The Physics and Operations of Ultra-Submicron Length Semiconductor Devices PDF Download
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Languages : en
Pages : 108
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Category :
Languages : en
Pages : 108
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Author: Lauren C. Post
Publisher:
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Category : Agriculture
Languages : en
Pages : 12
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Author: David K. Ferry
Publisher: Springer Science & Business Media
ISBN: 1461532841
Category : Science
Languages : en
Pages : 409
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Book Description
The purposes of this book are many. First, we must point out that it is not a device book, as a proper treatment of the range of important devices would require a much larger volume even without treating the important physics for submicron devices. Rather, the book is written principally to pull together and present in a single place, and in a (hopefully) uniform treatment, much of the understanding on relevant physics for submicron devices. Indeed, the understand ing that we are trying to convey through this work has existed in the literature for quite some time, but has not been brought to the full attention of those whose business is the making of submicron devices. It should be remarked that much of the important physics that is discussed here may not be found readily in devices at the 1.0-JLm level, but will be found to be dominant at the O.I-JLm level. The range between these two is rapidly being covered as technology moves from the 256K RAM to the 16M RAM chips.
Author: Harold L. Grubin
Publisher: Springer Science & Business Media
ISBN: 9780306429866
Category : Science
Languages : en
Pages : 762
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Book Description
The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES.................. .......... 1 E. Constant BOLTZMANN TRANSPORT EQUATION... ... ...... .................... 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . .. . . . . .. . . . .. . .. . .... ... .. . . . .. . . . .. . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES.................. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES.......................... 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES......................................... 223 C. Calandra DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES........... 253 W. Monch ENSEMBLE MONTE CARLO TECHNIqUES............................. 289 C. Jacoboni NOISE AND DIFFUSION IN SUBMICRON STRUCTURES................. 323 L. Reggiani SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . K. Hess SUBMICRON LITHOGRAPHY 373 C. D. W. Wilkinson and S. P. Beaumont QUANTUM EFFECTS IN DEVICE STRUCTURES DUE TO SUBMICRON CONFINEMENT IN ONE DIMENSION.... ....................... 401 B. D. McCombe vii viii CONTENTS PHYSICS OF HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES..... 445 P. J. Price CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY TRANSPORT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 477 . . . . . . . . . . . . J. J. Niez DEVICE-DEVICE INTERACTIONS............ ...................... 503 D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER FUNCTION................... 521 G. J. Iafrate FAR INFRARED MEASUREMENTS OF VELOCITY OVERSHOOT AND HOT ELECTRON DYNAMICS IN SEMICONDUCTOR DEVICES............. 577 S. J. Allen, Jr.
Author: Ashish Raman
Publisher: CRC Press
ISBN: 1000577236
Category : Technology & Engineering
Languages : en
Pages : 410
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Book Description
This comprehensive reference text discusses novel semiconductor devices, including nanostructure field-effect transistors, photodiodes, high electron mobility transistors, and oxide-based devices. The text covers submicron semiconductor devices, device modeling, novel materials for devices, novel semiconductor devices, optimization techniques, and their application in detail. It covers such important topics as negative capacitance devices, surface-plasmon resonance devices, Fermi-level pinning, external stimuli-based optimization techniques, optoelectronic devices, and architecture-based optimization techniques. The book: Covers novel semiconductor devices with submicron dimensions Discusses comprehensive device optimization techniques Examines conceptualization and modeling of semiconductor devices Covers circuit and sensor-based application of the novel devices Discusses novel materials for next-generation devices This text will be useful for graduate students and professionals in fields including electrical engineering, electronics and communication engineering, materials science, and nanoscience.
Author: Harold L Grubin
Publisher: Springer
ISBN: 9781489923837
Category :
Languages : en
Pages : 748
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Author:
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ISBN:
Category :
Languages : en
Pages : 215
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The evolutionary decrease in the size of an individual semiconductor device continues with no apparent end of the process in sight. As a consequence, it is quite likely that critical dimensions will soon be comparable to quantum coherence lengths for the particles 'Involved in the transport within the device. Generally, quantum transport differs from semi-classical transport in the utilization of a quantum kinetic equation (as opposed to the Boltzmann transport equation). These quantum kinetic equations can be developed for the density matrix, the Wigner distribution function, and real-time Green's functions, as well as for many reduced approximations to these quantities. In this review, we study how these various approaches are connected as well as how they offer different views into the quantum behavior within devices.
Author: Harold L. Grubin
Publisher: Springer Science & Business Media
ISBN: 1461327776
Category : Science
Languages : en
Pages : 349
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Book Description
Research on electronic transport in ultra small dimensions has been highly stimulated by the sensational developments in silicon technology and very large scale integration. The papers in this volume, however, have been influenced to no lesser extent by the advent of molecular beam epitaxy and metal/organic chemical vapor deposition which has made possible the control of semiconductor boundaries on a quantum level. This new control of boundary condi tions in ultra small electronic research is the mathematical reason for a whole set of innovative ideas. For the first time in the history of semiconductors, it is possible to design device functions from physical considerations involving ~ngstom scale dimensions. At the time the meeting was held, July 1982, it was one of the first strong signals of the powerful developments in this area. During the meeting, important questions have been answered concerning ballistic transport, Monte Carlo simulations of high field transport and other developments pertinent to new device concepts and the understanding of small devices from physics to function. The committee members want to express their deep appreciation to the speakers who have made the meeting a success. The USER pro ject of DOD has been a vital stimulous and thanks go to the Army Research Office and the Office of Naval Research for financial sup port. Urbana, January 1984 K. Hess, Conference Chairman J. R. Brews L. R. Cooper, Ex Officio D. K. Ferry H. L. Grubin G. J. Iafrate M. I. Nathan A. F.
Author: D. A. Fraser
Publisher: Oxford University Press, USA
ISBN:
Category : Science
Languages : en
Pages : 162
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Author: H. L. Grubin
Publisher:
ISBN:
Category :
Languages : en
Pages : 494
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Book Description
The study encompasses a broad examination of transport in submicron and near-micron semiconductor devices through implementation of the moments of the Boltzmann transport equation and the semiconductor drift and diffusion equation. The study utilized advanced algorithms developed at Scientific Research Associates, and recommends development of a network of user based algorithms for closely combined theoretical/experimental interactions. Keywords: Boltzmann transport, Transients, Overshoot, Gallium arsenides, Silicon.
