The Application of Neutrosophic Hypersoft Set TOPSIS (NHSS-TOPSIS) in the Selection of Carbon Nano Tube based Field Effective Transistors CNTFETs PDF Download
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Author: Muhammad Umer Farooq
Publisher: Infinite Study
ISBN:
Category : Mathematics
Languages : en
Pages : 13
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Book Description
Carbon nano tubes (CNT) are the main parts of the electronic devices. Due to high carrier mobility, these devices have very high speed. CNT has a wide range of application in making sensors which can detect different types of diseases, materials, viruses and bacteria.
Author: Muhammad Umer Farooq
Publisher: Infinite Study
ISBN:
Category : Mathematics
Languages : en
Pages : 13
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Book Description
Carbon nano tubes (CNT) are the main parts of the electronic devices. Due to high carrier mobility, these devices have very high speed. CNT has a wide range of application in making sensors which can detect different types of diseases, materials, viruses and bacteria.
Author: Florentin Smarandache
Publisher: Infinite Study
ISBN:
Category : Mathematics
Languages : en
Pages : 311
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Book Description
“Neutrosophic Sets and Systems” has been created for publications on advanced studies in neutrosophy, neutrosophic set, neutrosophic logic, neutrosophic probability, neutrosophic statistics that started in 1995 and their applications in any field, such as the neutrosophic structures developed in algebra, geometry, topology, etc. In this issue: On Neutrosophic Crisp Sets and Neutrosophic Crisp Mathematical Morphology, New Results on Pythagorean Neutrosophic Open Sets in Pythagorean Neutrosophic Topological Spaces, Comparative Mathematical Model for Predicting of Financial Loans Default using Altman Z-Score and Neutrosophic AHP Methods.
Author: Florentin Smarandache
Publisher: Infinite Study
ISBN:
Category : Antiques & Collectibles
Languages : en
Pages : 652
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Book Description
Papers on neutrosophic statistics, neutrosophic probability, plithogenic set, paradoxism, neutrosophic set, NeutroAlgebra, etc. and their applications.
Author: Raj, Balwinder
Publisher: IGI Global
ISBN: 1799813959
Category : Technology & Engineering
Languages : en
Pages : 255
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Book Description
With recent advancements in electronics, specifically nanoscale devices, new technologies are being implemented to improve the properties of automated systems. However, conventional materials are failing due to limited mobility, high leakage currents, and power dissipation. To mitigate these challenges, alternative resources are required to advance electronics further into the nanoscale domain. Carbon nanotube field-effect transistors are a potential solution yet lack the information and research to be properly utilized. Major Applications of Carbon Nanotube Field-Effect Transistors (CNTFET) is a collection of innovative research on the methods and applications of converting semiconductor devices from micron technology to nanotechnology. The book provides readers with an updated status on existing CNTs, CNTFETs, and their applications and examines practical applications to minimize short channel effects and power dissipation in nanoscale devices and circuits. While highlighting topics including interconnects, digital circuits, and single-wall CNTs, this book is ideally designed for electrical engineers, electronics engineers, students, researchers, academicians, industry professionals, and practitioners working in nanoscience, nanotechnology, applied physics, and electrical and electronics engineering.
Author: Francois Leonard
Publisher: William Andrew
ISBN: 0815519680
Category : Technology & Engineering
Languages : en
Pages : 411
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Book Description
Possibly the most impactful material in the nanotechnology arena, carbon nanotubes have spurred a tremendous amount of scientific research and development. Their superior mechanical and chemical robustness makes them easily manipulable and allows for the assembly of various types of devices, including electronic, electromechanical, opto-electronic and sensing devices.In the field of nanotube devices, however, concepts that describe the properties of conventional devices do not apply. Carbon nanotube devices behave much differently from those using traditional materials, and offer entirely new functionality. This book – designed for researchers, engineers and graduate students alike – bridges the experimental and theoretical aspects of carbon nanotube devices. It emphasizes and explains the underlying physics that govern their working principles, including applications in electronics, nanoelectromechanical systems, field emission, optoelectronics and sensing. Other topics include: electrical contacts, p-n junctions, transistors, ballistic transport, field emission, oscillators, rotational actuators, electron-phonon scattering, photoconductivity, and light emission. Many of the aspects discussed here differ significantly from those learned in books or traditional materials, and are essential for the future development of carbon nanotube technology.• Bridges experimental and theoretical aspects of carbon nanotube devices, focusing on the underlying physics that govern their working principles • Explains applications in electronics, nanoelectromechanical systems, field emission, optoelectronics and sensing. • Other topics include: electrical contacts, p-n junctions, transistors, ballistic transport, field emission, oscillators, rotational actuators, electron-phonon scattering, photoconductivity, and light emission. • Covers aspects that significantly differ from those learned in traditional materials, yet are essential for future advancement of carbon nanotube technology.* Bridges experimental and theoretical aspects of carbon nanotube devices, focusing on the underlying physics that govern their working principles * Explains applications in electronics, nanoelectromechanical systems, field emission, optoelectronics and sensing.* Other topics include: electrical contacts, p-n junctions, transistors, ballistic transport, field emission, oscillators, rotational actuators, electron-phonon scattering, photoconductivity, and light emission* Covers aspects that significantly differ from those learned in traditional materials, yet are essential for future advancement of carbon nanotube technology.
Author: J.-P. Colinge
Publisher: Springer Science & Business Media
ISBN: 0306476223
Category : Technology & Engineering
Languages : en
Pages : 442
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Book Description
Physics of Semiconductor Devices covers both basic classic topics such as energy band theory and the gradual-channel model of the MOSFET as well as advanced concepts and devices such as MOSFET short-channel effects, low-dimensional devices and single-electron transistors. Concepts are introduced to the reader in a simple way, often using comparisons to everyday-life experiences such as simple fluid mechanics. They are then explained in depth and mathematical developments are fully described. Physics of Semiconductor Devices contains a list of problems that can be used as homework assignments or can be solved in class to exemplify the theory. Many of these problems make use of Matlab and are aimed at illustrating theoretical concepts in a graphical manner.
Author: Ashok Srivastava
Publisher: Pan Stanford
ISBN: 9789814613101
Category : Science
Languages : en
Pages : 0
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Book Description
Discovery of one-dimensional material carbon nanotubes in 1991 by the Japanese physicist Dr. Sumio Iijima has resulted in voluminous research in the field of carbon nanotubes for numerous applications, including possible replacement of silicon used in the fabrication of CMOS chips. One interesting feature of carbon nanotubes is that these can be metallic or semiconducting with a bandgap depending on their diameter. In search of non-classical devices and related technologies, both carbon nanotube-based field-effect transistors and metallic carbon nanotube interconnects are being explored extensively for emerging logic devices and very large-scale integration. Although various models for carbon nanotube-based transistors and interconnects have been proposed in the literature, an integrated approach to make them compatible with the present simulators is yet to be achieved. This book makes an attempt in this direction for the carbon-based electronics through fundamentals of solid-state physics and devices.
Author: Muhammad Saqlain
Publisher: Infinite Study
ISBN:
Category : Mathematics
Languages : en
Pages : 13
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Book Description
This paper includes basics operator’s like union, intersection, complement, subset, null set, equal set etc., of Neutrosophic Hypersoft set (NHSS). The validity and the implementation are presented along with suitable examples. For more precision and accuracy, in future, proposed operations will play a vital role is decision-makings like personal selection, management problems and many others.
Author: Mark Lundstrom
Publisher: World Scientific Publishing Company
ISBN: 9789814571739
Category : Metal oxide semiconductor field-effect transistors
Languages : en
Pages : 0
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Book Description
Overview -- The transistor as a black box -- The MOSFET: a barrier-controlled device -- MOSFET IV: traditional approach -- MOSFET IV: the virtual source model -- Poisson equation and the depletion approximation -- Gate voltage and surface potential -- Mobile charge: bulk MOS -- Mobile charge: extremely thin SOI -- 2D MOS electrostatics -- The VS model revisited -- The Landauer approach to transport -- The ballistic MOSFET -- The ballistic injection velocity -- Connecting the ballistic and VS models -- Carrier scattering and transmission -- Transmission theory of the MOSFET -- Connecting the transmission and VS models -- VS characterization of transport in nanotransistors -- Limits and limitations
Author: Niladri Pratap Maity
Publisher: CRC Press
ISBN: 1000527441
Category : Science
Languages : en
Pages : 248
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Book Description
This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components. This book presents a broad review of SiO2 materials, including a brief historical note of Moore’s law, followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the various deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book. The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working structure and modeling. This timely volume will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology.
