Author: Carl Raymond Pearson
Publisher:
ISBN:
Category : Oxygen
Languages : en
Pages : 88
Book Description
The Development of a Miniaturized Heater for Thin Film Oxygen Partial Pressure Sensors
Author: Carl Raymond Pearson
Publisher:
ISBN:
Category : Oxygen
Languages : en
Pages : 88
Book Description
Publisher:
ISBN:
Category : Oxygen
Languages : en
Pages : 88
Book Description
Feasibility of Miniaturizing a Heater for a Thin-film Oxygen Partial-pressure Sensor
Author: Carl R. Pearson
Publisher:
ISBN:
Category : Pressure transducers
Languages : en
Pages : 28
Book Description
Publisher:
ISBN:
Category : Pressure transducers
Languages : en
Pages : 28
Book Description
NASA Technical Note
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 464
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 464
Book Description
Thin Film Oxygen Partial Pressure Sensor
Author: J. J. Wortman
Publisher:
ISBN:
Category : Oxygen
Languages : en
Pages : 100
Book Description
The development is described of a laboratory model oxygen partial pressure sensor using a sputtered zinc oxide thin film. The film is operated at about 400 C through the use of a miniature silicon bar. Because of the unique resistance versus temperature relation of the silicon bar, control of the operational temperature is achieved by controlling the resistance. A circuit for accomplishing this is described. The response of sputtered zinc oxide films of various thicknesses to oxygen, nitrogen, argon, carbon dioxide, and water vapor caused a change in the film resistance. Over a large range, film conductance varied approximately as the square root of the oxygen partial pressure. The presence of water vapor in the gas stream caused a shift in the film conductance at a given oxygen partial pressure. A theoretical model is presented to explain the characteristic features of the zinc oxide response to oxygen.
Publisher:
ISBN:
Category : Oxygen
Languages : en
Pages : 100
Book Description
The development is described of a laboratory model oxygen partial pressure sensor using a sputtered zinc oxide thin film. The film is operated at about 400 C through the use of a miniature silicon bar. Because of the unique resistance versus temperature relation of the silicon bar, control of the operational temperature is achieved by controlling the resistance. A circuit for accomplishing this is described. The response of sputtered zinc oxide films of various thicknesses to oxygen, nitrogen, argon, carbon dioxide, and water vapor caused a change in the film resistance. Over a large range, film conductance varied approximately as the square root of the oxygen partial pressure. The presence of water vapor in the gas stream caused a shift in the film conductance at a given oxygen partial pressure. A theoretical model is presented to explain the characteristic features of the zinc oxide response to oxygen.
Thin Film Oxygen Partial Pressure Sensor
Author: J. J. Wortman
Publisher:
ISBN:
Category : Oxygen
Languages : en
Pages : 100
Book Description
The development is described of a laboratory model oxygen partial pressure sensor using a sputtered zinc oxide thin film. The film is operated at about 400 C through the use of a miniature silicon bar. Because of the unique resistance versus temperature relation of the silicon bar, control of the operational temperature is achieved by controlling the resistance. A circuit for accomplishing this is described. The response of sputtered zinc oxide films of various thicknesses to oxygen, nitrogen, argon, carbon dioxide, and water vapor caused a change in the film resistance. Over a large range, film conductance varied approximately as the square root of the oxygen partial pressure. The presence of water vapor in the gas stream caused a shift in the film conductance at a given oxygen partial pressure. A theoretical model is presented to explain the characteristic features of the zinc oxide response to oxygen.
Publisher:
ISBN:
Category : Oxygen
Languages : en
Pages : 100
Book Description
The development is described of a laboratory model oxygen partial pressure sensor using a sputtered zinc oxide thin film. The film is operated at about 400 C through the use of a miniature silicon bar. Because of the unique resistance versus temperature relation of the silicon bar, control of the operational temperature is achieved by controlling the resistance. A circuit for accomplishing this is described. The response of sputtered zinc oxide films of various thicknesses to oxygen, nitrogen, argon, carbon dioxide, and water vapor caused a change in the film resistance. Over a large range, film conductance varied approximately as the square root of the oxygen partial pressure. The presence of water vapor in the gas stream caused a shift in the film conductance at a given oxygen partial pressure. A theoretical model is presented to explain the characteristic features of the zinc oxide response to oxygen.
Scientific and Technical Aerospace Reports
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 1330
Book Description
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 1330
Book Description
Masters Theses and Doctoral Dissertations in the Pure and Applied Sciences Accepted by Colleges and Universities of the United States
Author:
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 536
Book Description
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 536
Book Description
Government Reports Announcements & Index
Author:
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 1056
Book Description
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 1056
Book Description
Bibliography of Scientific and Industrial Reports
Author:
Publisher:
ISBN:
Category : Research
Languages : en
Pages : 1424
Book Description
Publisher:
ISBN:
Category : Research
Languages : en
Pages : 1424
Book Description
Government Reports Index
Author:
Publisher:
ISBN:
Category : Engineering
Languages : en
Pages : 968
Book Description
Publisher:
ISBN:
Category : Engineering
Languages : en
Pages : 968
Book Description