand key concepts in the field and seamlessly harness them in a myriad of applications across many different industries.
Publisher: John Wiley & Sons
ISBN: 352783883X
Category : Technology & Engineering
Languages : en
Pages : 228
Book Description
Practical Guide to Materials Characterization Practice-oriented resource providing a hands-on overview of the most relevant materials characterization techniques in chemistry, physics, engineering, and more Practical Guide to Materials Characterization focuses on the most widely used experimental approaches for structural, morphological, and spectroscopic characterization of materials, providing background, insights on the correct usage of the respective techniques, and the interpretation of the results. With a focus on practical applications, the work illustrates what to use and when, including real-life examples showing which characterization techniques are best suited for particular purposes. Furthermore, the work covers the practical elements of the analytical techniques used to characterize a wide range of functional materials (both in bulk as well as thin film form) in a simple but thorough manner. To aid in reader comprehension, Practical Guide to Materials Characterization is divided into eight distinct chapters. To set the stage, the first chapter of the book reviews the fundamentals of materials characterization that are necessary to understand and use the methods presented in the ensuing chapters. Among the techniques covered are X-ray diffraction, Raman spectroscopy, X-ray spectroscopy, electron microscopies, magnetic measurement techniques, infrared spectroscopy, and dielectric measurements. Specific sample topics covered in the remaining seven chapters include: Bragg’s Law, the Von Laue Treatment, Laue’s Equation, the Rotating Crystal Method, the Powder Method, orientation of single crystals, and structure of polycrystalline aggregates Classical theory of Raman scattering, quantum theory of Raman spectroscopy, high-pressure Raman spectroscopy, and surface enhanced Raman spectroscopy Basic principles of XAS, energy referencing, XPS spectra and its features, Auger Electron Spectroscopy (AES), and interaction of electrons with matter Magnetization measuring instruments, the SQUID magnetometer, and the advantages and disadvantages of vibrating sample magnetometer (VSM) With comprehensive and in-depth coverage of the subject, Practical Guide to Materials Characterization is a key resource for practicing professionals who wish to better understand key concepts in the field and seamlessly harness them in a myriad of applications across many different industries.
Physics of Dielectrics for the Engineer
Author: Roland Coelho
Publisher: Elsevier
ISBN: 0444601805
Category : Science
Languages : en
Pages : 188
Book Description
Physics of Dielectrics for the Engineer is a systematic attempt to clarify and correlate advanced concepts underlying the physics of dielectrics. It reviews the basics of electrostatics, the different models for the polarizability of atoms and molecules, and the macroscopic permittivity. It also discusses the behavior of matter in an alternating field in relation to complex permittivity, the interactions between field and matter, dissipative effects under high electric fields, the wide-gap semiconductor model, the types of charge carriers, and the main disruptive processes. Organized into three parts encompassing 12 chapters, this volume begins with an overview of the physical concepts involved in the behavior of insulating materials subjected to high electric fields. It then explores the potential of a group of charges, and dipoles induced in an applied field. The book explains statistical theories of dipole orientation in an applied field and theories relating molecular and macroscopic quantities. The propagation of an electromagnetic wave, dipole relaxation of defects in crystal lattices, and space-charge polarization and relaxation are also discussed. The book explains the uni-dimensional polar lattice, intrinsic and impurity conduction in wide-gap semiconductors, thermal runaway, and collision breakdown. Many problems with corresponding solutions are included to assist the reader. This book will benefit electrical engineers, as well as electrical engineering students, scientists, and technicians.
Publisher: Elsevier
ISBN: 0444601805
Category : Science
Languages : en
Pages : 188
Book Description
Physics of Dielectrics for the Engineer is a systematic attempt to clarify and correlate advanced concepts underlying the physics of dielectrics. It reviews the basics of electrostatics, the different models for the polarizability of atoms and molecules, and the macroscopic permittivity. It also discusses the behavior of matter in an alternating field in relation to complex permittivity, the interactions between field and matter, dissipative effects under high electric fields, the wide-gap semiconductor model, the types of charge carriers, and the main disruptive processes. Organized into three parts encompassing 12 chapters, this volume begins with an overview of the physical concepts involved in the behavior of insulating materials subjected to high electric fields. It then explores the potential of a group of charges, and dipoles induced in an applied field. The book explains statistical theories of dipole orientation in an applied field and theories relating molecular and macroscopic quantities. The propagation of an electromagnetic wave, dipole relaxation of defects in crystal lattices, and space-charge polarization and relaxation are also discussed. The book explains the uni-dimensional polar lattice, intrinsic and impurity conduction in wide-gap semiconductors, thermal runaway, and collision breakdown. Many problems with corresponding solutions are included to assist the reader. This book will benefit electrical engineers, as well as electrical engineering students, scientists, and technicians.
Fractional Kinetics in Solids
Author: Vladimir Vasilʹevich Uchaĭkin
Publisher: World Scientific
ISBN: 9814355429
Category : Mathematics
Languages : en
Pages : 274
Book Description
The standard (Markovian) transport model based on the Boltzmann equation cannot describe some non-equilibrium processes called anomalous that take place in many disordered solids. Causes of anomality lie in non-uniformly scaled (fractal) spatial heterogeneities, in which particle trajectories take cluster form. Furthermore, particles can be located in some domains of small sizes (traps) for a long time. Estimations show that path length and waiting time distributions are often characterized by heavy tails of the power law type. This behavior allows the introduction of time and space derivatives of fractional orders. Distinction of path length distribution from exponential is interpreted as a consequence of media fractality, and analogous property of waiting time distribution as a presence of memory. In this book, a novel approach using equations with derivatives of fractional orders is applied to describe anomalous transport and relaxation in disordered semiconductors, dielectrics and quantum dot systems. A relationship between the self-similarity of transport, the Levy stable limiting distributions and the kinetic equations with fractional derivatives is established. It is shown that unlike the well-known Scher Montroll and Arkhipov Rudenko models, which are in a sense alternatives to the normal transport model, fractional differential equations provide a unified mathematical framework for describing normal and dispersive transport. The fractional differential formalism allows the equations of bipolar transport to be written down and transport in distributed dispersion systems to be described. The relationship between fractional transport equations and the generalized limit theorem reveals the probabilistic aspects of the phenomenon in which a dispersive to Gaussian transport transition occurs in a time-of-flight experiment as the applied voltage is decreased and/or the sample thickness increased. Recent experiments devoted to studies of transport in quantum dot arrays are discussed in the framework of dispersive transport models. The memory phenomena in systems under consideration are discussed in the analysis of fractional equations. It is shown that the approach based on the anomalous transport models and the fractional kinetic equations may be very useful in some problems that involve nano-sized systems. These are photon counting statistics of blinking single quantum dot fluorescence, relaxation of current in colloidal quantum dot arrays, and some others.
Publisher: World Scientific
ISBN: 9814355429
Category : Mathematics
Languages : en
Pages : 274
Book Description
The standard (Markovian) transport model based on the Boltzmann equation cannot describe some non-equilibrium processes called anomalous that take place in many disordered solids. Causes of anomality lie in non-uniformly scaled (fractal) spatial heterogeneities, in which particle trajectories take cluster form. Furthermore, particles can be located in some domains of small sizes (traps) for a long time. Estimations show that path length and waiting time distributions are often characterized by heavy tails of the power law type. This behavior allows the introduction of time and space derivatives of fractional orders. Distinction of path length distribution from exponential is interpreted as a consequence of media fractality, and analogous property of waiting time distribution as a presence of memory. In this book, a novel approach using equations with derivatives of fractional orders is applied to describe anomalous transport and relaxation in disordered semiconductors, dielectrics and quantum dot systems. A relationship between the self-similarity of transport, the Levy stable limiting distributions and the kinetic equations with fractional derivatives is established. It is shown that unlike the well-known Scher Montroll and Arkhipov Rudenko models, which are in a sense alternatives to the normal transport model, fractional differential equations provide a unified mathematical framework for describing normal and dispersive transport. The fractional differential formalism allows the equations of bipolar transport to be written down and transport in distributed dispersion systems to be described. The relationship between fractional transport equations and the generalized limit theorem reveals the probabilistic aspects of the phenomenon in which a dispersive to Gaussian transport transition occurs in a time-of-flight experiment as the applied voltage is decreased and/or the sample thickness increased. Recent experiments devoted to studies of transport in quantum dot arrays are discussed in the framework of dispersive transport models. The memory phenomena in systems under consideration are discussed in the analysis of fractional equations. It is shown that the approach based on the anomalous transport models and the fractional kinetic equations may be very useful in some problems that involve nano-sized systems. These are photon counting statistics of blinking single quantum dot fluorescence, relaxation of current in colloidal quantum dot arrays, and some others.