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Author: Mohamed Henini
Publisher: Newnes
ISBN: 0123918596
Category : Technology & Engineering
Languages : en
Pages : 745
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Book Description
This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a 'how to' on processing molecular or atomic beams that occur on a surface of a heated crystalline substrate in a vacuum.MBE has expanded in importance over the past thirty years (in terms of unique authors, papers and conferences) from a pure research domain into commercial applications (prototype device structures and more at the advanced research stage). MBE is important because it enables new device phenomena and facilitates the production of multiple layered structures with extremely fine dimensional and compositional control. The techniques can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. This book covers the advances made by MBE both in research and mass production of electronic and optoelectronic devices. It includes new semiconductor materials, new device structures which are commercially available, and many more which are at the advanced research stage. - Condenses fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Coverage of MBE as mass production epitaxial technology enhances processing efficiency and throughput for semiconductor industry and nanostructured semiconductor materials research community
Author: Mohamed Henini
Publisher: Newnes
ISBN: 0123918596
Category : Technology & Engineering
Languages : en
Pages : 745
Get Book Here
Book Description
This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a 'how to' on processing molecular or atomic beams that occur on a surface of a heated crystalline substrate in a vacuum.MBE has expanded in importance over the past thirty years (in terms of unique authors, papers and conferences) from a pure research domain into commercial applications (prototype device structures and more at the advanced research stage). MBE is important because it enables new device phenomena and facilitates the production of multiple layered structures with extremely fine dimensional and compositional control. The techniques can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. This book covers the advances made by MBE both in research and mass production of electronic and optoelectronic devices. It includes new semiconductor materials, new device structures which are commercially available, and many more which are at the advanced research stage. - Condenses fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Coverage of MBE as mass production epitaxial technology enhances processing efficiency and throughput for semiconductor industry and nanostructured semiconductor materials research community
Author:
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2668
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Book Description
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 770
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Book Description
Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 1860
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Book Description
Author: C.G. Van de Walle
Publisher: Elsevier
ISBN: 0444599177
Category : Science
Languages : en
Pages : 635
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Book Description
Wide-band-gap semiconductors have been a research topic for many decades. However, it is only in recent years that the promise for technological applications came to be realized; simultaneously an upsurge of experimental and theoretical activity in the field has been witnessed. Semiconductors with wide band gaps exhibit unique electronic and optical properties. Their low intrinsic carrier concentrations and high breakdown voltage allow high-temperature and high-power applications (diamond, SiC etc.). The short wavelength of band-to-band transitions allows emission in the green, blue, or even UV region of the spectrum (ZnSe, GaN, etc.). In addition, many of these materials have favorable mechanical and thermal characteristics. These proceedings reflect the exciting progress made in this field. Successful p-type doping of ZnSe has recently led to the fabrication of blue-green injection lasers in ZnSe; applications of short-wavelength light-emitting devices range from color displays to optical storage. In SiC, advances in growth techniques for bulk as well as epitaxial material have made the commercial production of high-temperature and high-frequency devices possible. For GaN, refinement of growth procedures and new ways of obtaining doped material have resulted in blue-light-emitting diodes and opened the road to the development of laser diodes. Finally, while the quality of artificial diamond is not yet high enough for electronic applications, the promise it holds in terms of unique material properties is encouraging intense activity in the field. This volume contains contributions from recognized experts presently working on different material systems in the field. The papers cover the theoretical, experimental and application-oriented aspects of this exciting topic.
Author: American Ceramic Society
Publisher:
ISBN:
Category : Ceramics
Languages : en
Pages : 1150
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Book Description
Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1248
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Book Description
Author: H. A. Atwater
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 472
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Book Description
With over 16 countries represented, this book represents international developments in the field of film synthesis and growth using energetic beams. It focuses on pulsed-laser deposition. Fundamental issues pertaining to the generation of laser ablation plumes, temperature distributions and collisional effects are described. Ion-assisted pulsed-laser deposition, pulsed-ion deposition, applications of hyperthermal beams and aspects of surface dynamics are discussed. The inclusion of an ion beam with the ablation process leads to some unique modifications in the thin-film growth mechanisms, and hence, film properties. Likewise, the collision of high-mass metal cluster ions with substrates shows promise for growth of novel structures. Also featured are new developments of optoelectronic materials, nitrides and carbon films using a variety of techniques. The effects of beam-induced defects on growth and surface morphology, chemical effects during growth, and characterization of film growth and film properties are addressed.
Author:
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 744
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Book Description
Author: Stephen J. Pearton
Publisher: CRC Press
ISBN: 1000448428
Category : Science
Languages : en
Pages : 556
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Book Description
Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.
