The Effects of Ionizing Radiation on Transistor Gain PDF Download
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Author: D. L. Nelson
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 28
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Book Description
Transistor gain is reduced by ioizing radiation, which affects the transistor surface, and by displacement radiation, which causes lattice defects. The investigation of ionizing radiation damage described in this paper was accomplished with X-rays of photon energy less than 150 kev, which is below the energy necessary for displacement damage in silicon. Experiments were performed on silicon dioxide passivated silicon planar transistors with open leads, in a normal amplifying mode and with other junction bias conditions. AC and DC gain measurements at various injection levels showed a gain degradation dependence on the operating bias conditions. Open leads and back-biasing of each junction during irradiation resulted in considerable damage, with almost complete recovery occurring in most transistors tested when the base emitter junction was forward-biased. Many of the characteristics of the radiation damage observed can be explained by Atalla's model that charge collection at the surface causes a widening of the space charge region, thus increasing the recombination-generation current.
Author: D. L. Nelson
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 28
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Book Description
Transistor gain is reduced by ioizing radiation, which affects the transistor surface, and by displacement radiation, which causes lattice defects. The investigation of ionizing radiation damage described in this paper was accomplished with X-rays of photon energy less than 150 kev, which is below the energy necessary for displacement damage in silicon. Experiments were performed on silicon dioxide passivated silicon planar transistors with open leads, in a normal amplifying mode and with other junction bias conditions. AC and DC gain measurements at various injection levels showed a gain degradation dependence on the operating bias conditions. Open leads and back-biasing of each junction during irradiation resulted in considerable damage, with almost complete recovery occurring in most transistors tested when the base emitter junction was forward-biased. Many of the characteristics of the radiation damage observed can be explained by Atalla's model that charge collection at the surface causes a widening of the space charge region, thus increasing the recombination-generation current.
Author: Daniel Paul Peletier
Publisher:
ISBN:
Category :
Languages : en
Pages : 108
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Book Description
An experiment, in which 15 npn bipolar silicon transistors were exposed to Co60 gamma radiation, is described. The known theory concerning the radiation damage of transistors is presented. In addition, the distinguishing characteristics of ionizing radiation damage are discussed, and a method of estimating bulk damage is developed. During the experiment, the following transistor parameters were measured: AC and DC common emitter current gain, collector-to-base leakage current, gain-bandwidth product, and base spreading resistance. The damage curves for leakage current and AC and DC common emitter current gain are plotted and discussed. The relation between transistor parameter degradation and bias current is investigated by dividing the transistors into three equal groups and biasing them at three different collector levels during irradiation. The recovery of leakage current is plotted and an exponential curve fitted to the data. Recovery time of current gain is qualitatively observed. Data indicate that in some transistors damage to leakage current peaks near an accumulated radiation dose of 100,000 rad. The value of this peak is as large as 300 times the final damage value. The recovery time constant of leakage current damage is less than 15 minutes for the transistors tested. (Author).
Author: George Messenger
Publisher: Springer
ISBN:
Category : Juvenile Nonfiction
Languages : en
Pages : 984
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Book Description
Author:
Publisher: ASTM International
ISBN:
Category : Electronic apparatus and appliances
Languages : en
Pages : 248
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Book Description
Author:
Publisher:
ISBN:
Category : Electronic apparatus and appliances
Languages : en
Pages : 256
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Book Description
Author: H. L. Chambers
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 26
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Book Description
Gain degradation rates were obtained for various transistor operating conditions of current and voltage during Cobalt 60 irradiation and compared with the degradation rate for a radiation exposure in the passive state. The effects of emitter current alone, collector voltage alone, and normal transistor operating modes were studied. The results showed that increasing levels of carrier injection from the emitter caused decreasing rates of damage. For a 2N1613 type silicon transistor, the maximum reduction observed was approximately a factor of 2. This behavior is believed to be due to an alteration of the charge state of the radiation induced defect at the time the defect is formed. A lesser dependency with collector voltage was also observed. The effects of temperature in the range 105 F to 140 F, during gamma irradiation, were found to be small in comparison with the effects of active-passive current variations. Tests conducted in a neutron environment, where normal transistor operating modes were compared with the passive irradiation state, indicated very little influence upon damage rate.
Author: Marta Bagatin
Publisher: CRC Press
ISBN: 1498722636
Category : Technology & Engineering
Languages : en
Pages : 394
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Book Description
Ionizing Radiation Effects in Electronics: From Memories to Imagers delivers comprehensive coverage of the effects of ionizing radiation on state-of-the-art semiconductor devices. The book also offers valuable insight into modern radiation-hardening techniques. The text begins by providing important background information on radiation effects, their underlying mechanisms, and the use of Monte Carlo techniques to simulate radiation transport and the effects of radiation on electronics. The book then: Explains the effects of radiation on digital commercial devices, including microprocessors and volatile and nonvolatile memories—static random-access memories (SRAMs), dynamic random-access memories (DRAMs), and Flash memories Examines issues like soft errors, total dose, and displacement damage, together with hardening-by-design solutions for digital circuits, field-programmable gate arrays (FPGAs), and mixed-analog circuits Explores the effects of radiation on fiber optics and imager devices such as complementary metal-oxide-semiconductor (CMOS) sensors and charge-coupled devices (CCDs) Featuring real-world examples, case studies, extensive references, and contributions from leading experts in industry and academia, Ionizing Radiation Effects in Electronics: From Memories to Imagers is suitable both for newcomers who want to become familiar with radiation effects and for radiation experts who are looking for more advanced material or to make effective use of beam time.
Author: Boeing Company
Publisher:
ISBN:
Category : Transistors
Languages : en
Pages : 244
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Book Description
This report investigates ionization induced surface effects on transistors.
Author: C. C. Berggren
Publisher:
ISBN:
Category :
Languages : en
Pages : 108
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Book Description
Author: Yabin Sun
Publisher: Springer
ISBN: 9811046123
Category : Technology & Engineering
Languages : en
Pages : 187
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Book Description
This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.
