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Languages : en
Pages :
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The Physics, Design, Growth, and Characterization of Millimeter-wave Indium Arsenide
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Category :
Languages : en
Pages :
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Publisher:
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Category :
Languages : en
Pages :
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Material Characterization and Process Development for Indium-arsenide
Author: Rohan K. Bambery
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Category :
Languages : en
Pages :
Book Description
Efforts to push the performance of transistors for millimeter-wave and microwave applications have borne fruit through device size scaling and the use of novel material systems. III-V semiconductors and their alloys hold a distinct advantage over silicon because they have much higher electron mobility which is a prerequisite for high frequency operation. InGaAs/InP pseudomorphic heterojunction bipolar transistors (HBTs) have demonstrated fT of 765 GHz at room temperature and InP based high electron mobility transistors (HEMTs) have demonstrated fMax of 1.2 THz. The 6.1 A lattice family of InAs, GaSb, AlSb covers a wide variety of band gaps and is an attractive future material system for high speed device development. Extremely high electron mobilities ~ 30,000 cm^2 V^-1s^-1 have been achieved in modulation doped InAs-AlSb structures. The work described in this thesis involves material characterization and process development for HEMT fabrication on this material system.
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Efforts to push the performance of transistors for millimeter-wave and microwave applications have borne fruit through device size scaling and the use of novel material systems. III-V semiconductors and their alloys hold a distinct advantage over silicon because they have much higher electron mobility which is a prerequisite for high frequency operation. InGaAs/InP pseudomorphic heterojunction bipolar transistors (HBTs) have demonstrated fT of 765 GHz at room temperature and InP based high electron mobility transistors (HEMTs) have demonstrated fMax of 1.2 THz. The 6.1 A lattice family of InAs, GaSb, AlSb covers a wide variety of band gaps and is an attractive future material system for high speed device development. Extremely high electron mobilities ~ 30,000 cm^2 V^-1s^-1 have been achieved in modulation doped InAs-AlSb structures. The work described in this thesis involves material characterization and process development for HEMT fabrication on this material system.
Design, Fabrication, and Characterization of Indium Arsenide
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Languages : en
Pages :
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Languages : en
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Properties of Indium Arsenide Surfaces and Heterostructures
Author: Cedric Marc Affentauschegg
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Category :
Languages : en
Pages : 376
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 376
Book Description
Scientific and Technical Aerospace Reports
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Category : Aeronautics
Languages : en
Pages : 702
Book Description
Publisher:
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Category : Aeronautics
Languages : en
Pages : 702
Book Description
The Molecular Beam Epitaxial Growth and Characterization of Indium Gallium Arsenide and Silicon Substrates
Author: David Ian Westwood
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Category :
Languages : en
Pages : 432
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 432
Book Description
The Molecular Beam Epitaxial Growth and Characterization of Indium Gallium Arsenide on Gallium Arsenide and Silicon Substrates
Author: David Ian Westwood
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Languages : en
Pages :
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Languages : en
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Dissertation Abstracts International
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Category : Dissertations, Academic
Languages : en
Pages : 668
Book Description
Publisher:
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Category : Dissertations, Academic
Languages : en
Pages : 668
Book Description
American Doctoral Dissertations
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Category : Dissertation abstracts
Languages : en
Pages : 796
Book Description
Publisher:
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Category : Dissertation abstracts
Languages : en
Pages : 796
Book Description
Physics Briefs
Author:
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Category : Physics
Languages : en
Pages : 1058
Book Description
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1058
Book Description