The Effect of Surface Orientation on Silicon Oxidation Kinetics

The Effect of Surface Orientation on Silicon Oxidation Kinetics PDF Author: E. A. Lewis
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ISBN:
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Languages : en
Pages : 36

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Book Description
It is well established that the rate of thermal oxidation of silicon depends on the surface orientation, but a comprehensive model for the role of the surface orientation in the kinetic mechanism is lacking. The results of several experiments designed to develop a better understanding of which surface properties are most important in establishing the oxidation rate are reported. The results indicate that the Si surface atom density is important in the initial stages of oxidation and a revised explanation for the crossover effect is proposed.